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SUP40 Datasheets (15)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SUP40010EL-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220AB	Original	PDF	146.59KB
SUP40012EL-GE3	Vishay Siliconix	MOSFET N-CH 40V 150A TO220AB	Original	PDF	158.26KB
SUP40N06-25L	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SUP40N06-25L	Vishay	Transistor Mosfet N-CH 60V 40A 3TO-220AB	Original	PDF	100.17KB	5
SUP40N06-25L	Vishay Intertechnology	N-Channel 60-V (D-S), 175Â°C MOSFET, Logic Level	Original	PDF	78.26KB	4
SUP40N06-25L-E3	Vishay	Transistor Mosfet N-CH 60V 40A 3TO-220AB	Original	PDF	100.17KB	5
SUP40N10-30	Vishay Siliconix	MOSFETs	Original	PDF	69.05KB	5
SUP40N10-30-E3	Vishay	Transistor Mosfet N-CH 100V 40A 3TO-220AB	Original	PDF	91.89KB	6
SUP40N10-30-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 38.5A TO220AB	Original	PDF		6
SUP40N10-30 SPICE Device Model	Vishay	N-Channel 100-V (D-S) 175Â°C MOSFET	Original	PDF	177.13KB	3
SUP40N10-35	Vishay Siliconix	MOSFETs	Original	PDF	66.23KB	5
SUP40N10-35-E3	Vishay	Transistor Mosfet N-CH 105V 37.5A 3TO-220AB	Original	PDF	95.54KB	6
SUP40N25-60-E3	Vishay	Transistor Mosfet N-CH 250V 40A 3TO-220AB	Original	PDF	88.45KB	6
SUP40N25-60-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 40A TO220AB	Original	PDF		7

SUP40P10-43-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 36A TO220AB	Original	PDF		7

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Vishay Intertechnologies SUP40012EL-GE3 Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SUP40012EL-GE3		1,000		7	1 - 10 $1.38 100 $1.26 1000 $1.02 10000 $1.02	Buy Now
Avnet Americas	SUP40012EL-GE3	Tape & Reel		52 Weeks	500	1 - 10 - 100 - 1000 $1.03 10000 $0.99	Buy Now
Arrow Electronics	SUP40012EL-GE3		1,000	52 Weeks	1	1 $2.06 10 $1.38 100 $1.26 1000 $1.02 10000 $1.02	Buy Now
Newark	SUP40012EL-GE3	Bulk			1	1 $3.31 10 $1.66 100 $1.50 1000 $1.11 10000 $1.07	Buy Now
TTI	SUP40012EL-GE3	Tube			500	1 - 10 - 100 - 1000 $1.02 10000 $1.02	Buy Now

TME	SUP40012EL-GE3				1	1 $3.08 10 $1.97 100 $1.50 1000 $1.50 10000 $1.50	Get Quote
EBV Elektronik	SUP40012EL-GE3			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
ams OSRAM Group GW KAGMB6.EM-TSUP-40S3-72 SOLERIQ S 15 - Trays (Alt: Q65112A9728)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GW KAGMB6.EM-TSUP-40S3-72	Tray		8 Weeks	1,000	1 - 10 - 100 - 1000 $4.01 10000 $3.60	Buy Now
Vishay Intertechnologies SUP40010EL-GE3 - Tape and Reel (Alt: SUP40010EL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP40010EL-GE3	Tape & Reel		52 Weeks	500	1 - 10 - 100 - 1000 $1.44 10000 $1.33	Buy Now
Newark	SUP40010EL-GE3	Bulk	870		1	1 $4.32 10 $2.82 100 $2.11 1000 $1.76 10000 $1.76	Buy Now
TTI	SUP40010EL-GE3	Tube			500	1 - 10 - 100 - 1000 $1.76 10000 $1.76	Buy Now
TME	SUP40010EL-GE3				1	1 $3.93 10 $2.59 100 $2.32 1000 $2.32 10000 $2.32	Get Quote
EBV Elektronik	SUP40010EL-GE3			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SUP40N25-60-E3 - Rail/Tube (Alt: SUP40N25-60-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP40N25-60-E3	Tube		52 Weeks	500	1 - 10 - 100 - 1000 $2.54 10000 $2.49	Buy Now
Newark	SUP40N25-60-E3	Bulk			500	1 - 10 - 100 - 1000 $2.63 10000 $2.27	Buy Now
TTI	SUP40N25-60-E3	Tube			500	1 - 10 - 100 - 1000 $2.66 10000 $2.66	Buy Now
EBV Elektronik	SUP40N25-60-E3			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SUP40N25-60-E3 MOSFET, POWER, N-CH, VDSS 250V, RDS(ON) 0.049OHM, ID 40A, TO-220AB, PD 300W, VGS +/-30V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SUP40N25-60-E3	Bulk			500	1 - 10 - 100 - 1000 $6.26 10000 $5.76	Get Quote

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SUP40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6189B Abstract: CB4075 Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	sup40n10-30-ge3 2002/95/ec o-220ab 2011/65/eu +312-mar-12 6189b cb4075	PDF
SUP40P10-43 Abstract: 4600 mosfet inverter SUP40P10-43-GE3 Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100	Original	sup40p10-43 2002/95/ec o-220ab sup40p10-43-ge3 +218-jul-08 4600 mosfet inverter	PDF
SUP40N10-30 Abstract: pd107 Contextual Info: SUP40N10-30 Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V 37.5 FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive	Original	sup40n10-30 o-220ab 08-apr-05 pd107	PDF
Contextual Info: SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT	Original	sup40n10-30 o-220ab sup40n10-30-e3 18-jul-08	PDF
C 5478 Abstract: AN609 SUP40N25-60 Contextual Info: SUP40N25-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sup40n25-60 an609 19-dec-07 c 5478	PDF
Contextual Info: SPICE Device Model SUP40N25-60 www.vishay.com Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	sup40n25-60 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
SUP40N10-30 Contextual Info: SPICE Device Model SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sup40n10-30 s-71510rev 23-jul-07	PDF
SUP40N25-60 Contextual Info: SUP40N25-60 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 40 0.064 @ VGS = 6 V	Original	sup40n25-60 o-220ab sup40n25-60--e3	PDF
Contextual Info: SUP40N25-60 Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package	Original	sup40n25-60 2002/95/ec o-220ab sup40n25-60-e3 +22011/65/eu 12-mar-12	PDF
Contextual Info: SUP40N25-60 Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package	Original	sup40n25-60 2002/95/ec o-220ab sup40n25-60-e3 +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	sup40n10-30-ge3 2002/95/ec o-220ab 2011/65/eu +2js709a 02-oct-12	PDF
C 4977 Abstract: ON 4977 SUP40N25-60 Contextual Info: SPICE Device Model SUP40N25-60 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sup40n25-60 s-71512rev 23-jul-07 c 4977 +1on 4977	PDF
Contextual Info: SUP40N25-60 Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package	Original	sup40n25-60 2002/95/ec o-220ab sup40n25-60-e3 +32011/65/eu js709a 02-oct-12	PDF
SUP40P10-43 Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100	Original	sup40p10-43 2002/95/ec o-220ab sup40p10-43-ge3 +22011/65/eu 12-mar-12	PDF

Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	sup40n10-30-ge3 2002/95/ec o-220ab 11-mar-11	PDF
Contextual Info: SUP40N10-35 Vishay Siliconix N-Channel 105-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) 0.035 at VGS = 10 V 37.5 0.038 at VGS = 6 V 36.0 RoHS COMPLIANT TO-220AB	Original	sup40n10-35 o-220ab sup40n10-35-e3 08-apr-05	PDF
pd107 Abstract: SUP40N10-35 Contextual Info: SUP40N10-35 Vishay Siliconix New Product N-Channel 105-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 37.5 0.038 @ VGS = 6 V 36.0 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive	Original	sup40n10-35 o-220ab sup40n10-35--e3 08-apr-05 +1pd107	PDF
S4044 Abstract: SUP40N10-35 s40445 Contextual Info: SUP40N10-35 Vishay Siliconix New Product N-Channel 105-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 37.5 0.038 @ VGS = 6 V 36.0 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive	Original	sup40n10-35 o-220ab sup40n10-35--e3 s-40445--rev +315-mar-04 s4044 s40445	PDF
SUP40N10-30 Contextual Info: SPICE Device Model SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sup40n10-30 0-to-10v 26-apr-03	PDF
BR 103 Contextual Info: SUP40N25-60 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 40 0.064 @ VGS = 6 V	Original	sup40n25-60 o-220ab sup40n25-60--e3 s-42076--rev +215-nov-04 br 103	PDF
SUP40N10-30-GE3 Contextual Info: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	sup40n10-30-ge3 2002/95/ec o-220ab 18-jul-08	PDF
Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100	Original	sup40p10-43 2002/95/ec o-220ab sup40p10-43-ge3 +22011/65/eu 12-mar-12	PDF
Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100	Original	sup40p10-43 2002/95/ec o-220ab sup40p10-43-ge3 +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100	Original	sup40p10-43 2002/95/ec o-220ab sup40p10-43-ge3 +32011/65/eu js709a 02-oct-12	PDF

SUP40 Search Results

SUP40 Datasheets (15)

SUP40 Price and Stock

Vishay Intertechnologies SUP40012EL-GE3

ams OSRAM Group GW KAGMB6.EM-TSUP-40S3-72

Vishay Intertechnologies SUP40010EL-GE3

Vishay Intertechnologies SUP40N25-60-E3

Vishay Siliconix SUP40N25-60-E3

SUP40 Datasheets Context Search

6189B

SUP40P10-43

SUP40N10-30

C 5478

SUP40N10-30

SUP40N25-60

C 4977

SUP40P10-43

pd107

S4044

SUP40N10-30

BR 103

SUP40N10-30-GE3