SUPER247TM Search Results

Contextual Info: IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 220 Qgs (nC) 64 Qgd (nC) 110 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

IRFPS35N50L

Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Contextual Info: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration

7905 L

Abstract: Super247TM IRFPS37N50A SiHFPS37N50A SiHFPS37N50A-E3 IRFPS37N50APBF
Contextual Info: IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

irf510 switch

Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
Contextual Info: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.

IRFPS40N50L

Abstract: SiHFPS40N50L
Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 • Lower Gate Charge Results in Simpler Drive

IRFPS40N60K

Abstract: SiHFPS40N60K SiHFPS40N60K-E3 IRFPS40N60KPBF
Contextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 330

J 6920 A

Abstract: J 6920 mJ 6920 91256 IRFPS30N60K SiHFPS30N60K SiHFPS30N60K-E3
Contextual Info: IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 220 Qgs (nC) 64 Qgd (nC) 110 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 220 Qgs (nC) 64 Qgd (nC) 110 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.110 Qg (Max.) (nC) 330 Qgs (nC) 84 Qgd (nC) 150 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*

Contextual Info: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration

SiHFPS29N60L

Abstract: ISD 1820 P dt-830 IRFPS29N60L SiHFPS29N60L-E3
Contextual Info: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration

IRFPS43N50K

Abstract: SiHFPS43N50K
Contextual Info: IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

IRFPS40N60K

Contextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.110 Qg (Max.) (nC) 330 Qgs (nC) 84 Qgd (nC) 150 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*

full bridge mosfet smps

Abstract: Full-bridge series resonant converter Full bridge SMPS ZVT full bridge ZVT full bridge for welding make full-bridge SMPS smps* ZVT ZVS DRIVER PCIM 95 IRFP450A
Contextual Info: MOSFET Failure Modes in the Zero-Voltage-Switched Full-Bridge Switching Mode Power Supply Applications Alexander Fiel and Thomas Wu International Rectifier Applications Department El Segundo, CA 90245, USA Abstract-As the demand for the telecom/server power is

7905 regulator

Abstract: IRFPS37N50A SiHFPS37N50A SiHFPS37N50A-E3
Contextual Info: IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

d 78040

Abstract: BS138 MAX03H 78105 2001 aavid 82940 78015 78015 to220 semiconductors cross index MAX01-H
Contextual Info: Table of Contents How to Use this Catalog . 2 How to Order The Max Clip SystemTM . 3

Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 • Lower Gate Charge Results in Simpler Drive

17AB

Contextual Info: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration