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    STPSC Search Results

    STPSC Datasheets (106)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STPSC10065D
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 413.33KB
    STPSC10065DLF
    		STMicroelectronics 650 V 10 A POWER SCHOTTKY SILICO Original PDF 400.68KB
    STPSC10065DY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 415.5KB
    STPSC10065G2-TR
    		STMicroelectronics 650 V POWER SCHOTTKY SILICON CAR Original PDF 398.9KB
    STPSC10065GY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS Original PDF 415.5KB
    STPSC1006D
    		STMicroelectronics 600 V power Schottky silicon carbide diode Original PDF 85.34KB 7
    STPSC1006G-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK Original PDF 8
    STPSC10C065RY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF 211.07KB
    STPSC10H065B-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK Original PDF 14
    STPSC10H065BY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF 227.14KB
    STPSC10H065D
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC Original PDF 14
    STPSC10H065DI
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC Original PDF 14
    STPSC10H065DLF
    		STMicroelectronics DIODES AND RECTIFIERS Original PDF 409.37KB
    STPSC10H065DY
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF 433.81KB
    STPSC10H065G2-TR
    		STMicroelectronics 650 V, 10 A HIGH SURGE SILICON C Original PDF 386.81KB
    STPSC10H065G-TR
    		STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK Original PDF 14
    STPSC10H065GY-TR
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK Original PDF 433.81KB
    STPSC10H12B2-TR
    		STMicroelectronics 1200V, 10A, SILICON CARBIDE POWE Original PDF 223.42KB
    STPSC10H12B-TR1
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK Original PDF 483.84KB
    STPSC10H12CWL
    		STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247 Original PDF 335.64KB
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    STPSC Price and Stock

    STMicroelectronics

    STMicroelectronics STPSC2H12B2Y-TR

    DIODE SIL CARBIDE 1.2KV 5A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () STPSC2H12B2Y-TR Cut Tape 10,938 1
    • 1 $3.29
    • 10 $2.13
    • 100 $1.48
    • 1000 $1.14
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    STPSC2H12B2Y-TR Digi-Reel 10,938 1
    • 1 $3.29
    • 10 $2.13
    • 100 $1.48
    • 1000 $1.14
    • 10000 $1.14
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    STPSC2H12B2Y-TR Tape & Reel 10,000 2,500
    • 1 -
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    • 10000 $0.94
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    Avnet Americas STPSC2H12B2Y-TR Tape & Reel 19 Weeks 2,500
    • 1 -
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    • 10000 $0.97
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    STMicroelectronics STPSC2H12B2Y-TR 2,073 1
    • 1 $2.99
    • 10 $1.94
    • 100 $1.34
    • 1000 $1.13
    • 10000 $1.13
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    EBV Elektronik STPSC2H12B2Y-TR 20 Weeks 2,500
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    STMicroelectronics STPSC10H065GY-TR

    DIODE SIL CARBIDE 650V 10A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () STPSC10H065GY-TR Digi-Reel 2,106 1
    • 1 $4.51
    • 10 $2.97
    • 100 $2.09
    • 1000 $1.76
    • 10000 $1.76
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    STPSC10H065GY-TR Cut Tape 2,106 1
    • 1 $4.51
    • 10 $2.97
    • 100 $2.09
    • 1000 $1.76
    • 10000 $1.76
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    STPSC10H065GY-TR Tape & Reel 1,000 1,000
    • 1 -
    • 10 -
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    • 1000 $1.60
    • 10000 $1.44
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    Avnet Americas STPSC10H065GY-TR Tape & Reel 25 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.53
    • 10000 $1.46
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    STMicroelectronics STPSC10H065GY-TR 1,830 1
    • 1 $4.10
    • 10 $2.70
    • 100 $1.90
    • 1000 $1.73
    • 10000 $1.73
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    TME STPSC10H065GY-TR 1,000
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    • 1000 $1.73
    • 10000 $1.73
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    Ameya Holding Limited STPSC10H065GY-TR 187,498
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    Avnet Silica STPSC10H065GY-TR 2,000 26 Weeks 1,000
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    EBV Elektronik STPSC10H065GY-TR 26 Weeks 1,000
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    STMicroelectronics STPSC20065GY-TR

    DIODE SIL CARBIDE 650V 20A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () STPSC20065GY-TR Cut Tape 1,707 1
    • 1 $7.31
    • 10 $4.92
    • 100 $3.58
    • 1000 $3.36
    • 10000 $3.36
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    STPSC20065GY-TR Digi-Reel 1,707 1
    • 1 $7.31
    • 10 $4.92
    • 100 $3.58
    • 1000 $3.36
    • 10000 $3.36
    		Buy Now
    STPSC20065GY-TR Tape & Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.82
    • 10000 $2.74
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    Avnet Americas STPSC20065GY-TR Tape & Reel 25 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.93
    • 10000 $2.79
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    STMicroelectronics STPSC20065GY-TR 5,670 1
    • 1 $6.43
    • 10 $4.34
    • 100 $3.29
    • 1000 $3.29
    • 10000 $3.29
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    Avnet Silica STPSC20065GY-TR 1,000 26 Weeks 1,000
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    EBV Elektronik STPSC20065GY-TR 26 Weeks 1,000
    • 1 -
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    STMicroelectronics STPSC15H12DY

    DIODE SIL CARB 1200V 15A TO220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC15H12DY Tube 990 1
    • 1 $8.48
    • 10 $8.48
    • 100 $4.58
    • 1000 $4.58
    • 10000 $4.58
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    STMicroelectronics STPSC15H12DY 1
    • 1 $8.31
    • 10 $4.62
    • 100 $4.50
    • 1000 $4.50
    • 10000 $4.50
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    Vyrian STPSC15H12DY 6,579
    • 1 -
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    STMicroelectronics STPSC40H12CWL

    DIODE ARR SIC 1200V 38A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC40H12CWL Tube 320 1
    • 1 $17.82
    • 10 $12.68
    • 100 $9.78
    • 1000 $9.78
    • 10000 $9.78
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    Avnet Americas STPSC40H12CWL Tube 600
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.40
    • 10000 $9.75
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    Arrow Electronics () STPSC40H12CWL 7,200 25 Weeks 1
    • 1 $9.68
    • 10 $9.68
    • 100 $9.68
    • 1000 $9.68
    • 10000 $9.68
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    STPSC40H12CWL 600 25 Weeks 600
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.95
    • 10000 $7.95
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    STPSC40H12CWL 330 25 Weeks 330
    • 1 -
    • 10 -
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    • 1000 $9.68
    • 10000 $9.68
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    STMicroelectronics STPSC40H12CWL 387 1
    • 1 $13.12
    • 10 $10.82
    • 100 $9.58
    • 1000 $9.58
    • 10000 $9.58
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    TME STPSC40H12CWL 1
    • 1 $29.96
    • 10 $27.03
    • 100 $23.87
    • 1000 $20.62
    • 10000 $20.62
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    Vyrian STPSC40H12CWL 8,827
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    STPSC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STPSC1006D

    Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		STPSC1006 O-220AC STPSC1006any STPSC1006D PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		STPSC16H065C O-220AB STPSC16H065CT DocID024810 PDF

    STPSC606D

    Abstract: STPSC606 STPSC606G-TR STPSC606G
    Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power


    Original     		STPSC606 O-220AC STPSC606D STPSC606G STPSC606D STPSC606 STPSC606G-TR STPSC606G PDF

    STPSC

    Abstract: 8a650
    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power


    Original     		STPSC8H065 STPSC 8a650 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF

    Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC20H065C O-220AB STPSC20H065CT DocID023605 PDF

    Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC8H065C O-220AB STPSC8H065CT DocID024808 PDF

    STPSC806

    Abstract: STPSC806D STPSC806G-TR
    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC806 O-220AC STPSC806D STPSC806 STPSC806D STPSC806G-TR PDF

    Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		STPSC2006CW O-247 PDF

    STPSC1206D

    Abstract: STPSC1206 16288
    Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		STPSC1206 STPSC1206D STPSC1206 16288 PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 PDF

    Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 PDF

    Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC6TH13TI DocID024696 PDF

    STPSC20H065C

    Abstract: STPSC20H065CW diode 1.e
    Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1


    Original     		STPSC20H065C STPSC20H065C STPSC20H065CW diode 1.e PDF

    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC806 O-220AC STPSC806D PDF

    STPSC1006D

    Abstract: JESD97
    Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		STPSC1006D O-220AC STPSC100n STPSC1006D JESD97 PDF

    STPSC2006

    Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
    Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		STPSC2006CW O-247 STPSC2006 STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 PDF

    Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		STPSC16H065C O-220AB STPSC16H065CT DocID024810 PDF

    Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		STPSC12H065C O-220AB STPSC12H065CT DocID024809 PDF

    STPSC1006D

    Abstract: STPSC1006G 16-2-87
    Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87 PDF

    Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		STPSC806 O-220AC STPSC806D PDF