STMICROELECTRONICS DIODE MARKING CODE GW Search Results

STMicroelectronics DIODE marking code DX

Abstract: STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

Contextual Info: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA

Contextual Info: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA

STMicroelectronics DIODE marking code Et

Abstract: STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

STMicroelectronics DIODE marking code Et

Abstract: STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A
Contextual Info: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

RAD SMD MARKING CODE

Abstract: smd diode marking code TO3
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

GW30N90D

Abstract: JESD97 STGW30N90D
Contextual Info: STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT Preliminary Data Features Type VCES VCE sat @25°C IC @100°C STGW30N90D 900V < 2.75V 30A • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

GW35NC60WD

Abstract: STGW35NC60WD Gw35nc60 Diode CO 820 JESD97
Contextual Info: STGW35NC60WD N-channel 40A - 600V - TO-247 Ultra fast switching PowerMESH IGBT Preliminary Data Features Type VCES VCE sat Max @25°C IC @100°C STGW35NC60WD 600V < 2.5V 37A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility)

transil sm6t

Abstract: sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb
Contextual Info: SM6T Transil Features • Peak Pulse Power: 600 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 220 V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time K ■ UL recognized Unidirectional A Bidirectional Description

diode GU do-214aA

Abstract: STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode
Contextual Info: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■

transil marking EM

Contextual Info: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■

GW30NC60WD

Abstract: STGW30NC60WD JESD97 GW30NC60W
Contextual Info: STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60WD 600V < 2.5V 30A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■

solar inverters schematic diagram

Abstract: STGW50HF60SCD ST IGBT code marking
Contextual Info: STGW50HF60SCD 60 A - 600 V - very low drop IGBT with Schottky silicon carbide diode Target specification Features • Very low on-state voltage drop ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ No or negligible reverse recovery antiparallel

STGW35HF60WD

Contextual Info: STGW35HF60WD 35 A, 600 V ultra fast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses ■ VCE sat classified for easy parallel connection ■ Ultra fast soft recovery antiparallel diode 2 Applications

GW19NC60WD

Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

internal structure of ic 741

Abstract: internal circuit diagram of IC 741 ic 741 DIODE STGW25H120DF
Contextual Info: STGW25H120DF 25 A, 1200 V, field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Easy paralleling ■ Ultra fast free-wheeling diode co-packaged ■ Low thermal resistance

STGW30NC60VD

Abstract: GW30NC60VD JESD97
Contextual Info: STGW30NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW30NC60VD 600V VCE sat (Max)@ 25°C IC @100°C <2.5V 40A • High current capability ■ High frequency operation up to 50KHz ■ Very soft ultra fast recovery antiparallel diode

GW19NC60WD

Abstract: gw19nc60w
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

Contextual Info: STGW60H65F 60 A, 650 V field stop trench gate IGBT Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

STGW30NC120HD

Abstract: GW30NC120HD JESD97
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)