ST 8050 Search Results

diode st 4148

Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Contextual Info: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)

VP2009

Contextual Info: 10/100/1000 BASE–TX VOICEOVER IP MODULE Bothhandusa.com P/N: VP2009 DATA SHEET 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 Page : 1/1

transistor br 8050

Abstract: NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: ST 8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40

NPN transistor 8050d

Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BR 8050 D

Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

st 8050d

Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

bcm4100

Abstract: 54MHZ BCM4210 HR5770 HR6013 HR6013M Broadcom reflow
Contextual Info: HOME LAN NETWORKING BANDPASS FILTERS BOTHHAND USA 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 For use with Broadcom’s iLine 10TM chipset BCM4100 and BCM4210 Designed to withstand 235℃ peak infrared reflow temperature.

st 8050d

Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

TS6121A

Abstract: TS6121C 8050 smd 3 pin transistor TS6121F TS6121K TS6121CX TS6121B TS6121E TS6121G TS6121H
Contextual Info: BOTHHAND USA. 10/100 BASE PULSE TRANSFORMERS SMD SMALL SIZE 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 Low leakage inductance and winding capacitances for fast rise time High isolation voltages to comply with international safety requirements for LANs

st 8050

Abstract: 24HST1041A-2 GS5014 GS5009 24HST1041 24HST1041-2 24HST1041A 24HST1041-A 24HST1041B GS5008
Contextual Info: BOTHHAND USA. 1000 BASE-T MAGNETICS MODULES 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 General Specification Designed for long haul Gigabit Ethernet 1000 Base-T, Full Duplex applications Supports category 5 UTP cable Low common mode Emissions

8050 smd

Abstract: smd 8050 FS2009 FS2009A FS2009M
Contextual Info: 10 BASE-T ETHERNET SMD FILTER BOTHHAND USA 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 Designed for 10 BASE-T applications. Fully compatible with IEEE 802.3 standard. 16-PIN SMD low profile package. Storage temperature range: -40℃to +125℃.

Contextual Info: A-PDF Text Replace Purchase from www.A-PDF.com to remove the watermark Bothhand USA , DEMO: Tel:978-887-8050 462 Boston St. Topsfield, MA 01983 sales@bothhandusa.com 40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER P/N: 40SS1064A HF DATA SHEET Page : 1/2

st 8050

Abstract: 20-PIN 20PT8052 20PT8053
Contextual Info: BOTHHAND USA. 10 BASE TWO PORT PULSE TRANSFORMERS 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 20-PIN DIP package compatible with IEEE 802.3 standard for the new technology “ Filter less ” transceiver chips Designed for multipart repeater and switched Ethernet applications

8050 smd datasheet

Abstract: smd 8050 40ST6489B 40ST6489B-1 40ST6489G 40ST8050B 40ST8051B
Contextual Info: BOTHHAND USA. 10 BASE QUAD PORT PULSE TRANSFORMERS 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 40-PIN SMD package compatible with IEEE 802.3 standard & for the new technology “ Filterless ” transceiver chips Designed for multiport repeater and switched Ethernet applications

16PT8520X

Abstract: 16PT8515-4 16PT8515 16PT 16PT8510A 16PT8520 DP83840 16PT8510
Contextual Info: BOTHHAND USA. 10/100 BASE PULSE TRANSFORMERS DIP 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 Designed for 10/100 MB/s transmission over UTP-5 cable Tested and qualified for use with national semiconductor’s DP83840 Ethernet 10/100 PHY chip

NS100

Abstract: NS060 NS100 MA
Contextual Info: BOTHHAND USA. 10 BASE ISOLATION TRANSFORMERS PCMCIA 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 SMD and PCMCIA AUI isolation Modules to meet the requirements of IEEE 802.3 for 10 Base2 10 Base5 and 10 Base-t Storage temperature range: -40℃to +125℃

schema

Abstract: HR001 HR001A HR001B HR001BM HR001M HR001MM HR001R
Contextual Info: BOTHHAND USA HOME LAN NETWORKING BANDPASS FILTERS 462 Boston St - Topsfield, MA 01983 - Phone: 978-887-8050 - Fax: 978-887-5434 • Design for home LAN Networking , Phone line & Ethernet • Supports TUT system home LAN technology • Surface mountable • Integrated 10/100 Base-T transmit & receive isolation & EMI Filter