SUP36N20 Search Results

74350

Abstract: 15-V SUP36N20-54P SUP36N20
Contextual Info: SPICE Device Model SUP36N20-54P Vishay Siliconix N-Channel 200-V D-S 150°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUP36N20-54P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ) 57 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested

8973

Abstract: Datasheet 4449 AN609 SUP36N20-54P
Contextual Info: SUP36N20-54P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74293

Abstract: SUP36N20-54P SUP36N20-54P-E3
Contextual Info: SUP36N20-54P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ) 57 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested

74293

Abstract: SUP36N20 SUP36N20-54P SUP36N20-54P-E3
Contextual Info: SUP36N20-54P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ) 57 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no