ST 120 TRANSISTOR Search Results

Contextual Info: Ordering number: EN 5006 | Thick Film Hybrid 1C STK390-120 1-Channel + Supply Switching Convergence Correction Circuit lc max = 4A Overview Package Dimensions The ST K 390-120 is a high-accuracy convergence correction circuit hybrid IC designed to complement the

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 120

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

ic 4000

Abstract: 2SD882U-P 2SD882U
Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

Contextual Info: TEXAS INSTR -COPTO} bâ 8961726 TEXAS IN ST R DE | f l T b l ? a b 0037Dbl 62C 3 7 0 6 1 OPTO 4 D TIPL762, TIPL762A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 7"-33 - / 3 120 W at 25°C Free-Air Temperature 6 A Continuous Collector Current

2SD797Y

Abstract: 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (HZ) (A) (s) Max (Ohms) 80 80 80 80 80 80 80 80 80 80 175 175 175 175 175 175 175 175 175 200 80 200 V (BR)CEO PD (CE)sat Toper Max (°C)

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

ESM2040DV

Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50

SOT23-6L

Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
Contextual Info: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

Contextual Info: LET9120 RF power transistor the LdmoST family Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package Description The LET9120 is a common source N-channel

M252

Abstract: 865 RF transistor LET9120M
Contextual Info: LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ Internal input matching

LET9120

Contextual Info: LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package

marking 53A

Abstract: diode 53a Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet
Contextual Info: N4900 ST STN4900 Dual N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION The STN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

P1013

Abstract: MOSFET 20V 45A SC89 SC-89 MOSFET P 950 STP1013
Contextual Info: P1013 ST STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

STN4946

Contextual Info: N4946 ST STN4946 Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

ESM30450V

Abstract: MJ10100 esm40450 svt6062 2S01314 solitron transistors ia5062 PTC6002 sgs-ates transistors j200
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) Po Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (8) tf Max Toper (8) (Oe) Max Package Style NPN Darlington Transistors, (Co nt' d) 5 10 BU922 BU922P BU922P BU922P GE6252

ST 353

Abstract: sot35 marking 34a
Contextual Info: P1413A ST STP1413A P_ Channel Enhancement Mode MOSFET -3.4A DESCRIPTION The STP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

BU409D

Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

BC182

Abstract: transistor BC184 BC184 BC184 transistor transistor bc182 BC183 BC182 transistor BC182 NPN transistor datasheet BC182A BC182B
Contextual Info: ST BC182 … BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC Collector Base Voltage

bc183

Abstract: BC182 BC182 NPN transistor datasheet transistor bc182 bc184 BC184 DATASHEET BC182A BC182B BC183 transistor BC182 transistor
Contextual Info: ST BC182 … BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC Collector Base Voltage

BC182

Abstract: BC183 BC184 transistor bc182 BC182A BC182B transistor BC184 bc182 transistor BC184 transistor
Contextual Info: ST BC182 … BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC Collector Base Voltage