AD5327
Abstract: ST7540 reference design HC49SR schematic design for home automation using plc UM0240 L5973d application note EVAL6207N B0603 ST7538 L5973D
Contextual Info: UM0240 User manual ST Industrial Communication Board - EVALCOMMBOARD Introduction ST Industrial Communication Board order code: EVALCOMMBOARD is a platform for Communication, Command and Control exchange with Industrial reference design boards. Its goal is to provide ST Industrial customers a reliable and easily accessible communication
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um0240ad5327st7540 reference designhc49sr+6schematic design for home automation using plcl5973d application noteeval6207nb0603st7538l5973d
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siemens simatic op17 manual
Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
Contextual Info: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation
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e86060-k6710-a101-b7-760080/ste86060-k4680-a101-b9-7600e86060-k4678-a111-b8-7600+14e86060-k2410-a111-a8-7600e86060-k8310-a101-a8-7600e86060-k6850-a101-c3p4-7600siemens simatic op17 manualsimatic field pgipc547dsiemens s7 1200 manualipc427csiwatool rs232 cableipc677csiemens a5e00mtbf siemens electric motors7-200 cpu 215
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P16NE06
Abstract: p16ne06f P16NE06FP P16NE0 STP16NE06FP STP16NE06 ISD16 NS205 P16NE
Contextual Info: STP16NE06 STP16NE06FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P16NE06 ST P16NE06FP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY
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stp16ne06stp16ne06fpp16ne06p16ne06fp+6175ocp16ne06fp16ne0isd16ns205p16ne
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P7NB40
Abstract: P7NB40FP 0118mm b 0409 h MAX728
Contextual Info: STP7NB40 STP7NB40FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST P7NB40 ST P7NB40FP • ■ ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.9 Ω < 0.9 Ω 7.0 A 4.4 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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stp7nb40stp7nb40fpp7nb40p7nb40fp+30118mmb 0409 hmax728
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P6NB50
Abstract: P6NB50FP STP6NB50 STP6NB50FP
Contextual Info: STP6NB50 STP6NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST P6NB50 ST P6NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 1.5 Ω < 1.5 Ω 5.8 A 3.4 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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stp6nb50stp6nb50fpp6nb50p6nb50fp |
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p19nb20
Abstract: P19NB20FP p19nb20 morocco p19nb2 STP19NB20 p19n p19nb l289 stp19nb20fp datasheet STP19NB20FP
Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V DSS R DS on ID ST P19NB20 ST P19NB20FP 200 V 200 V < 0.180 Ω < 0.180 Ω 19 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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stp19nb20stp19nb20fpp19nb20p19nb20fp+6p19nb20 moroccop19nb2p19np19nbl289stp19nb20fp datasheet
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P9NB60
Abstract: P9NB60FP STP9NB60 STP9NB60FP
Contextual Info: STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp9nb60stp9nb60fpo-220/to220fpp9nb60+1p9nb60fp
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P20NE06
Abstract: P20NE06FP morocco p20ne06 STP20NE06FP transistor p20ne06 P20NE06FP application p20ne STP20NE06 ITS1200 p20ne06f
Contextual Info: STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.07 Ω - 20A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P20NE06 ST P20NE06FP 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.07 Ω
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stp20ne06stp20ne06fpo-220/to-220fpp20ne06+8p20ne06fp175ocmorocco p20ne06transistor p20ne06p20ne06fp applicationp20neits1200p20ne06f
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P16NE06L
Abstract: P16NE06 p16ne0 P16NE O220-F O-220F mosfet morocco 220 NK STP16NE06L P16NF06L
Contextual Info: STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST P16NE06L ST P16NE06LFP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY
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stp16ne06lstp16ne06l/fpp16ne06lp16ne06lfp+9175ocp16ne06p16ne0p16neo220-fo-220fmosfet morocco220 nkp16nf06l
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STP45NE06ST
Abstract: P45NE06 P45NE06FP
Contextual Info: STP45NE06 STP45NE06FP N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P45NE06 ST P45NE06FP 60 V 60 V < 0.028 Ω < 0.028 Ω 45 A 25 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.022 Ω
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stp45ne06stp45ne06fpo-220/to-220fpp45ne06+2p45ne06fpstp45ne06st
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W13NB60
Abstract: h13nb60fi H13NB60 13nb60 STW13NB60 STH13NB60FI T218 sth13nb60fp BR 35 600-V H13NB60F
Contextual Info: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID ST W13NB60 ST H13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stw13nb60sth13nb60fio-247/isowatt218w13nb60+7h13nb60fih13nb6013nb60t218sth13nb60fpbr 35 600-vh13nb60f
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p5nb90
Abstract: P5NB90FP STP5NB90FP STP5NB90
Contextual Info: STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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stp5nb90stp5nb90fpo-220/to-220fpp5nb90+1p5nb90fp
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P4NB50FP
Abstract: P4NB50 SMPS SCHEMATIC DIAGRAM STP4NB50 STP4NB50FP p4nb5
Contextual Info: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE ST P4NB50 ST P4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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stp4nb50stp4nb50fpp4nb50p4nb50fp+2smps schematic diagramp4nb5
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p30ne06
Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
Contextual Info: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω
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stp30ne06stp30ne06fpo-220/to-220fpp30ne06+6p30ne06fp175ocstripfetp30ne0p30netransistor k o220
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H10NC60FI
Abstract: W10NC60 10NC60 H10NC60F P025P h10nc60 STH10NC60FI STW10NC60
Contextual Info: STW10NC60 STH10NC60FI N - CHANNEL 600V - 0.65Ω - 10A - TO-247/ISOWATT218 PowerMESH ΙΙ MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST W10NC60 ST H10NC60F I 600 V 600 V < 0.75 Ω < 0.75 Ω 10 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω
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stw10nc60sth10nc60fio-247/isowatt218w10nc60+5h10nc60fh10nc60fi10nc60p025ph10nc60
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STP55NE06
Abstract: P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP
Contextual Info: STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P55NE06 ST P55NE06FP 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY
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stp55ne06stp55ne06fpp55ne06p55ne06fp+3p55nemorocco p55ne06p55ne0
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P7NB30FP
Abstract: P7NB30 STP7NB30 STP7NB30FP
Contextual Info: STP7NB30 STP7NB30FP N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P7NB30 ST P7NB30FP • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 0.90 Ω < 0.90 Ω 7 A 4 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp7nb30stp7nb30fpo-220/to-220fpp7nb30+1p7nb30fp
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15NB50
Abstract: H15NB50FI W15NB50 H15NB50 P025P ATT218 STW15NB50 STH15NB50FI
Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID ST W15NB50 ST H15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stw15nb50sth15nb50fit0-247/isowatt218w15nb50+5h15nb50fi15nb50h15nb50p025patt218
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p6nb80
Abstract: P6NB80FP p*NB80 STP6NB80 STP6NB80FP A12540
Contextual Info: STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.9 Ω < 1.9 Ω 5.7 A 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp6nb80stp6nb80fpo-220/to-220fpp6nb80+3p6nb80fpp*nb80a12540
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P11NB40
Abstract: p11nb40f mosfet p11NB40Fp P11NB40FP p11nb4 p11nb STP11NB40 STP11NB40FP diode L2.8 STP11NB40F
Contextual Info: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P11NB40 ST P11NB40FP 400 V 400 V < 0.55 Ω < 0.55 Ω 10.7 A 6.0 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY
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stp11nb40stp11nb40fpo-220/to-220fpp11nb40+7p11nb40fpp11nb40fmosfet p11nb40fpp11nb4p11nbdiode l2.8stp11nb40f
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P5NB60
Abstract: P5NB60FP STP5NB60 STP5NB60FP
Contextual Info: STP5NB60 STP5NB60FP N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P5NB60 ST P5NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 2.0 Ω < 2.0 Ω 5 A 3 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp5nb60stp5nb60fpo-220/to-220fpp5nb60+1p5nb60fp
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p6nb90fp
Abstract: P6NB90 STP4NB90 STP6NB90FP P channel Mosfets MOSFET 900V 8A TO-220 STP6NB90 STP4NB90FP 900V2
Contextual Info: STP6NB90 STP6NB90FP N - CHANNEL 900V - 1.7Ω - 5.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P6NB90 ST P6NB90FP • ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V <2 Ω <2 Ω 5.8 A 5.8 A TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp6nb90stp6nb90fpo-220/to-220fpp6nb90+6p6nb90fpstp4nb90p channel mosfetsmosfet 900v 8a to-220stp4nb90fp900v2
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P7NB80
Abstract: P7NB80FP p*NB80 STP7NB80 STP7NB80FP STP7NB80F
Contextual Info: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P7NB80 ST P7NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.5 Ω < 1.5 Ω 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp7nb80stp7nb80fpo-220/to-220fpp7nb80+3p7nb80fpp*nb80stp7nb80f
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O220FP
Abstract: P16NB25 P16NB2 STP16NB25 STP16NB25FP
Contextual Info: STP16NB25 STP16NB25FP N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P16NB25 ST P16NB25FP 250 V 250 V < 0.28 Ω < 0.28 Ω 16 A 8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.220 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp16nb25stp16nb25fpo-220/to-220fpp16nb25+3p16nb25fpo220fpp16nb2
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