SUPER MATCHED BIPOLAR TRANSISTOR PAIR Search Results

MAT03

Abstract: DAC08 MAT03E MAT03EH MAT03F MAT03FH OP27 MAT03-SPECIFICATIONS Microphone Pre-Amplifier
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V Max Low Noise: 1 nV/√Hz @ 1 kHz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: r BE Ӎ 0.3 ⍀ typ GENERAL DESCRIPTION

National "Audio Handbook"

Abstract: PF5102 Lm194 high accuracy riaa riaa preamp analog devices balanced riaa AN-222 lm114 operational amplifier discrete schematic phono preamp
Contextual Info: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing

National "Audio Handbook"

Abstract: PF5102 2N4250 strain gauge amplifier National LM194 LM394 AN-222 LM118 Cold-Junction
Contextual Info: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing

MAT03 op

Abstract: PMD CAPACITOR MAT03 MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

C3129

Abstract: MAT03EH MAT03 MAT03A MAT03AH2 MAT03E MAT03F MAT03FH transistor low noise preamp microphone SILICON SMALL-SIGNAL DICE
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

current mirrors wilson

Abstract: microphone preamplifier super match pair SILICON SMALL-SIGNAL DICE cascode preamplifier cascode miller capacitance MAT03AH2 model dac08
Contextual Info: BACK a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

MAT03 op

Abstract: cascode miller capacitance low noise Microphone Preamplifier
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

PF5102 equivalent

Abstract: National "Audio Handbook" LM194 lm114 National AN-222 C1995 LM114/PF5102 equivalent LM118 PF5102
Contextual Info: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool yet have received less and less attention over the last few years This is primarily due to the proliferation of highperformance monolithic circuits which are replacing many

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

pmi dac08

Abstract: DAC08
Contextual Info: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor

lm394

Abstract: LM194 LM394H LM394CH supermatch pair Vishay Ultronix Grand Junction CO Q81 LM194 NPN Monolithic Transistor Pair Super matched pair smd transistor marking TL LM394 Spice
Contextual Info: LM194 LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear processing and a unique new device structure

LM194 NPN Monolithic Transistor Pair

Abstract: LM394CH LM194 accurate logging amplifier TRANSISTOR REPLACEMENT GUIDE supermatch pair LM194H
Contextual Info: LM194 LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear processing and a unique new device structure

LB-52

Abstract: "Matched Bipolar Transistor Pair" AN-222 semiconductor LINEAR AN222 Nelson Carl T
Contextual Info: National Semiconductor Linear Brief 52 Robert A. Pease December 1980 It is well known that the voltage noise of an operational amplifier can be decreased by increasing the emitter current of the input stage. The signal-to-noise ratio will be improved by the increase of bias, until the base current noise begins to

DARLINGTON phototransistor 14

Abstract: phototransistor 3 pin LED phototransistor IC PACKAGE VISIBLE LIGHT PHOTOdarlington TRANSISTOR IR LED infrared led OPTICAL INTERRUPTER reflective object sensors
Contextual Info: EO OPTOELECTRONICS TABLE OF CONTENTS Description VISIBLE PRODUCTS How To Use This Catalog Part Num ber Index OPTOCOUPLERS How To Use The V isible Products Section 55 V isib le Products Specification Definitions 56 3 mm T-1 and T-100 LED Lam ps 57 How To Use The O ptocoupler Section

LM709 equivalent

Abstract: Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709
Contextual Info: National Semiconductor Application Note 29 Robert J. Widlar September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. mance is often limited by leakages in capacitors, diodes, analog switches or printed circuit boards, rather than by the

1000X

Abstract: AN-222 C1995 LB-52
Contextual Info: National Semiconductor Linear Brief 52 Robert A Pease December 1980 It is well known that the voltage noise of an operational amplifier can be decreased by increasing the emitter current of the input stage The signal-to-noise ratio will be improved by the increase of bias until the base current noise begins

dcp51

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd zener diode color code TRANSISTOR SMD MARKING CODE s2a diode 1n4007 melf smd BAS40-4 smd diode sod-323 marking code L2 SMD SOT23 transistor MARK Y2 smd zener diode code 72 in sot-323 smd glass zener diode color codes
Contextual Info: Switching Diodes DC/DC Switching Zener Diodes Regulators / Controllers Transient Voltage Linear Regulators Suppressors TVSs Shunt Voltage Thyristor Surge References DIODES INCORPORATED Protection Devices Voltage Sup (TSPDs) Op Amp / Data Line Protection

ir 4427 cross reference

Abstract: DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T
Contextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability

transistor C 4429 equivalent

Abstract: DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors
Contextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability

Contextual Info: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

DAC-08

Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

80500 TRANSISTOR

Abstract: LM113-1H
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLM113-1-X REV 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode. It features

power BJT DARLINGTON PAIR NPN

Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
Contextual Info: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V