SUB85N10 Search Results

Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

SUB85N10-10

Abstract: SUP85N10-10
Contextual Info: SUP/SUB85N10-10 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 100 85 a 0.012 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N10-10 Top View

SUB85N10-10-E3

Abstract: SUP85N10-10-E3 SUB85N10-10 SUP85N10-10
Contextual Info: SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0105 at VGS = 10 V 100 0.012 at VGS = 4.5 V • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature ID (A) Available RoHS*

SUB85N10-10-E3

Abstract: SUB85N10-10 SUP85N10-10 SUP85N10-10-E3 61008
Contextual Info: SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0105 at VGS = 10 V 100 0.012 at VGS = 4.5 V • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature ID (A) Available RoHS*

SUP/SUB85N10-10

Contextual Info: SPICE Device Model SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP85N10-10

Abstract: SUP85N10-10-E3 0107 na SUB85N10-10 SUB85N10-10-E3
Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

SUB85N10-10

Contextual Info: SUP/SUB85N10-10 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 100 85 a 0.012 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N10-10 Top View

Contextual Info: SPICE Device Model SUP/SUB85N10-10 N-Channel 100-V D-S 175°C MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

CL100

Abstract: LM5068 SUB85N10-10 SUB85N10
Contextual Info: Rf 499Q ENABLE Cf - l i 0.1 |uF PWRGD ± cL 100 j,F UV LOAD LM5068 OV TIMER -EE < 1* V ee SENSE GATE p T 0.22 (j,F cc 22 nF -A A A r Rs 12 mQ JJL Q1 SUB85N10-10

Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SPICE Device Model SUP85N10-10, SUB85N10-10 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

SUB85N10-10

Contextual Info: SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0105 @ VGS = 10 V 100 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 85 a 0.012 @ VGS = 4.5 V TO-220AB D TO-263 G

S69B

Abstract: smd fuse 050f LM5068-1 SMD R0805 R2512 resistor SMD R1206 marking S67B
Contextual Info: LM5068 LM5068 Negative Voltage Hot Swap Controller Literature Number: SNVS254B LM5068 Negative Voltage Hot Swap Controller General Description Features The LM5068 hot-swap controller provides intelligent control of power supply connections during the insertion and removal of circuit cards powered by live system backplanes.

Contextual Info: MIC2587/MIC2587R Single-Channel, Positive High-Voltage Hot Swap Controller Revision 2.0 General Description Features The MIC2587 and MIC2587R are single-channel positive voltage hot swap controllers designed to provide safe insertion and removal of boards for systems that require

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

kemet C0805

Abstract: smd fuse 050f marking s68b S67B 5UB85N10-10 marking S67B LM5068 LM5068-1 LM5068-2 LM5068-3
Contextual Info: LM5068 Negative Voltage Hot Swap Controller General Description Features The LM5068 hot-swap controller provides intelligent control of power supply connections during the insertion and removal of circuit cards powered by live system backplanes. n Safe module insertion and removal from live backplanes

s67b

Abstract: marking S67B
Contextual Info: LM5068 www.ti.com SNVS254C – JANUARY 2004 – REVISED MARCH 2013 LM5068 Negative Voltage Hot Swap Controller Check for Samples: LM5068 FEATURES DESCRIPTION • The LM5068 hot-swap controller provides intelligent control of power supply connections during the

Contextual Info: User's Guide SNVA089A – May 2004 – Revised May 2013 AN-1326 LM5068 Evaluation Board 1 Introduction The LM5068 evaluation board is designed to provide the design engineer with a fully functional hot-swap controller board to evaluate the performance of LM5068 hot-swap controller IC, in a typical environment.

irf540n

Abstract: LT1641 MIC2587 MIC2587R equivalent transistor K 3533
Contextual Info: MIC2587/MIC2587R Single-Channel, Positive High-Voltage Hot Swap Controller General Description Features The MIC2587 and MIC2587R are single-channel positive voltage hot swap controllers designed to provide safe insertion and removal of boards for systems that require

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated