SUM Search Results

DN-36

Abstract: MA 5036 NS
Contextual Info: | i j i _ DN-36 U IM IT R O D E Design Note UC1525B/UC1527B DEVICES Comparison Summary to UC1525A/27A Devices The UC1525B and UC1527B devices are enhanced versions of the previous generation of UC1525A and UC1527A devices. They are pin-for-pin compatible and direct replacements for the “A”

1414f

Abstract: QFP144-P-2626B QFP44-P-1414F RTC Real Time Clocks TC8521AM TC8512BY MC68B45
Contextual Info: Microcomputer Peripheral Controller LSI RTC Real Time Clocks Group Name Parts Name Function Summary Package TC8521AP DIP18-P-300A TC8521AM SOP20-P-300 RTC-2A Real Time Clock for Micro Computer. Hour, minutes, second, month, day, day of the week and year count with leap year operation. 4-bit I/O CPU Direct.

Contextual Info: 7. COMMON EL ECT RI CA L CHA RA C TE RI ST IC S 7 -1 P o w sr D issip ation The power dissipation of CMOS device is composed of two components: one static, the other dynamic. The total power dissipation is the sum of static and dynamic power dissipation. Static power dissipation is obtained by multiplying quiescent supply current by the supply voltage range

DN27

Contextual Info: DN-27 UNITRODE Design Note UC1842/UC1842A FAMILY SUMMARY OF FUNCTIONAL DIFFERENCES The industry standard series of UC1842/43/44/45 devices has been improved for higher frequency, off-line power supplies. This new "A" series of controllers, UC1842A/43A/44A/45A, feature three major advantages

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

A07 mosfet

Abstract: Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N
Contextual Info: TSM4544D 30V Dual N & P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 5. Drain 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V 1 1 2 2 N-Channel 30 P-Channel -30 Features RDS(on)(mΩ) ID (A) 30 @ VGS = 10V 7 44 @ VGS = 4.5V

TRANSISTOR 0835

Contextual Info: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo

POWER MOSFET 4600

Abstract: 1A 700V MOSFET
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM2NB60

Abstract: mosfet 600V 2A
Contextual Info: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 12 @ VGS =10V 7.8 17 @ VGS =4.5V 7 Block Diagram

fr 3910

Contextual Info: TSM190N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 75 4.2 @ VGS =10V 190 Block Diagram Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.)

TSM3458

Abstract: sot26 pa N-Channel mosfet sot-26
Contextual Info: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●

NPN Transistor 1A 800V to - 92

Abstract: transistor -25 F07
Contextual Info: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type

mosfet 0835

Abstract: TSM05N03
Contextual Info: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

mosfet to92

Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

npn 600v to92

Abstract: NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma TSC966cw A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92
Contextual Info: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ●

TSM40N03P

Contextual Info: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram

tsc13003

Abstract: TSC13003H NPN Transistor 1A 800V to - 92 transistor 800V 1A TSC1300 NPN Transistor 1A 400V to - 92 TSC13 1.5A NPN power transistor TO-92
Contextual Info: TSC13003H Preliminary High Voltage NPN Transistor TO-92 TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology

Contextual Info: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

RF transistor marking IN SOT-89

Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150