STMICROELECTRONICS MARKING STYLE Search Results

STMicroelectronics marking code date

Abstract: Date Code Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING sumitomo crm epoxy Part Marking STMicroelectronics Ablebond 8360 marking code stmicroelectronics ablestik 8360 device Marking STMicroelectronics 1076E
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/451 FWH AND LPC FAMILY PLCC32 PACKAGE ENVIRONMENTAL FRIENDLY AND ASSEMBLY LOCATION CHANGE 2004/02/12 PCN MPG-EEP/04/451 Product Family /Commercial Product M50FW M50LPW M50FLW Type Of Change Multiple types of changes

STMicroelectronics marking code date

Abstract: CHN G4 chn 509 marking code stmicroelectronics Date Code Marking STMicroelectronics CHN 450 SUMITOMO G700 ablebond 8290 Part Marking STMicroelectronics ST MICROELECTRONICS DATE CODE MARKING
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MPG-EEP/04/578 M50FW, M50LPW, M50FLW Firmware Hub and Low Pin Count Product Families, TSOP40 Environmental Friendly Package and Assembly Location Change WHAT IS THE CHANGE? The present PCN replaces and upgrades PCN MPG/EE/0086 / CPCN MPG/EEP/04/450.

SOT-666IP

Abstract: 020L2
Contextual Info: ESDA6V1-5P6 TRANSIL ARRAY FOR ESD PROTECTION ASD™ MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment This device is particularly adapted to the protection of symmetrical signals.

trays STMICROELECTRONICS

Contextual Info: SD1458 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –55 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ HIGH SATURATED POWER CAPABILITY ■ DESIGNED FOR HIGH POWER LINEAR

M135

Abstract: SD1274 gp 832
Contextual Info: SD1274 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

TH416

Abstract: SD1729
Contextual Info: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon

SD1407

Abstract: vk200 VK-200 vk 200 SD140
Contextual Info: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

Arco 426

Contextual Info: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION

SD1446

Abstract: arco 468 M113
Contextual Info: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon

Contextual Info: SD1455 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 25 VOLTS ■ IMD - 55dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS

SD1487

Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465
Contextual Info: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon

electrolytic capacitor 47uF

Contextual Info: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base

Contextual Info: STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE STL20NM20N • ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 200 V < 0.105 Ω 20 A WORLDWIDE LOWEST GATE CHARGE

transistor M122

Abstract: SD1433 3M-K6098 M122 3M-K-6098
Contextual Info: SD1433 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ CLASS C ■ EFFICIENCY 60% ■ COMMON EMITTER ■ POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications in

SD1275-1

Abstract: M113 SD1275-01
Contextual Info: SD1275-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 40 W MIN. WITH 9.0 dB GAIN DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for

choke vk200

Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
Contextual Info: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM

CPM13B

Abstract: Arco 403
Contextual Info: SD1459 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS ■ POUT = 20 W MIN. WITH 7.5 dB GAIN

TCC3100

Abstract: SD1456
Contextual Info: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION

capacitor 100uF 63V

Contextual Info: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

Contextual Info: SD1423 RF POWER BIPOLAR TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS FEATURES SUMMARY • 800 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ CLASS AB LINEAR OPERATION ■ POUT = 15 W MIN. WITH 8.0 dB GAIN

Contextual Info: SD1274 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN s ct u d o DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

SD1274-01

Abstract: M113 F136
Contextual Info: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for

Contextual Info: SD1398 RF POWER BIPOLAR TRANSISTORS 850-960 MHZ APPLICATIONS FEATURES SUMMARY • 850 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ GOLD METALLIZATION ■ POUT = 6.0 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

TH560

Contextual Info: SD1730 TH560 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 12 dB GAIN