STMICROELECTRONICS DIODE MARKING CODE EX Search Results

Contextual Info: STS4NF100 N-channel 100 V, 0.065 Ω typ., 4 A STripFET II Power MOSFET in SO-8 package Datasheet − production data Features Order code VDS RDS on max ID STS4NF100 100 V 0.070 Ω 4A • Exceptional dv/dt capability ■ 100 % avalanche tested ■ Application oriented characterization

diode smd marking Z2

Abstract: diode Z2 018 SMD MARKING CODE Z2 diode marking z2 marking code z2 esdaxlc6
Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet  preliminary data Features • Bidirectional device ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2

Contextual Info: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

STD40NF10

Abstract: D40NF
Contextual Info: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application

DALC12

Abstract: marking code stmicroelectronics STMicroelectronics DIODE marking code STMicroelectronics Marking CODE marking code so8 stmicroelectronics MARKING SO8 DALC112S1 DALC112S1RL
Contextual Info: DALC112S1  Application Specific Discretes A.S.D.TM LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O SO8 DESCRIPTION

STS3N95K3

Contextual Info: STS3N95K3 N-channel 950 V, 5 Ω, 0.4 A SO-8 Zener-protected SuperMESH3 Power MOSFET Preliminary data Features Order code VDSS RDS on max ID Pw STS3N95K3 950 V < 6.3 Ω 0.4 A 2W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized

Contextual Info: ESDAXLC6-1BT2 Single-line bidirectional ESD protection for high speed interface Datasheet  production data Features • Bidirectional device ■ Multiple ESD strike sustainability ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ Thin SOD882 package - 0402 size compatible

Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

W20NK50

Abstract: w20nk50z W20NK50Z ST STW20NK50Z ST W20NK STW20NK50Z
Contextual Info: STW20NK50Z N-channel 500 V, 0.23 Ω, 20 A SuperMESH Power MOSFET Zener-protected in TO-247 package Datasheet — production data Features Order code VDSS RDS on max STW20NK50Z 500 V < 0.27 Ω • Extremely high dv/dt capability ■ 100% avalanche tested

f10nk50z

Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Contextual Info: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested

d25nf

Abstract: d25nf10l D25NF10LA d25nf10
Contextual Info: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications

diode cathode marking code 7-7-7-7

Abstract: diode marking code 7-7-7-7 SOD882 ESDAXLC6-1MY2
Contextual Info: ESDAXLC6-1MY2 Extra low capacitance single line TVS Features • Extra low capacitance 0.35 pF max on a wide frequency spectrum 200 MHz - 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.55 mm max

STPS120M

Contextual Info: STPS120M POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 1A VRRM 20 V Tj (max) 150°C VF(max) 0.41 V A C FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses Extremely fast switching

4NF06L

Abstract: STN4NF06L 4nf06
Contextual Info: STN4NF06L N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET Features Order code VDSS RDS on max ID STN4NF06L 60 V < 0.1 Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

Contextual Info: STPS1L40M LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 1A VRRM 40 V Tj (max) 150°C VF(max) 0.40 V A C FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses Extremely fast switching

STPS1L20M

Contextual Info: STPS1L20M LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 1A VRRM 20 V Tj (max) 150°C VF(max) 0.37 V A C FEATURES AND BENEFITS • ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses Extremely fast switching

Contextual Info: ESDAXLC6-1BT2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device  Multiple ESD strike sustainability  Extra low diode capacitance: 0.4 pF  Low leakage current  Thin SOD882 package - 0402 size compatible

Contextual Info: ESDAXLC6-1MY2 Extra low capacitance single line TVS Features • Extra low capacitance 0.35 pF max on a wide frequency spectrum 200 MHz - 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.55 mm max

st micro electronics top marking

Abstract: WLCSP stencil design st smd diode marking code smd diode order marking code stmicroelectronics VIA Technology st micro marking
Contextual Info: ESDAXLC4-1BF3 Single line extra low capacitance TVS Features • Stand-off voltage 3 V ■ Ultra low capacitance 0.3 pF on a wide frequency spectrum, 200 to 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.36 mm max

Contextual Info: STPS1545C-Y Automotive power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Avalanche capability specified ■ AEC-Q101 qualified A1 K A2 K A2 A1 Description D2PAK STPS1545CGY Dual center tap Schottky rectifier suited for high

STL70N

Abstract: powerflat 5x6 70N4 70N4L
Contextual Info: STL70N4LLF5 N-channel 40 V, 0.0061 Ω, 18 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL70N4LLF5 40 V 0.0067 Ω 18 A (1) 1. The value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

130NF20D

Abstract: TH 2190 mosfet TH 2190 mosfet isolated STY130NF20D th 2190
Contextual Info: STY130NF20D N-channel 200 V, 0.010 Ω, 130 A, Max247 STripFET II with fast recovery diode Power MOSFET Preliminary data Features Type VDSS RDS on max ID STY130NF20D 200 V < 0.012 Ω 130 A • Exceptional dv/dt capability ■ 100% avalanche tested ■

Contextual Info: STPS2045C-Y Automotive power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Avalanche rated ■ AEC-Q101 qualified A1 K A2 K A2 A1 Description D2PAK STPS2045CGY Dual center tap Schottky rectifier suited for high

B80NF55-06

Contextual Info: STB80NF55-06T N-channel 55 V, 5 mΩ, 80 A STripFET II Power MOSFET in a D²PAK package Features Order code VDSS RDS on max. ID STB80NF55-06T 55 V < 6.5 mΩ 80A TAB • Exceptional dv/dt capability Applications ■ Switching application ■ Automotive 3