STPSC Search Results
STPSC Datasheets (106)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| STPSC10065D |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC | Original | 413.33KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10065DLF |
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650 V 10 A POWER SCHOTTKY SILICO | Original | 400.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10065DY |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC | Original | 415.5KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10065G2-TR |
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650 V POWER SCHOTTKY SILICON CAR | Original | 398.9KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10065GY-TR |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS | Original | 415.5KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC1006D |
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600 V power Schottky silicon carbide diode | Original | 85.34KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC1006G-TR |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10C065RY |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY | Original | 211.07KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065B-TR |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK | Original | 14 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065BY-TR |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY | Original | 227.14KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065D |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC | Original | 14 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065DI |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC | Original | 14 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065DLF |
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DIODES AND RECTIFIERS | Original | 409.37KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065DY |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC | Original | 433.81KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065G2-TR |
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650 V, 10 A HIGH SURGE SILICON C | Original | 386.81KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065G-TR |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK | Original | 14 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H065GY-TR |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK | Original | 433.81KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H12B2-TR |
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1200V, 10A, SILICON CARBIDE POWE | Original | 223.42KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H12B-TR1 |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK | Original | 483.84KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC10H12CWL |
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Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247 | Original | 335.64KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STPSC Price and Stock
STMicroelectronics STPSC6H12B-TR1DIODE SIL CARBIDE 1.2KV 6A DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC6H12B-TR1 | Cut Tape | 6,850 | 1 |
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Buy Now | |||||
| STPSC6H12B-TR1 | Digi-Reel | 6,850 | 1 |
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| STPSC6H12B-TR1 | Tape & Reel | 5,000 | 2,500 |
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STPSC6H12B-TR1 | Tape & Reel | 2,500 |
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Buy Now | ||||||
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STPSC6H12B-TR1 | 1,202 |
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Get Quote | |||||||
STMicroelectronics STPSC8H065DLFDIODE SIL CARB 650V 8A POWERFLAT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC8H065DLF | Cut Tape | 3,705 | 1 |
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| STPSC8H065DLF | Digi-Reel | 3,705 | 1 |
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STPSC8H065DLF | Tape & Reel | 19 Weeks | 3,000 |
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STPSC8H065DLF | 15,000 | 20 Weeks | 3,000 |
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Buy Now | |||||
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STPSC8H065DLF | 20 Weeks | 3,000 |
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Get Quote | ||||||
STMicroelectronics STPSC20H12G-TRDIODE SIL CARB 1200V 20A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC20H12G-TR | Digi-Reel | 1,140 |
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| STPSC20H12G-TR | Cut Tape | 1,140 | 1 |
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| STPSC20H12G-TR | Tape & Reel | 1,000 | 1,000 |
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STPSC20H12G-TR | Tape & Reel | 1,000 |
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Buy Now | ||||||
STMicroelectronics STPSC16G065D650 V, 12A HIGH SURGE SILICON CA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC16G065D | Tube | 985 | 1 |
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STPSC16G065D | Tube | 1,000 |
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STPSC16G065D | 1,000 |
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Buy Now | |||||||
STMicroelectronics STPSC10C065RYDIODE SIL CARBIDE 650V 10A I2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC10C065RY | Tube | 964 | 1 |
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Buy Now | |||||
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STPSC10C065RY | 3,000 | 1 |
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Buy Now | ||||||
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STPSC10C065RY | 3,896 |
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Get Quote | |||||||
STPSC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STPSC1006DContextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power |
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STPSC1006 O-220AC STPSC1006any STPSC1006D | |
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Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material |
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STPSC16H065C O-220AB STPSC16H065CT DocID024810 | |
STPSC606D
Abstract: STPSC606 STPSC606G-TR STPSC606G
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STPSC606 O-220AC STPSC606D STPSC606G STPSC606D STPSC606 STPSC606G-TR STPSC606G | |
STPSC
Abstract: 8a650
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STPSC8H065 STPSC 8a650 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 | |
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Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 | |
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Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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STPSC20H065C O-220AB STPSC20H065CT DocID023605 | |
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Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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STPSC8H065C O-220AB STPSC8H065CT DocID024808 | |
STPSC806
Abstract: STPSC806D STPSC806G-TR
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STPSC806 O-220AC STPSC806D STPSC806 STPSC806D STPSC806G-TR | |
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Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power |
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STPSC2006CW O-247 | |
STPSC1206D
Abstract: STPSC1206 16288
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STPSC1206 STPSC1206D STPSC1206 16288 | |
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Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
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Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required. |
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STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 | |
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Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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STPSC6TH13TI DocID024696 | |
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STPSC20H065C
Abstract: STPSC20H065CW diode 1.e
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STPSC20H065C STPSC20H065C STPSC20H065CW diode 1.e | |
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Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power |
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STPSC806 O-220AC STPSC806D | |
STPSC1006D
Abstract: JESD97
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STPSC1006D O-220AC STPSC100n STPSC1006D JESD97 | |
STPSC2006
Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
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STPSC2006CW O-247 STPSC2006 STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 | |
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Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required. |
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STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 | |
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Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material |
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STPSC16H065C O-220AB STPSC16H065CT DocID024810 | |
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Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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STPSC12H065C O-220AB STPSC12H065CT DocID024809 | |
STPSC1006D
Abstract: STPSC1006G 16-2-87
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STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87 | |
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Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power |
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STPSC806 O-220AC STPSC806D | |