STPSC Search Results

STPSC Datasheets (106)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
STPSC10065D	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF	413.33KB
STPSC10065DLF	STMicroelectronics	650 V 10 A POWER SCHOTTKY SILICO	Original	PDF	400.68KB
STPSC10065DY	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF	415.5KB
STPSC10065G2-TR	STMicroelectronics	650 V POWER SCHOTTKY SILICON CAR	Original	PDF	398.9KB
STPSC10065GY-TR	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS	Original	PDF	415.5KB
STPSC1006D	STMicroelectronics	600 V power Schottky silicon carbide diode	Original	PDF	85.34KB	7
STPSC1006G-TR	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK	Original	PDF		8
STPSC10C065RY	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY	Original	PDF	211.07KB
STPSC10H065B-TR	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK	Original	PDF		14
STPSC10H065BY-TR	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY	Original	PDF	227.14KB
STPSC10H065D	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF		14
STPSC10H065DI	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC	Original	PDF		14
STPSC10H065DLF	STMicroelectronics	DIODES AND RECTIFIERS	Original	PDF	409.37KB
STPSC10H065DY	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF	433.81KB

STPSC10H065G2-TR	STMicroelectronics	650 V, 10 A HIGH SURGE SILICON C	Original	PDF	386.81KB
STPSC10H065G-TR	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK	Original	PDF		14
STPSC10H065GY-TR	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK	Original	PDF	433.81KB
STPSC10H12B2-TR	STMicroelectronics	1200V, 10A, SILICON CARBIDE POWE	Original	PDF	223.42KB
STPSC10H12B-TR1	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK	Original	PDF	483.84KB
STPSC10H12CWL	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247	Original	PDF	335.64KB

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STMicroelectronics


STMicroelectronics STPSC6H065DLF DIODE SIL CARB 650V 6A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STPSC6H065DLF	Cut Tape	10,348		1	1 $3.24 10 $2.11 100 $1.47 1000 $1.25 10000 $1.25	Buy Now
	STPSC6H065DLF	Digi-Reel	10,348		1	1 $3.24 10 $2.11 100 $1.47 1000 $1.25 10000 $1.25	Buy Now
	STPSC6H065DLF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.02	Buy Now
Avnet Americas	STPSC6H065DLF	Reel		19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.05	Buy Now
STMicroelectronics	STPSC6H065DLF		227		1	1 $3.16 10 $2.01 100 $1.44 1000 $1.23 10000 $1.23	Buy Now
Avnet Silica	STPSC6H065DLF		6,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	STPSC6H065DLF				3,000	1 - 10 - 100 - 1000 - 10000 $1.28	Buy Now
STMicroelectronics STPSC10H12GY-TR DIODE SIL CARB 1.2KV 10A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STPSC10H12GY-TR	Cut Tape	1,195		1	1 $2.79 10 $2.77 100 $2.77 1000 $2.77 10000 $2.77	Buy Now
	STPSC10H12GY-TR	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.43 10000 $2.43	Buy Now
STMicroelectronics	STPSC10H12GY-TR		5,198		1	1 $2.71 10 $2.66 100 $2.66 1000 $2.64 10000 $2.64	Buy Now
Chip Stock	STPSC10H12GY-TR		1,125			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	STPSC10H12GY-TR				1,000	1 - 10 - 100 - 1000 $3.11 10000 $3.11	Buy Now
STMicroelectronics STPSC20065GY-TR DIODE SIL CARBIDE 650V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STPSC20065GY-TR	Digi-Reel	1,128		1	1 $6.50 10 $4.43 100 $3.36 1000 $3.36 10000 $3.36	Buy Now
	STPSC20065GY-TR	Cut Tape	1,128		1	1 $6.50 10 $4.43 100 $3.36 1000 $3.36 10000 $3.36	Buy Now
	STPSC20065GY-TR	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.94 10000 $2.94	Buy Now
STMicroelectronics	STPSC20065GY-TR		814		1	1 $6.31 10 $4.34 100 $3.29 1000 $3.29 10000 $3.29	Buy Now
Chip Stock	STPSC20065GY-TR		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STPSC20065GY-TR		1,000	27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	STPSC20065GY-TR				1,000	1 - 10 - 100 - 1000 $3.63 10000 $3.63	Buy Now
STMicroelectronics STPSC10H065DY DIODE SIL CARB 650V 10A TO220AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC10H065DY	Tube	1,092		1	1 $3.96 10 $3.96 100 $1.86 1000 $1.67 10000 $1.67	Buy Now
STMicroelectronics	STPSC10H065DY		436		1	1 $3.88 10 $1.94 100 $1.81 1000 $1.64 10000 $1.64	Buy Now
IBS Electronics	STPSC10H065DY		900		50	1 - 10 - 100 $2.35 1000 $2.30 10000 $2.30	Buy Now
STMicroelectronics STPSC8H065DI DIODE SIC 650V 8A TO220AC INS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC8H065DI	Tube	861		1	1 $2.28 10 $2.28 100 $1.46 1000 $1.46 10000 $1.46	Buy Now
STMicroelectronics	STPSC8H065DI		688		1	1 $2.22 10 $1.44 100 $1.43 1000 $1.43 10000 $1.43	Buy Now
Avnet Silica	STPSC8H065DI		1,700	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STPSC8H065DI		400	21 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	STPSC8H065DI				1,000	1 - 10 - 100 - 1000 $1.95 10000 $1.85	Buy Now

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STPSC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
STPSC1006D Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power	Original	STPSC1006 O-220AC STPSC1006any STPSC1006D	PDF
Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material	Original	STPSC16H065C O-220AB STPSC16H065CT DocID024810	PDF
STPSC606D Abstract: STPSC606 STPSC606G-TR STPSC606G Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power	Original	STPSC606 O-220AC STPSC606D STPSC606G STPSC606D STPSC606 STPSC606G-TR STPSC606G	PDF
STPSC Abstract: 8a650 Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power	Original	STPSC8H065 STPSC 8a650	PDF
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247	PDF
Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598	PDF
Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC20H065C O-220AB STPSC20H065CT DocID023605	PDF
Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC8H065C O-220AB STPSC8H065CT DocID024808	PDF
STPSC806 Abstract: STPSC806D STPSC806G-TR Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power	Original	STPSC806 O-220AC STPSC806D STPSC806 STPSC806D STPSC806G-TR	PDF
Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power	Original	STPSC2006CW O-247	PDF
STPSC1206D Abstract: STPSC1206 16288 Contextual Info: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material	Original	STPSC1206 STPSC1206D STPSC1206 16288	PDF
Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603	PDF
Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.	Original	STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631	PDF
Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC6TH13TI DocID024696	PDF

STPSC20H065C Abstract: STPSC20H065CW diode 1.e Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1	Original	STPSC20H065C STPSC20H065C STPSC20H065CW diode 1.e	PDF
Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power	Original	STPSC806 O-220AC STPSC806D	PDF
STPSC1006D Abstract: JESD97 Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power	Original	STPSC1006D O-220AC STPSC100n STPSC1006D JESD97	PDF
STPSC2006 Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power	Original	STPSC2006CW O-247 STPSC2006 STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING	PDF
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604	PDF
Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.	Original	STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631	PDF
Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material	Original	STPSC16H065C O-220AB STPSC16H065CT DocID024810	PDF
Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC12H065C O-220AB STPSC12H065CT DocID024809	PDF
STPSC1006D Abstract: STPSC1006G 16-2-87 Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power	Original	STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87	PDF
Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power	Original	STPSC806 O-220AC STPSC806D	PDF

STPSC Search Results

STPSC Datasheets (106)

STPSC Price and Stock

STMicroelectronics STPSC6H065DLF

STMicroelectronics STPSC10H12GY-TR

STMicroelectronics STPSC20065GY-TR

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STMicroelectronics STPSC8H065DI

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