STT1N Search Results

STT1NF100

Contextual Info: STT1NF100 N-CHANNEL 100V - 0.7Ω - 1A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STT1NF100 100V <0.8Ω 1A • ■ ■ TYPICAL RDS(on) = 0.7Ω EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

Contextual Info: STT1NF100 N-CHANNEL 100V - 0.7Ω - 1A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STT1NF100 100V <0.8Ω 1A • ■ ■ TYPICAL RDS(on) = 0.7Ω EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

1A SOT23

Abstract: STT1NF100
Contextual Info: STT1NF100 N-CHANNEL 100V - 0.7Ω - 1A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STT1NF100 100V <0.8Ω 1A • ■ ■ TYPICAL RDS(on) = 0.7Ω EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

stt1n

Abstract: 33 052
Contextual Info: 35711-08*0 SD 3 .7 0 Ç nwn IL -k s CT1 J c VIEW 'A ' SECTIONsC-C- SECTIONsD-D" NOTES 1. M A T E R IA L : B R A S S TR A D E MARK T 0 .2 5 T H K ' 2. FINISHs 3 5 7 1l-08<Z><2>sNONE 35711-08 I0:PO ST-T1N 3 5 7 0 2 - 0 I04:TIN LEA D 3. RECOMMENDED LEN G TH OF

2SD2599 equivalent

Abstract: 2SD2599
Contextual Info: TOSHIBA 2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV 15.5 ± 0.5 High Voltage VCBO = 1500V Low Saturation Voltage v CE sat = 8V (Max.) tf=0.5/¿s (Typ.) High Speed Bult-in Damper Type