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Contextual Info: ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	st2319srg ot-23 -40v/-3 -40v/-2	PDF
st2319 Abstract: MOSFET P channel SOT-23 P channel MOSFET 10A MOSFET P-Channel sot-23 MARKING TR SOT23-3 P MOSFET Contextual Info: ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly	Original	st2319srg ot-23 -40v/-3 -40v/-2 +5st2319 mosfet p channel sot-23 p channel mosfet 10a mosfet p-channel sot-23 marking tr sot23-3 p mosfet	PDF

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Contextual Info: ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Original

st2319srg ot-23 -40v/-3 -40v/-2

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st2319

Abstract: MOSFET P channel SOT-23 P channel MOSFET 10A MOSFET P-Channel sot-23 MARKING TR SOT23-3 P MOSFET
Contextual Info: ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Original

st2319srg ot-23 -40v/-3 -40v/-2 +5

PDF