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marking 52a Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking Contextual Info: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	stp3481 -30v/-5 55m-ohm -30v/-4 +575m-ohm marking 52a diode 30v tsop diode s6 52a 6p marking	PDF

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marking 52a

Abstract: DIODE 30V TSOP DIODE S6 52a 6P marking
Contextual Info: STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

stp3481 -30v/-5 55m-ohm -30v/-4 +5

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