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STDL150 Datasheets (1)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
STDL150		Samsung Electronics	STDL150 Supply Voltage (V) = 1.5 Technology(micron) = 0.13micron	Original	PDF	23.62KB	6

STDL150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ternary content addressable memory VHDL Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge Contextual Info: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V	Original	stdl150 13nw/mhz arm920t/arm940t ternary content addressable memory vhdl +9arm1020e smart asic bga arm dual port sram compiler samsung asic 0.13um standard cell library standard cell 0.13um system-on-chip asic dspg samsung lcd jtag content addressable memory" precharge	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	br-04-all-005 br-04-all-004 risc-processor s3c2410 mr16r1624df0-cm8 +8arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n k9w8g08u1m sandisk micro sd card 2gb arm9 s3c2440 k9f1g08u0a k6x8008c2b	PDF

Catalog Datasheet

Type

Document Tags

PDF

ternary content addressable memory VHDL

Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
Contextual Info: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V

Original

stdl150 13nw/mhz arm920t/arm940t ternary content addressable memory vhdl +9

PDF

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Original

br-04-all-005 br-04-all-004 risc-processor s3c2410 mr16r1624df0-cm8 +8

PDF