STN48 Search Results

STN48

Abstract: P008B TIP48
Contextual Info: STN48 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING SOT-223 POWER PACKAGE IN TAPE & REEL ELECTRICALLY SIMILAR TO TIP48 2 APPLICATIONS ■ PCMCIA CARDS ■ GENERAL PURPOSE SWITCHING AND

marking 822

Abstract: STN4822 Dual N
Contextual Info: 822 STN4 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.

Contextual Info: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

A2732

Abstract: STN48
Contextual Info: 85 STN4 STN485 850 N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: STN484D N Channel Enhancement Mode MOSFET 30.0A DESCRIPTION STN484D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN484D has been designed specially to improve the overall efficiency of DC/DC converters using

Contextual Info: STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

SMBJ5A

Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
Contextual Info: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

ST4828N

Abstract: ST4828 STN4828 4828 datasheet 4828 Power MOSFET 50V 10A MOSFET 10A STN48 marking ST4828N SOP-8
Contextual Info: N4828 ST STN Dual N Channel Enhancement Mode MOSFET 10A DESCRIPTION The ST4828N is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.