STANFORD MICRODEVICES 4 GHZ Search Results

Contextual Info: Stanford Microdevices Product Description SMM-280-4 Stanford Microdevices' SMM-280-4 is a gallium arsenide monolithic-microwave-integrated circuit MMIC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier

SCA-14

Abstract: sca14
Contextual Info: E j Stanford Microdevices Product Description IS C A -1 4 Stanford M icrodevices’ SCA-14 is a high perform ance Galliur Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: H Stanford Microdevices Product Description SSW-508 Stanford M icrodevices’ SSW -508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable 8-pin small outline plastic package. DC-4 GHz GaAs MMIC

Contextual Info: Stanford Microdevices SSW-108 Product Description Stanford M icrodevices’ SSW -108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Isolation G a As MMIC SPDT Switch

Contextual Info: 0 Stanford Microdevices Product Description SSW-408 Stanford M icrodevices’ SSW -408 is a high performance M ESFET Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch

Contextual Info: Stanford Microdevices Product Description SSW-408 Stanford M icrodevices’ SSW -408 is a high performance M ESFET Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch

g65m

Abstract: 175C NGA-589 SCA-4 NGA589
Contextual Info: Product Description Stanford Microdevices’ SCA-4 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage

NGA-689

Abstract: SCA-12
Contextual Info: Product Description Stanford Microdevices’ SCA-12 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage

175C

Abstract: NGA-589 SCA-14 SCA-4
Contextual Info: Product Description Stanford Microdevices’ SCA-14 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage

NGA-689

Contextual Info: Product Description Stanford Microdevices’ SCA-2 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage

IC LM 8445

Abstract: LM 8445
Contextual Info: 1Stanford Microdevices Product Description SCA-4 Stanford M icrodevices’ SCA-4 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ mance up to 3 GHz. The heterojunction increases break­

marking A12

Contextual Info: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium

MMIC SWITCH 2 port 40GHz

Abstract: IS-136 SSW-408
Contextual Info: Preliminary Preliminary Preliminary Product Description Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package. SSW-408 DC-4 GHz High Power GaAs MMIC

Contextual Info: 1Stanford Microdevices Product Description SCA-4 Stanford M icrodevices’ SCA-4 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband perfor­ mance up to 3 GHz. The heterojunction increases break­

22 J1J

Contextual Info: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch

Contextual Info: IStanford Microdevices Product Description SSW-208 Stanford M icrodevices’ SSW -208 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz, High Isolation

Contextual Info: Product Description SSW-407 Stanford Microdevices’ SSW-407 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch

Contextual Info: Product Description SSW-207 Stanford Microdevices’ SSW-207 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz, High Isolation GaAs MMIC SPDT Switch

Contextual Info: IStanford Microdevices Product Description SSW-508 Stanford M icrodevices’ SSW -508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable 8-pin small outline plastic package. DC-4 GHz GaAs MMIC

Contextual Info: Product Description SSW-507 Stanford Microdevices’ SSW-507 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin miniature small outline plastic package. DC-4 GHz GaAs MMIC SPST Switch This single-pole, single-throw, non-reflective switch

SSW-108

Contextual Info: Product Description SSW-108 Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch

Contextual Info: Product Description SSW-508 Stanford Microdevices’ SSW-508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin small outline plastic package. DC-4 GHz GaAs MMIC SPST Switch This single-pole, single-throw, non-reflective switch

Contextual Info: Product Description SSW-108 Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch

Contextual Info: Product Description SSW-408 Stanford Microdevices’ SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch This single-pole, double-throw, non-reflective switch