STB16 Search Results

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

ISD 1720

Abstract: STB160NF03L
Contextual Info: STB160NF03L N-CHANNEL 30V - 0.0021Ω - 160A D2PAK STripFET POWER MOSFET TYPE STB160NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.0030 Ω 160 A TYPICAL RDS(on) = 0.0021Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE 100% AVALANCHE TESTED

STB16NS25

Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™

STB16NF06L

Contextual Info: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)

ST160NF3LL

Abstract: STB160NF3LL ISD 1720
Contextual Info: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE

160N75F3

Abstract: STP160N75F3 JESD97 STB160N75F3 STW160N75F3 m 0409 STP160
Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

Contextual Info: STB16NB25 N - CHANNEL 250V - 0.220ft - 1 6A - TO-263 PowerMESH MOSFET TYPE V S TB16N B25 R D S o n Id < 0 .2 8 Q. 16 A dss 250 V . . TYPICAL R D S (on) = 0.220 £2 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED . EXTREMELY HIGH dv/dt CAPABILITY

p16nk60z

Abstract: p16nk60 MDmesh STB16NK60Z-S STP16NK60Z STW16NK60Z w16nk60z
Contextual Info: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH MOSFET TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.42 Ω < 0.42 Ω < 0.42 Ω

p16nk60

Abstract: p16nk60z
Contextual Info: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP16NK60Z STB16NK60Z-S STW16NK60Z 600 V

B16PF06L

Abstract: STB16PF06 STB16PF06L STB16PF06LT4
Contextual Info: STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W • ■ ■ TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE DESCRIPTION

Contextual Info: STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s)

p16nk60

Abstract: p16nk60z w16N JESD97 STB16NK60Z-S STB16NK65Z-S STP16NK60Z STP16NK65Z STW16NK60Z
Contextual Info: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP16NK60Z STB16NK60Z-S STW16NK60Z 600 V

STB16NS25

Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET • ■ ■ TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY

8A17

Abstract: MOSFET 60V 210A STB16NF06L
Contextual Info: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)

ST160NF3LL

Abstract: STB160NF3LL ISD 1720
Contextual Info: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ V DSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE

Contextual Info: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH MOSFET PRELIMINARY DATA TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.42 Ω

P16NK65Z

Abstract: JESD97 STB16NK65Z-S STP16NK65Z
Contextual Info: STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W

P16NK60Z

Abstract: p16nk60 STB16NK60Z-S STB16NK65Z-S STP16NK60Z STP16NK65Z STW16NK60Z 0728
Contextual Info: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP16NK60Z STB16NK60Z-S STW16NK60Z 600 V

Contextual Info: STB16NF06L N-channel 60V - 0.07Ω - 16A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB16NF06L 60V <0.09Ω 16A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Logic level device ■ Low threshold drive 3 1 D2PAK

Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY

Contextual Info: STB160NF3LL N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB160NF3LL 30V <0.0033Ω 160A(1) ) s ( ct 1. Value limited by wire bonding • 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device

STD16N65M5

Abstract: STB16N65M5
Contextual Info: STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 Ω, 12 A MDmesh V Power MOSFET in D²PAK, DPAK Features Type VDSS @ TJmax RDS on max. ID 710 V < 0.299 Ω 12 A STB16N65M5 STD16N65M5 3 3 1 1 • DPAK worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability

STB 523

Abstract: STB smd INDUCTOR 100K TAI-TECH
Contextual Info: All the data listed in this catalogue are for reference only,TAI-TECH reserves the right to alter or revise the specifications without prior notification. ● On-Board Type Coils / Chip Inductors SMD Type Power Inductors STB1606 Series STB Series Low DCR / Low Profile Power Inductor

STB160NF02L

Contextual Info: STB160NF02L N-CHANNEL 20V - 0.0018 Ω - 160A D2PAK STripFET POWER MOSFET TARGET DATA TYPE STB160NF02L • ■ ■ ■ ■ VDSS R DS on ID 20 V <0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE