STK8 Search Results

itt 2222

Abstract: ITT 2222 A stk8280 ic 4006
Contextual Info: STK8280 80WminAF/<7^F>^ìb*S 2«* Si A N Y O A ^ ^ X 'S U H ^-Sfc * ô ? 7 X T V • r^'sjißcox -< »y ■?■^ r t > r - ^ £ • / t 7 - ^ t / ^ 7 A 3 ‘/ h o - y u 0 » * â * i A î n n 'i n ÿ ) H X t / >AJX4ft{RII}^i'ÿ4fti^AA < * fc W f- T ît *: a c ¿ ic ¿ o M^ ^ V i s t Æ i i g r e * -,

Contextual Info: STK822 N-channel 24V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 24V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

4006 transformer

Abstract: STK8270 MG-200 thermistor op amp temperature controller circuit Transformer MG-200
Contextual Info: STK8270 No.987 SANYO 70W Thick Film Hybrid Integrated Circuit min AF Power Amp. Output Stage Dual Supplies With Built-in Quasi Class A Bias Circuit Features 1. Switching distortion peculiar to class B amp. is zero. 2. Since power stage, bias controller, and temperature compensator are incor­

ST T4 1060

Abstract: K822 JESD97 STK822 Transistor k822
Contextual Info: STK822 N-channel 25V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 25V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

K802

Abstract: STK802 JESD97 STK80
Contextual Info: STK802 N-channel 30V - 0.0019Ω - 34A - PolarPAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on RDS(on)*Qg PTOT STK802 30V <0.0025Ω 105.6nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

STK830F

Contextual Info: STK830F Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.3Ω(Max.) Ordering Information Type NO. Marking

Contextual Info: STK830D Semiconductor Advanced N-Ch Power MOSFET PIN Connection Features • • • • D High Voltage: BVDSS=500V Min. Low Crss : Crss=10pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5 (Max.) D G Ordering Information Type N o. M a r k in g

Contextual Info: STK830P Semiconductor Advanced Power MOSFET Features • • • • High Voltage: BVDSS=500V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5 (Max.) Ordering Information Type N O. M a r k in g STK830P Pa ck a ge Code

K800

Abstract: JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

STK830P

Abstract: STK830 17-NC
Contextual Info: STK830P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO.

syntek

Abstract: STK88C4831 microcontroller inverter ic number
Contextual Info: Syntek Semiconductor Co., Ltd. STK88C4831 1. FEATURES : * Operating voltage : 2.5V - 3.5V. * Maximum CPU operating frequency : 4MHz at 2.7V * Built-in RC oscillator circuit. The oscillation frequency is controlled by an external resistor. * Built-in PLL circuit to generate the system clock with 5 times oscillation frequency.

stk830

Abstract: STK830F KST-H034-000
Contextual Info: STK830F Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA Max. @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. STK830F

K822

Abstract: JESD97 STK822
Contextual Info: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

Contextual Info: STK830D Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V Min. Low Crss : Crss=10pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. Marking STK830D

transistor MARKING K4

Contextual Info: STK850 N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK STripFET™ Power MOSFET General features Type VDSS RDS on RDS(on)*Q g PTOT STK850 30V <0.0029Ω 58.8 nC*mΩ 5.2W • ULTRA LOW TOP AND BOTTOM JUNCTION TO CASE THERMAL RESISTANCE ■ VERY LOW CAPACITANCES

JESD97

Abstract: K800 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

Contextual Info: STK800 N-CHANNEL 30V - 0.006 Ω - 20A - PolarPAK STripFET™ MOSFET PRELIMINARY DATA General features Type VDSS STK800 30 V RDS on Package RDS(on)*Qg <0.007 Ω 100.5 nC*mΩ PTOT 5.2 W • TYPICAL RDS(on) = 0.006 Ω ■ ULTRA LOW TOP AND BOTTOM JUNCTION

Qg17nC

Abstract: STK830F STK830 17-NC
Contextual Info: STK830F Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. Marking STK830F

k802

Contextual Info: STK802 N-channel 30V - 0.0019Ω - 34A - PolarPAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on RDS(on)*Qg PTOT STK802 30V <0.0025Ω 105.6nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

stk8001

Abstract: K800 JESD97 STK800
Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

Contextual Info: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type RDS on VDSS RDS(on)*Qg PTOT ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b Application e O t e l ) o s ( s t Description b c u O d o ) r s P ( t c e t u e l d