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    ST9435 Search Results

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    Intel Corporation ENGSVHKBQUALTST943571

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    Avnet Americas ENGSVHKBQUALTST943571 1
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    Quest Components ST9435BDY-T1 1,581
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    ST9435 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


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    ST9435GP ST9435GP -30V/-10A, -30V/-5A, O-220 PDF

    st9435

    Abstract: STP9435 stp943 marking code 8P
    Contextual Info: STP9435 P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    STP9435 ST9435 -30V/-5 -30V/-4 STP9435 stp943 marking code 8P PDF

    st9435

    Abstract: ST9435A marking sop-8 MOSFET 30v sop-8 72m transistor
    Contextual Info: ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original
    ST9435A ST9435A -30V/-5 -30V/-4 st9435 marking sop-8 MOSFET 30v sop-8 72m transistor PDF

    Contextual Info: ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original
    ST9435A ST9435A -30V/-5 -30V/-4 PDF