SUD19P06 Search Results

SUD19P06-60-E3

Abstract: SUD19P06-60
Contextual Info: New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT

9327

Abstract: transistor M 9741 AN609 SUD19P06-60
Contextual Info: SUD19P06-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUD19P06-60L

Contextual Info: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SUD19P06-60 www.vishay.com Vishay Siliconix P-Channel 60 V D-S 150 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SUD19P06-60

Contextual Info: SPICE Device Model SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S 150°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

p-channel mosfet

Abstract: SUD19P06-60L
Contextual Info: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

4376051

Abstract: 7443 AN609 SUD19P06-60L
Contextual Info: SUD19P06-60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUD19P06-60L

Abstract: SUD19P06-60L-E3 SUD19P
Contextual Info: New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 Qg (Typ) • TrenchFET Power MOSFET • 175 °C Junction Temperature

Contextual Info: SUD19P06-60 Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d RDS(on) () 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SUD19P06-60

Contextual Info: New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT

Contextual Info: SUD19P06-60L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.060 @ VGS = −10 V −19 0.077 @ VGS = −4.5 V −16.8 D TrenchFETr Power MOSFET D 175_C Junction Temperature Qg (Typ)

SUD19P06-60L

Abstract: SUD19P
Contextual Info: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD19P06-60L

Abstract: SUD19P06-60L-E3
Contextual Info: New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 Qg (Typ) • TrenchFET Power MOSFET • 175 °C Junction Temperature

SUD19P06-60L

Abstract: SUD19P06 41821
Contextual Info: SUD19P06-60L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.060 @ VGS = −10 V −19 0.077 @ VGS = −4.5 V −16.8 D TrenchFETr Power MOSFET D 175_C Junction Temperature Qg (Typ)

LTC4000-1

Abstract: comparator battery solar charger pmos N02N1002J LTC4001-1 wind turbine mppt Charge Controller design and ic Solar Charge Controller mppt ic LTC4000 Solar Charge Controller driver circuits solar cell LiFePO4 charger ic for Solar Power MPPT Controller
Contextual Info: LTC4000-1 High Voltage High Current Controller for Battery Charging with Maximum Power Point Control Description Features Maximum Power Control: Solar Panel Input Compatible n Complete High Performance Battery Charger When Paired with a DC/DC Converter n Wide Input and Output Voltage Range: 3V to 60V

"Zener Diode 0805"

Abstract: LM3423 SUD40N10-25 TP10 zener diode 0805 MMBT3904LT1G high voltage resistor
Contextual Info: National Semiconductor Application Note 1872 Matthew Reynolds December 8, 2008 Introduction Standard Evaluation Board Operating Configuration • fSW = 600 kHz • Over-voltage protection set at 42V • VIN range 4.5V to 35V • Low side PWM fast dimming • 2 to 8 series connected LEDs VO < 35V

piezo injector

Abstract: Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512
Contextual Info: Diesel ECU and Fuel Injector Drivers Table of Contents CAN-BUS, ESD Protection. 3 CAN-BUS, ISO9141 Bus Transceiver. 4

RC1206JR-072RL

Abstract: digital p channel mosfet sot-23 fairchild LM3423MH LM3423 SUD40N10-25 TP10 22-28-4023 Initio ERJL12KF10CU 174-K
Contextual Info: National Semiconductor Application Note 1872 Matthew Reynolds September 5, 2008 Introduction Standard Evaluation Board Operating Configuration • fSW = 600 kHz • Over-voltage protection set at 42V • VIN range 4.5V to 35V • Low side PWM fast dimming

LTC4000GN

Abstract: N02N1002J si7135 Si7135DP LTC4000 battery charger 48v 10A LT3845A LTC4000EGN L6568 SiR4840BDY
Contextual Info: LTC4000 High Voltage High Current Controller for Battery Charging and Power Management Description Features Complete High Performance Battery Charger When Paired with a DC/DC Converter n Wide Input and Output Voltage Range: 3V to 60V n Input Ideal Diode for Low Loss Reverse Blocking

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Vm-10V

Abstract: TMCM-1110 STEPROCKER
Contextual Info: POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC262 DATASHEET Universal, cost-effective stepper driver for two-phase bipolar motors with state-of-the-art features. External MOSFETs fit different motor sizes. With Step/Dir Interface and SPI. APPLICATIONS