SUBMOUNT Search Results

diode t25 4 A0

Contextual Info: SIEMENS SFH4446 TRANSCEIVER OPTICAL MODULE FEATURES Maximum Ratings * Bidirectional Module with Integrated WDM * Emission Wavelenght: 1300 nm * Suitable for Bit Rates up to S65 Mbit/s Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical with the case temperature.

SFH4423

Contextual Info: SIEMENS SFH 4423/4424 LOW POWER LASERDIODE SM FIBER PIGTAIL FEATURES • InGaAsP/lnP MCRW Laserdiode • 10/125 nm Single Mode Pigtail M axim um R ating s Output power ratings refer to the fiber output. The operating temperature of the submount is identical with the case

LED LASER

Abstract: ausn submount
Contextual Info: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 807 nm JOLD-x-CAFN-xA Design 2104xxx26 210480326 3 submounts 210480426 (4 submounts)

JET-635-05

Contextual Info: JET-635-05 Description JET-635-05 is a single chip RED LED emitter, utilizing a single high power chip die with a clear epoxy lens offering ultra low divergence beam of perfectly square proportions. It features a full metal submount with M12x1 thread for convenient installation and ideal heat dissipation

Contextual Info: rev.2.0 07.05.15 DUV-OC39 • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO39 open submount Beam angle 144 deg. Description DUV-OC39 is a series of AlGaN based single emitter DEEP-UV LEDs in an open TO39 metal can package, with a beam angle of

CST-15

Abstract: CST15-915 SPT-110
Contextual Info: Product Summary Pump Semiconductor Laser Chip on Submount CST15-915 CST15-975 The Chip on Submount COS Features Semiconductor Lasers are a compact, ▲ Economical and easily integrated ▲ Collimated fast axis output ▲ High brightness source amplifiers. The COS product consists

JET-735-10

Contextual Info: JET-735-10 Description JET-735-10 is a single chip IR LED emitter, utilizing a single high power chip die with a clear epoxy lens offering ultra low divergence beam of perfectly square proportions. It features a full metal submount with M12x1 thread for convenient installation and ideal heat dissipation

JET-685-05

Contextual Info: JET-685-05 Description JET-685-05 is a single chip LED emitter, utilizing a single high power chip die with a clear epoxy lens offering ultra low divergence beam of perfectly square proportions. It features a full metal submount with M12x1 thread for convenient installation and ideal heat dissipation

Contextual Info: Cree EZ1000 Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction eficiency and enables a Lambertian radiation pattern.

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 808 nm JOLD-x-CABN-xA Design 210436x26 210436126 4 submounts 210436226 (6 submounts)

LEMO

Abstract: SOA1300MRI/P Peltier element CH-6805 lemo connector
Contextual Info: SOA 1300MRI Optical Amplifier Module 1.30 µm λ-Window REV 09/01 Features Specifications @ T submount = 20°C High gain Model Unit Low polarization dependence Low ripple High output saturation power 1.30 µm wavelength window mA 250 °C 10 35 Maximum Gain (G

EZ1000

Abstract: 460nm ez130 C460EZ1000-S30000 EZ1000 LED
Contextual Info: Cree EZ1000 LEDs Data Sheet CxxxEZ1000-Sxx000 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.

6805

Abstract: M 1535 CH-6805 DSA0013226
Contextual Info: SOA 1550CRI Optical Amplifier Chip 1.55µm λ-Window REV 09/01 Specifications @ T Submount = 20°C Features High gain Low polarization dependence Low ripple High output saturation power Model Unit Supply current Maximum Gain (G ma x ) Gain ripple @ G = 20 dB

Oclaro

Contextual Info: 8W 808nm 190 m High Power Single Emitter Laser Diode on Submount SES8-808A/B-01 Features: • 3.6mm x 0.4mm laser diode • 190μm wide emitter • 8W operating power p-side down mounted • Highly reliable single quantum well MBE structure • RoHS compliant

Contextual Info: 9W 9xxnm 90 m High Power Single Emitter Laser Diode on Submount SES9-9xx-01 Features: • 3.6mm x 0.4mm laser diode • 90μm wide emitter • 9W operating power p-side down mounted • Highly reliable single quantum well MBE structure • Standard wavelength at 915, 940, 960

Contextual Info: Preliminary Data sheet 5W 9xx nm High Power Single Emitter Laser Diode on Submount Features SES5-9xx-01 • Available in the wavelength range 780-1060nm The Bookham Technology SES5-9xx-01 single emitter laser diode series have been designed to provide the

808nm 1W laser diode

Abstract: 808nm 1W 808nm W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw
Contextual Info: 200mW Multi-Mode 808nm VCSEL Diode Part # PCW-CS-200-W0808 • • • • • Vertical-Cavity Surface-Emitting Laser technology >200mW CW multi-mode power at 808nm Circular, low-diverging beam Custom wavelengths available 808-1064nm Custom packaging available (submount, Cmount, TO can)

DiCap

Abstract: D30XXKITA5PX BH film CAPACITORS
Contextual Info: DICAP High Performance single layer ceramic capacitors for RF and Microwave / Millimeter Wave applications FUNCTIONAL APPLICATIONS: BENEFITS: DC Blocking, RF Bypass, Filtering, Tuning and Submounts. Gold metallization for wire bonding Rugged construction

Contextual Info: BORDER CAP Single Layer Capacitors with recessed metallization. Available with borders on both sides. FUNCTIONAL APPLICATIONS: DC Blocking, RF Bypass, Filtering, Tuning and Submounts. BENEFITS: Recessed metallization minimizes the potential for shorting during die attach.

laser diode submount

Abstract: C975 C915 2 Wavelength Laser Diode submount bookham diode
Contextual Info: 6W 9xx nm High Power Single Emitter Laser Diode on Submount SES6-9xx-01 The Bookham SES6-9xx-01 single emitter laser diode series has been designed to provide the high output power, high coupling efficiency and high reliability required for fiber laser pumping and other high power

SES9-975-01

Abstract: laser diode submount SES9-940-01 laser 940nm
Contextual Info: Data Sheet 9W 940nm High Power Single Emitter Laser Diode on Submount SES9-9xx-01 The Bookham SES9-9xx-01 single emitter laser diode series has been designed to provide the high output power, high coupling efficiency and high reliability required for pumping next

EZ1000

Abstract: intensity C527EZ1000-S11000-2 C527EZ1000 ez100 ausn submount
Contextual Info: Cree EZ1000 Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.

MTC340SS-UV

Contextual Info: Ultraviolet LED Chip Product No: M T C 340SS-UV Peak Emission Wavelength: 340 nm The MTC340SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS