ST MICROELECTRONICS TRANSISTOR Search Results

hf2c

Abstract: TS934 m1 sot23 TS931 TS932 TS93X TSSOP14 transistor st 932
Contextual Info: Q093XC1 ST Microelectronics GRENOBLE PLANT Standard Linear ICs, DSG SHORT QUALIFICATION REPORT LINE : 093X PRODUCT NAME : TS93X LINE DESCRIPTION : MICROPOWER OPERATIONAL AMPLIFIER WAFER CODE : 093XAAH PACKAGES : TS931 : SO8 / SOT23-5 TS932 : SO8 / DIP8 TS934 : SO14 / DIP14 / TSSOP14

BV-1 501

Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
Contextual Info: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

hf2c

Abstract: m1 sot23 tssop14 TS861AI TS861I TS862AI TS862I TS864I Q086XS1 STMicroelectronics SOT23 DATE CODE
Contextual Info: Q086XS1 ST Microelectronics GRENOBLE PLANT DSG Standard Linear ICs’ LINE: 0861 / 0862 / 0864 PRODUCT NAME: TS861I / TS861AI / TS862I / TS862AI / TS864I /TS864AI LINE DESCRIPTION: Single, Dual and Quad comparator Bicmos rail-to-rail micropower WAFER CODE : C0861AAZ / C0862AAH / C0864AAH

Transistor morocco 9914

Abstract: mcr 5152 datasheet 9919c ev 2816 AE GP 531 43VB 9922g 4Mx4 dram simm CDV 495 SERVICE MANUAL md 5408
Contextual Info: STPC Industrial Programming Manual Issue 2.4 July 26, 2000 STMicroelectronics 1/531 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other

hf2c

Abstract: m1 sot23 TS1851 TS1852 TS1854 Amplifier sot23-5 14 c1852a ST microelectronic EPI WAFER
Contextual Info: Q185XS1 ST Microelectronics GRENOBLE PLANT Standard Linear ICs, DSG SHORT QUALIFICATION REPORT LINE : 185X PRODUCT NAME : TS1851/ TS1852/ TS1854 LINE DESCRIPTION : LOW POWER RAIL TO RAIL OPERATIONAL AMPLIFIER WAFER CODE : C1851AAH / C1852AAH / C1854AAH PACKAGE : SOT23-5 / SO8 & 14 / TSSOP8 & 14 / DIP8 & 14

ba 5888 fp

Abstract: md 5408 usb connector CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM Solid state CCIR ca 152 CD 5888 1412D kre 101 2065 md 5408
Contextual Info: STPC Atlas Programming Manual Issue 1.0 July 2, 2002 STMicroelectronics 1/639 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other

9918c

Abstract: mcr 5152 9928G mcr 5152 datasheet ALC 653 4Mx4 dram simm 9828a LK01 MA17 MA18
Contextual Info: STPC Industrial Programming Manual Issue 2.4 July 26, 2000 STMicroelectronics 1/531 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ZT2222A

Abstract: T2222 ST Microelectronics Transistors ZT2222 T2222A STZT2222 STZT2222A STZT2907 STZT2907A
Contextual Info: STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

ZT2907A

Abstract: T2907A st 2222A ZT2907 T2907 STZT2222 STZT2222A STZT2907 STZT2907A ST Microelectronics Transistors
Contextual Info: STZT2907 STZT2907A MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

T5400

Contextual Info: STZT5400 STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

ZT5550

Abstract: ZT5551 st 5551
Contextual Info: STZT5550 STZT5551 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

TDA7473

Abstract: VS1 servo motor
Contextual Info: TDA7473 QUAD BTL DRIVER WITH VOLTAGE REGULATOR PRODUCT PREVIEW 4 BUILT-IN POWER BRIDGES 4 x 0.6A NO EXTERNAL COMPONENTS SINGLE POWER SUPPLY WIDE SUPPLY VOLTAGE RANGE (6 TO 15V) 5V REGULATOR DRIVER FOR EXTERNAL PASS TRANSISTOR WITH FOLD-BACK SHORT CIRCUIT PROTECTION

220 NK

Abstract: ATT 47
Contextual Info: STP12NR20 STP12NR20FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE V DSS R DS o n ID ST P12NR20 ST P12NR20F I 200 V 200 V < 0.3 Ω < 0.3 Ω 12 A 7A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BULK128D-B

Abstract: BULK128D BULK128D-A
Contextual Info: BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE ORDERING CODES : BULK128D-A AND BULK128D-B NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

H5NA90FI

Abstract: W5NA90 H5NA90F h5na90 W5NA STW5NA90 STH5NA90FI
Contextual Info: STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W5NA90 ST H5NA90F I • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5.3 A 3.5 A TYPICAL RDS(on) = 2.1 Ω ± 30 V GATE-TO-SOURCE VOLTAGE

W7NA100

Abstract: h7na100fi STH7NA100FI STW7NA100 W7NA o247
Contextual Info: STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID ST W7NA100 ST H7NA100FI 1000 V 1000 V < 1.7 Ω < 1.7 Ω 7 A 4.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: di S G S -T H O M S O N RflD B»ilL[lCTK KlölE STW7N A100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss RoS(on Id STW7NA100 STH7NA100FI 1000 V 1000 V < 1 .7 0 < 1.7 n 7A 4.3 A • . . ■ . ■ TYPICAL Ros(on) = 1.45 Q ± 30V GATE TO SOURCE VOLTAGE RATING

H5NA100FI

Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
Contextual Info: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

P60N06

Abstract: P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06
Contextual Info: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P60N05-14 ST P60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

H16NA40FI

Abstract: STH16NA40FI W16NA40 h16na4 STW16NA40
Contextual Info: STW16NA40 STH16NA40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W16NA40 ST H16NA40FI 400 V 400V < 0.3 Ω < 0.3 Ω 16 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

E26NA90

Abstract: STE26NA90
Contextual Info: STE26NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E26NA90 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 0.3 Ω 26 A TYPICAL RDS(on) = 0.25 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER