STP7N Search Results

7n52

Abstract: 1525P
Contextual Info: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3

STP7NB80FP

Abstract: STP7NB80
Contextual Info: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB80 STP7NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.5 Ω < 1.5 Ω 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY

F7NM80

Abstract: D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80
Contextual Info: STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS on ID STD7NM80 800 V < 1.05 Ω 6.5 A STD7NM80-1 800 V < 1.05 Ω 6.5 A STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80

STP7NA60

Abstract: STP7NA60FI
Contextual Info: STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA60 STP7NA60FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V <1Ω <1Ω 7.2 A 4.4 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STP7NA40

Abstract: STP7NA40FI
Contextual Info: STP7NA40 STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <1Ω <1Ω 6.5 A 4.1 A TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

stp7n60

Contextual Info: STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 1 Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.95 Ω 5A STD7N60M2 DPAK STP7N60M2

7NC70Z

Abstract: MOSFET 700V TO 220 L9 Zener STB7NC70Z-1 STP7NC70Z STP7NC70ZFP
Contextual Info: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE

Contextual Info: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1 .2£2 - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB 80 STP7NB80FP • . . . . V dss R D S on Id 800 V 800 V < 1.5 n < 1.5 Q, 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: en SGS-THOMSON ¡ILIOTI^OKinei STP7NB40 STP7NB40FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE S TP7NB40 STP 7N B40FP • m . . . V dss RDS on Id 400 V 400 V < 0.9 Q. < o.9 a 7.0 A 4.4 A TYPICAL RDS(on) = 0.75 Q, EXTREMELY HIGH dV/dt CAPABILITY

P7NB60FP

Abstract: p7nb60 stp7nb60fp STP7NB60 Part Marking TO-220 STMicroelectronics morocco P7NB60 TUBE 1625
Contextual Info: STP7NB60 STP7NB60FP N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP7NB60 600 V < 1.2 Ω 7.2 A STP7NB60FP 600 V < 1.2 Ω 4.1 A FEATURES SUMMARY • TYPICAL RDS(on) = 1.0 Ω

Contextual Info: STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 2 3 1 VDS RDS on max ID PTOT 800 V 1.2 Ω 6A 110 W STD7N80K5

STP7NB30

Abstract: STP7NB30FP
Contextual Info: STP7NB30 STP7NB30FP N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB30 STP7NB30FP • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 0.90 Ω < 0.90 Ω 7A 4A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

P7NK80

Abstract: p7nk80zf P7NK80ZFP p7nk STP7NK80ZFP P7NK80Z b7nk80z b7nk80 8979 STB7NK80Z-1
Contextual Info: STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A STB7NK80Z

STP7NC40

Contextual Info: STP7NC40 N-CHANNEL 400V - 0.75Ω - 6A TO-220 PowerMESH II MOSFET TYPE VDSS RDS on ID STP7NC40 400 V <1Ω 6A TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE • ■ ■ ■ 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area

STP7NE10L

Contextual Info: STP7NE10L N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP7NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 7A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

D7NM60N

Abstract: P7NM80 std7nm80 std7nm80 st
Contextual Info: STD7NM80 - STD7NM80-1 STF7NM80 - STP7NM80 N-channel 800V - 0.85Ω - 6.5A - TO-220 - TO-220FP - IPAK - DPAK MDmesh Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STD7NM80 800V <0.95Ω 6.5A STD7NM80-1 800V <0.95Ω 6.5A STF7NM80

STF7NK30Z

Abstract: STP7NK30Z Part Marking TO-220 STMicroelectronics
Contextual Info: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω EXTREMELY HIGH dv/dt CAPABILITY

7N95K3

Abstract: STP7N95K3 STF7N95K3 STW7N95K3 7N95 STP7N95 zenerprotected
Contextual Info: STF7N95K3 STP7N95K3, STW7N95K3 N-channel 950 V, 1.1 Ω, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET Features • Type VDSS RDS on max ID Pw STF7N95K3 950 V < 1.35 Ω 7.2 A 35 W STP7N95K3 950 V < 1.35 Ω 7.2 A 150 W STW7N95K3

7NA60

Contextual Info: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING

TP7N20

Abstract: stp7n2
Contextual Info: £jï 7 20 7 20 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TP7N 20 STP7N 20FI dss 200 V 200 V RDS on Id < 0 .6 5 Q. < 0 .6 5 Q. 7 A 4 A TYPICAL R D S (on) = 0.55 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

p7nc80zf

Abstract: p7nc80 P7NC80Zfp p7nc80z B2 Zener P7NC L9 Zener STB7NC80Z STB7NC80Z-1 STB7NC80ZT4
Contextual Info: STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 • ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < < < < V V V V 1.5 Ω

7N52DK3

Contextual Info: STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 620 V, 0.98 Ω, 6.2 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID Pw 3 1 STD7N52DK3 STF7N52DK3 STP7N52DK3 620 V 620 V 620 V < 1.15 Ω < 1.15 Ω < 1.15 Ω

STP7NB30

Abstract: STP7NB30FP
Contextual Info: STP7NB30 STP7NB30FP N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB30 STP7NB30FP • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 0.90 Ω < 0.90 Ω 7A 4A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STP7NE10 N - CHANNEL 100V - 0.3 i l - 7A - T0-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S T P 7 N E 10 • . . . . V dss R dS oii Id 100 V < 0.4 a 7 A TYPICAL R D S (on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED