SUM90N06 Search Results

SUM90N06 Datasheets (2)

Filter by Manufacturer

Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SUM90N06-4M4P-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK	Original	PDF		8
SUM90N06-5M5P-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK	Original	PDF		8

SUM90N06 Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Intertechnologies SUM90N06-5M5P-E3 - Tape and Reel (Alt: SUM90N06-5M5P-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUM90N06-5M5P-E3	Tape & Reel			800	1 - 10 - 100 - 1000 $2.16 10000 $2.02	Buy Now
Vishay Siliconix SUM90N06-4M4P-E3 SUM90N06-4M4P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 60 V, 2+TAB-PIN TO-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SUM90N06-4M4P-E3	Bulk			1	1 $2.33 10 $2.21 100 $2.06 1000 $1.96 10000 $1.96	Get Quote

SUM90N06 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-5m5p o-263 sum90n06-5m5p-e3 08-apr-05	PDF
Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-5m5p o-263 sum90n06-5m5p-e3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SUM90N06-4M4P Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-4m4p o-263 sum90n06-4m4p-e3 18-jul-08	PDF
Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-5m5p o-263 sum90n06-5m5p-e3 11-mar-11	PDF
121-398 Abstract: 4828 datasheet 4828 7483 transistor c 6073 AN609 Contextual Info: SUM90N06-4m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sum90n06-4m4p an609 21-jun-07 121-398 +44828 datasheet 4828 7483 transistor c 6073	PDF
7447 Abstract: 8807 datasheet 7447 AN609 Contextual Info: SUM90N06-5m5P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sum90n06-5m5p an609 18-sep-07 7447 +28807 datasheet 7447	PDF
Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-5m5p o-263 sum90n06-5m5p-e3 18-jul-08	PDF
Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) RDS(on) () ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • 175 °C Junction Temperatur RoHS • 100 % Rg and UIS Tested COMPLIANT	Original	sum90n06-4m4p o-263 sum90n06-4m4p-e3 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SUM90N06 Contextual Info: SPICE Device Model SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sum90n06-5m5p 18-jul-08 sum90n06	PDF
SUM90N06-4m4P Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-4m4p o-263 sum90n06-4m4p-e3 08-apr-05	PDF
90D 22 Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-4m4p o-263 sum90n06-4m4p-e3 18-jul-08 +190d 22	PDF
SUM90N06-4m4P Contextual Info: SPICE Device Model SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	sum90n06-4m4p 18-jul-08	PDF
Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	sum90n06-5m5p o-263 sum90n06-5m5p-e3 2011/65/eu +22002/95/ec 12-mar-12	PDF
PowerPAK 1212-8 Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of	Original	sc-70 o-220 o-236 sir640dp +11si4038dy sis488dn sir662dp sup90n06-02p sum90n06-02p si4062dy powerpak 1212-8 sir640 sia442dj so8l powerpak so-8	PDF

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF