STD25 Search Results

STD25NF20

Abstract: 25NF2
Contextual Info: STD25NF20 N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFETs in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Extremely low gate charge

STD25P03LT4G

Abstract: dpak mosfet 25p03lg STD25P03L NTD25P03
Contextual Info: NTD25P03L, STD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

STD25NF10

Contextual Info: STD25NF10 N-CHANNEL 100V - 0.033Ω - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD25NF10 100 V < 0.038 Ω 25 A TYPICAL RDS(on) = 0.033Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

STripFET

Contextual Info: STD25NF10 N-CHANNEL 100V - 0.041Ω - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD25NF10 100 V < 0.048 Ω 25 A TYPICAL RDS(on) = 0.041Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

d25nf

Abstract: d25nf10 STD25NF10T4 JESD97 STD25NF10
Contextual Info: STD25NF10 N-channel 100V - 0.033Ω - 25A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STD25NF10 100V < 0.038Ω 25A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested

Contextual Info: STD25NE03L N - CHANNEL 30V - 0.019 f ì - 25A - TO-251/TO-252 STripFET POWER MOSFET TYP E V dss R dS oii Id STD25NE03L 30 V < 0 .0 2 5 Q. 25 A . TYPICAL RDS(on) =0.019 £2 100% AVALANCHE TESTED . LOW GATE CHARGE . APPLICATION ORIENTED CHARACTERIZATION

STD25NF10

Contextual Info: STD25NF10 N-CHANNEL 100V - 0.033Ω - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD25NF10 100 V < 0.038 Ω 25 A TYPICAL RDS(on) = 0.033Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STD25NF20 Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET low gate charge Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS @ TJmax RDS on max ID PTOT STD25NF20 200 V 0.125 Ω 18 A 110 W • Designed for automotive applications and

d25nf

Abstract: d25nf10l D25NF10LA d25nf10
Contextual Info: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications

STD25NF

Contextual Info: STD25NF10 N-CHANNEL 100V - 0.041Ω - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD25NF10 100 V < 0.048 Ω 25 A TYPICAL RDS(on) = 0.041Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

STripFET

Abstract: STD25NE03L mosfet morocco STD25NE
Contextual Info: STD25NE03L  N - CHANNEL 30V - 0.019 Ω - 25A - TO-251/TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD25NE03L 30 V < 0.025 Ω 25 A • ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 Ω typ., 25 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDSS RDS on max.(1) STD25N10F7 100 V 0.035 Ω 25 A

isd 1710

Abstract: STD25NF10L
Contextual Info: STD25NF10L N-CHANNEL 100V - 0.030 Ω - 25A DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STD25NF10L • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.035 Ω 25 A TYPICAL RDS(on) = 0.030 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DEVICE

d25nf

Abstract: d25nf10l d25nf10 ST 25A 12 STD25NF10LT4 JESD97 STD25NF10L d25n
Contextual Info: STD25NF10L N-channel 100V - 0.030Ω - 25A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STD25NF10L 100V < 0.035Ω 25A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low threshold device ■ Logic level device

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

shinano stepper motor

Abstract: microstepping L6203 L298N BTB16-600CW UNIVERSAL MOTOR SPEED CONTROL CIRCUIT zoo607ma fast diode transil 247 T1635H-6T L6393 PMSM stm32 L297D
Contextual Info: Motor control Selection guide January 2009 www.st.com Contents Microcontrollers 8-bit microcontroller families 32-bit microcontroller familes Development tools 4 4 7 15 Power Power MOSFETs IGBTs IGBT modules AC switches Triacs Diacs Ultrafast rectifiers Protection devices - Transil

Contextual Info: L6480 Fully integrated microstepping motor driver with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function

AN9525

Abstract: IRFI4212 rectifier honda bridge rectifier 2A CHOOSING MOSFETS mueta AN-003 Mosfet selection SI7852 STB16NF06 AN-9525
Contextual Info: Application Note AN-002 Power MOSfet selection guidelines for class-D power amplifiers with ultra-low distortion. Selection of MOSfets using these guidelines can help the design of highly efficient full bridge class-D power amplifiers. This is achieved by carefully considering certain

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: IP67 D-SUB C o n n e c t o r s D-SUB Standard – IP67 Solder pin – Angled – .276”/7.0 mm – Precision machined contacts – Metal bracket Description RoHS compliant - CSA listed, File No.LR115000-1 UL listed, File No. E202784 Socket connector Mounting styles:

Contextual Info: IP67 D-SUB C o n n e c t o r s D-SUB Standard – IP67 Solder cup – Precision machined contacts – For hood Assembly – For wire size AWG 20 Description Suitable for wire size AWG 20 Mounting style: with through-hole, Ø .118” 3.0 mm Quality class 3 also available in quality class 1

Contextual Info: L6480 cSPIN : microstepping motor controller with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full-bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function

BS88 fuse curve

Abstract: 101D SB98107 STD20 bussmann hrc fuse bs88 33ka STD32
Contextual Info: Bussmann Industrial HRC Fuse STD 12 x 47mm, BS88, IEC 269-1 Offset Bolted Tags CURRENT RATING 16 20 25 32 10 4 6 2 Time-Current Characteristic Curve Full Size Curves Available 1,000 100 TIME IN SECONDS CATALOG SYMBOL: STD INDUSTRIAL HRC FUSE OFFSET BOLTED TAGS