ST 25A 12 Search Results

841-P-2A-C-H

Abstract: 841-S C30048 841-P-2A E88991 song chuan 841 841-S-1A-D
Contextual Info: SONG CHUAN 841 Features ϭ Heavy duty 30A 240VAC, 25A 240VAC power type. ϭ AC & DC coils are both available. ϭ PCB terminals and quick terminal types. ϭ Optional for special large contact gap 3.0mm version. SPNO-ST & DPNO-ST contact configuration. ϭ Comply with RoHS-Directive 2002/95/EC.

25J4B41

Abstract: 25G4B41 25B4B41 TOSHIBA 25D4B41 25B4B41 TOSHIBA RECTIFIER
Contextual Info: 9 0 9 7 2 5 0 TOSHIBA < D ISCRETE/OPTO RECTIFIER S T A C K BRIDGE) TOSHIBA -CDISCRETE/0PT03- 25J4B41 600 V In DT* St,3 7 ~ TQTTHSO 0DD5B3Ô 0 25A MAXIMUM RATINGS CHARACTERISTIC 25B4B41 25D4B41 Repetitive Peak Reverse Voltage 25G4B41 25J4B 41 Ta=301C Average Output

L9801A

Abstract: L9801 motor driver full bridge 10A L603 L9222
Contextual Info: SGS-THOMSON [»œaJOTQMS L9801 HIGH SIDE DRIVER ADVANCE DATA • 25A PEAK OUTPUT CURRENT ■ R on = 10OmQ ■ DIAGNOSTIC AND PROTECTION FUNCTIONS . INRUSH CURRENT LIMITER ■ nP COM PATIBLE ■ GROUNDED CASE D E S C R IP T IO N The L9801 High Side Driver realized with ST Multi­

1RF540

Abstract: IRF540R IRF 543 MOSFET IRF540 n-channel MOSFET F542R IRF540 d2 package IP28A
Contextual Info: • M3 D2 2 7 1 0 D S 3 cn a 501 HARRIS ■ HAS IR F540/541/542/543 IRF540R/541R/542R/543R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 2 0 A B • 25A and 28A, 80V - 100V TOP VIEW • fD S °n = 0 .0 7 7 fl and 0 .1 0 fi

7652n

Abstract: 2n6766
Contextual Info: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l

D25XB60

Abstract: D25XB20 6050G
Contextual Info: Single In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S D25XBD 600V 25A ;Q 2 5 X B 6 0 ■ 3 a R A T IN G S A b s o lu te M axim um R a tin g s ~ & a is Symbol Item f^ lT f i'mL/st Storage Temperature & /j Average Rectified Forward Current -tt A, y M — v JilM^Ettft

Contextual Info: Series ST Single Output to 75A 600 Vac AC/DC Control Part Numbers Package & Chip Type ST Line Voltage1 24 48 Switch Type2 D ST 24 A ST 48 A Output Current 12 25 40 50 75 25 50 25 Options3 -02 -16 -22 FEATURES/BENEFITS • Industry standard package • Internal MOV certain models

ST24A

Contextual Info: Series ST Single Output to 75A 600 Vac AC/DC Control Part Numbers Package & Chip Type ST Line Voltage1 24 48 Switch Type2 D ST 24 A ST 48 A Output Current 12 25 40 50 75 25 50 25 Options3 -02 -16 -22 FEATURES/BENEFITS • Industry standard package • Internal MOV certain models

Contextual Info: STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE sat = 2.0 V (typ.) @ IC = 25 A

Contextual Info: International TGR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ms @ 125°C, VGe = 15V

VN5012AK-E

Abstract: CDM-AEC-Q100-011 ISO7637 JESD97 VN5012AKTR-E
Contextual Info: VN5012AK-E Single channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 36V Max on-state resistance per ch. RON 12 mΩ Current limitation (typ) ILIMH 65 A Off state supply current

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

CDM-AEC-Q100-011

Abstract: ISO7637 VN5012AK-E VN5012AKTR-E
Contextual Info: VN5012AK-E Single channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max On-State resistance per ch. RON 12 mΩ Current limitation (typ) ILIMH 65 A IS

APT34M120J

Abstract: MIC4452
Contextual Info: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT32F120J

Abstract: mosfet h bridge 25a MIC4452
Contextual Info: APT32F120J 1200V, 32A, 0.35Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

035H

Abstract: IRFPE30
Contextual Info: PD - 95646 IRG4PC40KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency

APT34M120J

Abstract: MIC4452
Contextual Info: APT34M120J 1200V, 34A, 0.30Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: International IOR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, VGE = 15V

100C

Abstract: EMP25P12B ECONOPACK
Contextual Info: Bulletin I27149 08/07 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features • • • • • • • • 1200 Volts 52 Amps 3.2 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof

VND5012AKTR-E

Abstract: ISO7637 VND5012AK-E
Contextual Info: VND5012AK-E DOUBLE CHANNEL HIGH SIDE DRIVER WITH ANALOG CURRENT SENSE FOR AUTOMOTIVE APPLICATIONS ADVANCE DATA Table 1. General Features Figure 1. Package TYPE VCC RDS on ID VND5012AK-E 41V 12mΩ (*) 40A (*) Per channel OUTPUT CURRENT: 40A 3.0V CMOS COMPATIBLE INPUT

Contextual Info: APT25GF120JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 1200V IC = 25A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT

22DGQ045

Abstract: MIL-PRF19500
Contextual Info: PD -20358E 22DGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 25A, 45V Major Ratings and Characteristics Characteristics 22DGQ045 Units IF AV 25 A VRRM (Per Leg) 45 V IFSM @ tp = 8.3ms half-sine (Per Leg) 300 A 0.76 V VF @ 25Apk, TJ =125°C (Per Leg) Description/Features

rectifier d 355 n 2000

Abstract: transistor iqr
Contextual Info: International IOR Rectifier PD - 9.1592 IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >50 kHz , and Short Circuit Rated to 10ps @ 125°C, VGe = 15V