ST GP 703 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4502 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) • High transition frequency fT • Large collector power dissipation PC

Contextual Info: Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios

Contextual Info: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) 5 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1215 + 2SD1360

Contextual Info: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 M Di ain sc te on na tin nc ue e/ d • Optimum for high-density mounting • Allowing supply with the radial taping

BTS 130

Abstract: bts 159 calculation of line diSTANCE relay REL 670 cq 724 g diode S78 SMD bts 2106 BTS 780 GP BTS 7710 G BTS780 GP 839 DIODE
Contextual Info: trilithic_cov.fm Seite 1 Dienstag, 30. November 1999 7:03 19 S p e c i a l S u b j e c t B o o k N o v. 1 9 9 9 T R I L I T H IC TM High Current Motor Driver M eet th e Second G en er ati o n h t t p : / / w w w. i n f i n e o n . c o m P ow e r S e m i c o nd u cto rs

2SC3932

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2

Contextual Info: Transistors 2SC3315 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios • High transition frequency fT

BFE 75A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain

Contextual Info: Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SC2636

Contextual Info: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

MOSFET TOSHIBA 2015

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step

Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 5 6 3 2 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) VCBO 30 V Collector-emitter voltage (Base open)

Contextual Info: Composite Transistors XP04683 XP4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SC4502

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4502 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in an c se ed lud

2SC1360

Abstract: 2SC1360A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1360, 2SC1360A Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 8.6±0.2 • Features

2SC4787

Contextual Info: Transistors 2SC4787 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d (0.7) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2sc2188

Contextual Info: Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 Emitter-base voltage Collector open Collector current Collector power dissipation Junction temperature Storage temperature 4.5±0.1

Contextual Info: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ d p

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10

Contextual Info: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)

10,7mhz

Abstract: 2SC2377
Contextual Info: Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit VCBO 30 V Collector-emitter voltage (Base open)

Contextual Info: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 R 0.9 R 0.7 1.0 2.0±0.2 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06