SUB75N03 Search Results

Contextual Info: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S

SUB75N03-04

Abstract: SUP75N03-04
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET

Contextual Info: SPICE Device Model SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

SUB75N03-07

Contextual Info: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V x-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

70745

Abstract: SUP75N03-04 SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263

Contextual Info: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB75N03-04

Contextual Info: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ Ω rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application

Contextual Info: SUP/SUB75N03-04 Siliconix N-Channel 30-V D-S , 175_C MOSFET New Product Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB75N03Ć04 DRAIN connected to TAB G D S S Top View SUP75N03-04

70745

Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET

SUB75N03-07

Abstract: SUP75N03-07
Contextual Info: SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET

S0413

Abstract: SUB75N03-04 SUP75N03-04
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET

S6054

Contextual Info: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

75APF

Abstract: SUP75N03-04
Contextual Info: SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mW rDS on Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB75N03Ć04 DRAIN connected to TAB G D S S Top View SUP75N03-04 N-Channel MOSFET

SUB75N03-07

Abstract: 7106 AN609
Contextual Info: SUB75N03-07_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

diode 57

Contextual Info: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V x-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP75N03-07

Abstract: SUB75N03-07
Contextual Info: SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET

SUP75N03-04

Abstract: SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263

v699

Contextual Info: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP75N03-04

Abstract: SUB75N03-04 SUB75N03
Contextual Info: SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mW rDS on Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB75N03Ć04 DRAIN connected to TAB G D S S Top View SUP75N03-04 N-Channel MOSFET

SUB75N03-07

Abstract: Amp. mosfet 1000 watt MIC5162 MIC5162BMM MIC5162YMM MSOP-10 SUD50N02-06
Contextual Info: MIC5162 Micrel, Inc. MIC5162 Dual Regulator Controller For High-Speed Bus Termination General Description Features The MIC5162 is a dual regulator controller designed for highspeed bus termination. It offers a simple, low-cost JEDEC compliant solution for terminating high-speed, low-voltage

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

eeprom programmer schematic 24c02

Abstract: dongle diagram flow design marking 113a N CHANNEL MOSFET 10A 1000V 256X8 SMT4004 UV11 st microelectronics cb4 24c02 eeprom programmer circuits SMT4004FC-017
Contextual Info: SMT4004 QUAD TRAKKINGTM POWER SUPPLY MANAGER FEATURES & APPLICATIONS INTRODUCTION • Programmable Softstart, Tracking and Voltage Monitoring Functions • Controls 4 Independent Supplies Down to 0.9V • Programmable Bus-Side and Card-Side UV and OV Thresholds

Diode BAY 61

Abstract: irl3803 equivalent Si4425DY equivalent fds6680a equivalent ITF87052SVT1 HUF76132P3 HUF76132S3S HUF76132SK8 HUF76137P3 HUF76139P3
Contextual Info: LC-00011.1 r2 8/24/00 8:23 PM Page 1 www.intersil.com MOSFETs MOSFETs for Computer Desktop, Servers and Workstations Desktop Power Solutions 30V LOGIC LEVEL Part No. Polarity HUF76145P3 N HUF76145S3S N HUF76143P3 N HUF76143S3S N HUF76139P3 N HUF76139S3S N