ST93CS Search Results

Contextual Info: Æ 7 ^ 7 # S G S -T H O M S O N ST93CS46 R iflD ® © I[ L I O T ® E O D © Ì SERIAL A C C E S S C M O S 1K bit (64 x 16 EEPR O M • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

ST93CS66

Abstract: ST93CS67 st93CS66M1 but options mqs
Contextual Info: ST93CS66 ST93CS67 S G S -1 H 0 M S 0 N M [M ilLI gïï[i3©K3D(i§ SERIAL MICROWIRE BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

A10089

Abstract: ST93CS56 ST93CS57
Contextual Info: r= 7 ^ 7 # ST93CS56 ST93CS57 S G S -T H O M S O N • » M ilL Itg T ïïiS tM Q tg S SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM - 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION • SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

Contextual Info: ST93CS46 ST93CS47 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46

Contextual Info: SGS-THOMSON o m » iO T ô [ ï l S ST93CS46 SERIAL ACCESS CMOS 1K bit (64 x 16) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION * SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA ■ PAGE WRITE MODE (4 WORDS)

Contextual Info: /= T S G S -T H O M S O N ^ 7 # [* ^ S i ¥ K (Q M (g S ST93CS46 ST93CS47 SERIAL ACCESS CMOS 1K bit (64 x 16 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAM­

ST93CS46

Abstract: ST93CS47
Contextual Info: ST93CS46 ST93CS47 SERIAL MICROWIRE BUS 1K 64 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47

Contextual Info: ST93CS46 ST93CS47 SGS-THOMSON IIIIMJì ILIìMWIIÈÌ 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE

ST93CS56

Abstract: ST93CS57
Contextual Info: ST93CS56 ST93CS57 SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57

Contextual Info: ST93CS66 ST93CS67 SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4K 256 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING

Contextual Info: ST93CS56 ST93CS57 SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE

Contextual Info: r = 7 SGS-THOMSON *J M . HDWilLE üMlli!!lll gi ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K (256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

Contextual Info: fZ J * 7 /* S G S -T H O M S O N 5 [UgMDSlDlgi ST93CS57 2.5V SERIAL ACCESS CMOS 2K bit 128 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

sk 473

Abstract: 473ha 473 5.5v
Contextual Info: rZ T SGS-THOMSON ^ 7 # UÈTTMiOÈS ST93CS47 1 K BITS 64 x 16 SERIAL ACCESS CMOS EEPROM MEMORY . 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES • USER DEFINED SIZE OF A MEMORY SEC­ TION PROTECTED AGAINST WRITE. ■ WORD AND PAGE WRITE MODES. ■ HIGHLY INCREASED RELIABILITY OF CMOS

ST93CS66

Abstract: ST93CS67
Contextual Info: ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K 256 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66 – 2.5V to 5.5V for the ST93CS67

Contextual Info: ¿ = 7 ^ 7 # S C S -T H O M S O N ST93CS66 H D g ® IL i© ^ ® (Q iD (g Ì SERIAL ACCESS CMOS 4K bit (256 x 16) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

Contextual Info: / = T SCS THOMSON ST93CS56 SERIAL ACCESS CMOS 2K bit 128 x 16 EEPROM MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION SINGLE 3V TO 5.5V SUPPLY VOLTAGE USER DEFINED WRITE PROTECT AREA PAGE WRITE MODE (4 WORDS) SELF-TIMED PROGRAMMING CYCLE WITH

ST93CS66

Abstract: ST93CS67
Contextual Info: ¿ Z 7 S G S -T H O M S O N ^ 7 EfflD [f3 ô [ilLEl(gnj[S©[iiDD(g@ Mm ST93CS66 ST93CS67 SERIAL ACCESS MICROWIRE BUS 4K (256 x 16) EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING

M93S56

Abstract: ST93CS56 ST93CS57
Contextual Info: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

Contextual Info: / T T SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi ST93CS66 ST93CS67 SERIAL M IC R O W IR E BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

6AI0

Contextual Info: / T T SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi ST93CS46 ST93CS47 SERIAL M IC R O W IR E BUS 1K (64 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: SGS"THOMSON ST93CS66 ST93CS67 "*J m. IffltMilUIWMDIgS SERIAL ACCESS MICROWIRE BUS 4K 256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

ST93CS46

Abstract: ST93CS47 072D
Contextual Info: C 7 ST93CS46 ST93CS47 S G S -T H O M S O N * •7 # . SERIAL ACCESS MICROWIRE BUS 1K 64 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING ■ SINGLE SUPPLY VOLTAGE