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    STPSC Datasheets (106)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STPSC10065D
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 413.33KB
    STPSC10065DLF
    		STMicroelectronics 650 V 10 A POWER SCHOTTKY SILICO Original PDF 400.68KB
    STPSC10065DY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 415.5KB
    STPSC10065G2-TR
    		STMicroelectronics 650 V POWER SCHOTTKY SILICON CAR Original PDF 398.9KB
    STPSC10065GY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS Original PDF 415.5KB
    STPSC1006D
    		STMicroelectronics 600 V power Schottky silicon carbide diode Original PDF 85.34KB 7
    STPSC1006G-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK Original PDF 8
    STPSC10C065RY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF 211.07KB
    STPSC10H065B-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK Original PDF 14
    STPSC10H065BY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF 227.14KB
    STPSC10H065D
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC Original PDF 14
    STPSC10H065DI
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC Original PDF 14
    STPSC10H065DLF
    		STMicroelectronics DIODES AND RECTIFIERS Original PDF 409.37KB
    STPSC10H065DY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 433.81KB
    STPSC10H065G2-TR
    		STMicroelectronics 650 V, 10 A HIGH SURGE SILICON C Original PDF 386.81KB
    STPSC10H065G-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK Original PDF 14
    STPSC10H065GY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK Original PDF 433.81KB
    STPSC10H12B2-TR
    		STMicroelectronics 1200V, 10A, SILICON CARBIDE POWE Original PDF 223.42KB
    STPSC10H12B-TR1
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK Original PDF 483.84KB
    STPSC10H12CWL
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247 Original PDF 335.64KB
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    STPSC Price and Stock

    STMicroelectronics

    STMicroelectronics STPSC12065D

    Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220AC Tube
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    Verical STPSC12065D 107,765 4
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    • 10 $1.48
    • 100 $1.48
    • 1000 $1.48
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    TME STPSC12065D 1
    • 1 $2.77
    • 10 $2.77
    • 100 $2.77
    • 1000 $2.77
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    ComSIT USA STPSC12065D 50
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    STMicroelectronics STPSC10065DY

    Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220AC Tube Automotive AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () STPSC10065DY 61,000 180
    • 1 -
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    • 100 -
    • 1000 $1.88
    • 10000 $1.76
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    STPSC10065DY 3,000 5
    • 1 -
    • 10 $1.37
    • 100 $1.37
    • 1000 $1.37
    • 10000 $1.37
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    TME STPSC10065DY 1
    • 1 $3.82
    • 10 $2.18
    • 100 $1.91
    • 1000 $1.91
    • 10000 $1.91
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    STMicroelectronics STPSC20065DI

    Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical STPSC20065DI 5,900 3
    • 1 -
    • 10 $2.51
    • 100 $2.51
    • 1000 $2.51
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    STMicroelectronics STPSC8065D

    Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220AC Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () STPSC8065D 4,000 6
    • 1 -
    • 10 $0.96
    • 100 $0.96
    • 1000 $0.96
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    STPSC8065D 3,500 246
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    • 1000 $1.36
    • 10000 $1.27
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    STPSC8065D 1,000 1,000
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    • 1000 $1.70
    • 10000 $1.70
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    Arrow Electronics () STPSC8065D 4,000 19 Weeks 1
    • 1 $0.96
    • 10 $0.96
    • 100 $0.96
    • 1000 $0.96
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    STPSC8065D 1,000 19 Weeks 1,000
    • 1 -
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    • 1000 $0.92
    • 10000 $0.92
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    STPSC8065D 2 19 Weeks 1
    • 1 $0.98
    • 10 $0.98
    • 100 $0.98
    • 1000 $0.98
    • 10000 $0.98
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    Rochester Electronics STPSC8065D 3,500 1
    • 1 -
    • 10 -
    • 100 $1.22
    • 1000 $1.09
    • 10000 $1.02
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    Ameya Holding Limited STPSC8065D 5,193
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    Vyrian STPSC8065D 4,398
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    STMicroelectronics STPSC40065CW

    Diode Schottky 650V 40A 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical STPSC40065CW 3,000 43
    • 1 -
    • 10 -
    • 100 $8.36
    • 1000 $7.47
    • 10000 $7.04
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    Arrow Electronics STPSC40065CW 1 25 Weeks 1
    • 1 $4.23
    • 10 $4.23
    • 100 $4.23
    • 1000 $4.23
    • 10000 $4.23
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    EBV Elektronik STPSC40065CW 1,740 26 Weeks 30
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    Find more STPSC price and stock on Findchips.com

    STPSC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STPSC1006D

    Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		stpsc1006o-220acstpsc1006anystpsc1006d PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		stpsc16h065co-220abstpsc16h065ctdocid024810 PDF

    STPSC606D

    Abstract: STPSC606 STPSC606G-TR STPSC606G
    Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power


    Original     		stpsc606o-220acstpsc606dstpsc606g+1stpsc606g-tr PDF

    STPSC

    Abstract: 8a650
    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power


    Original     		stpsc8h065stpsc8a650 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		stpsc6h065o-220acstpsc6h065dstpsc6h065di+3stpsc6h065b-trstpsc6h065g-trdocid023247 PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		stpsc4h065o-220acstpsc4h065dstpsc4h065di+1docid023598 PDF

    Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		stpsc20h065co-220abstpsc20h065ctdocid023605 PDF

    Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		stpsc8h065co-220abstpsc8h065ctdocid024808 PDF

    STPSC806

    Abstract: STPSC806D STPSC806G-TR
    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		stpsc806o-220acstpsc806dstpsc806g-tr PDF

    Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		stpsc2006cwo-247 PDF

    STPSC1206D

    Abstract: STPSC1206 16288
    Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		stpsc1206stpsc1206d16288 PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		stpsc8h065o-220acstpsc8h065dstpsc8h065di+3stpsc8h065b-trstpsc8h065g-trdocid023603 PDF

    Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		stpsc6h12iec60664stpsc6h12b-tr1docid024631 PDF

    Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		stpsc6th13tidocid024696 PDF

    STPSC20H065C

    Abstract: STPSC20H065CW diode 1.e
    Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1


    Original     		stpsc20h065cstpsc20h065cwdiode 1.e PDF

    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		stpsc806o-220acstpsc806d PDF

    STPSC1006D

    Abstract: JESD97
    Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		stpsc1006do-220acstpsc100njesd97 PDF

    STPSC2006

    Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
    Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		stpsc2006cwo-247stpsc2006silicon carbide diode+1stmicroelectronics power switching PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		stpsc10h065o-220acstpsc10h065dstpsc10h065di+3stpsc10h065b-trstpsc10h065g-trdocid023604 PDF

    Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		stpsc6h12iec60664stpsc6h12b-tr1docid024631 PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		stpsc16h065co-220abstpsc16h065ctdocid024810 PDF

    Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		stpsc12h065co-220abstpsc12h065ctdocid024809 PDF

    STPSC1006D

    Abstract: STPSC1006G 16-2-87
    Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power


    Original     		stpsc1006o-220acstpsc1006dstpsc1006g+116-2-87 PDF

    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		stpsc806o-220acstpsc806d PDF