STC4606 MOSFET Search Results
STC4606 MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK425G |
|
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
STC4606 MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
stc4606
Abstract: stc*4606 30V 60A power p MOSFET stc4606 MOSFET mosfet p 30v 60a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P-channel power mosfet 30V 20V 60A power p MOSFET N and P MOSFET
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STC4606 STC4606 -30V/-6 STC4606LG stc*4606 30V 60A power p MOSFET stc4606 MOSFET mosfet p 30v 60a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P-channel power mosfet 30V 20V 60A power p MOSFET N and P MOSFET | |
STC4606Contextual Info: STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance |
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STC4606 STC4606 -30V/-6 |