ST 09 61 Search Results

IRFP460

Abstract: MARKING CODE S02 81CNQ 81CNQ035A 81CNQ040A 81CNQ045A FL40
Contextual Info: Bulletin PD-20040 rev. A 09/01 81CNQ.A SERIES SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 81CNQ.A Units 80 A 35 to 45 V IFSM @ tp = 5 µs sine 4600 A VF 0.54

89CNQ150ASM

Abstract: 89CNQ 89CNQ135A 89CNQ150A 40HFL40S02 IRFP460
Contextual Info: Bulletin PD-20046 rev. C 07/02 89CNQ.A Series SCHOTTKY RECTIFIER New GenIII D-61 Package 80 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 89CNQ.A Units 80 A 135 to 150 V IFSM @ tp = 5 µs sine 4300 A VF @ 40 Apk, TJ= 125 °C

AEG PS 451

Abstract: sun hold RAS 0610 AEG PS 431 relay AEG PS 431 relay manual ras 0610 relay ras 0610 RAS 2415 SUN HOLD TSC701 ras 0610 relay PIN CONFIGURATION relay AEG PS 431
Contextual Info: TSC701 Electrical and Mechanical Specifications Preliminary – August 1996 TSC701 This design guide provides no information regarding delivery conditions and availability. Informations contained in specification charts are meant for product description but not as assured characteristics in the legal sense.

Contextual Info: SP1660/1 PLESSEY SP1600 SERIES SEMICONDUCTORS ECL III SP1660 SP1661 HIGH Z (LOWZ) DUAL4-INPUT OR/NOR GATE SP1660/61 provides sim ultaneous O R-NO R o u tp u t fun ctio n s w ith the cap a b ility o f d riving 5 0 ft lines. This P O S IT IV E LO G IC device contains an internal bias reference voltage, ensuring

Contextual Info: TE X A S IN ST R -CASIC/MEMORY} ^77 i>Ë| 6 ^ 1 7 2 5 D040774 77C 4 0 7 7 4 -§361725 TEXAS 1NSTR ASIC/MEMORY D TM4256EL9, TM4256GU9. TM4257EL9, TM4257GU9 262,144 BY 9-BIT DYNAMIC RAM MODULES SEPTEMBER 1986 - REVISED NOVEMBER 1985 T M 4 2 B .E L9 . . . L SINGLE-IN-UNE PACKAGE

Contextual Info: GEC P L E S S E Y 'SÊt JANUARY1996 SEMI CO NDUC TOR S DS4209-2.1 SV15.F FAST RECOVERY DIODE KEY PARAMETERS v RRM 1600V 205A | f AV 3000A FSM 35|iC Q r 3.2|is *n APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode. ■ Welding.

MG50H2YS1

Contextual Info: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one

Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : DATE : Mar.09.2007 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX14D12VM1CBC CONTENTS No. ITEM

infrared lamp

Abstract: pts 510 xenon lamp design EndoScope 5050 ir led PE125B-10F PE125B-10UV
Contextual Info: Imaging D A T A S H E E T Lighting Telecom Cermax Xenon Arc Lamps PE125B-10F and PE125B-10UV CERMAX® FOCUSED XENON ARC LAMPS Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in

301 marking code PNP transistor

Abstract: bc807 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 1999 May 18 Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES PINNING

AMD Athlon II X4

Abstract: ac494 gigabyte MOTHERBOARD CIRCUIT diagram TRANSISTOR AH-16 gigabyte PC MOTHERBOARD CIRCUIT diagram Athlon II X4 620 MAB01 Athlon 64 motherboard design guide computer motherboard DDR circuit diagram AMD athlon design guide
Contextual Info: Preliminary Information AMD-761 System Controller TM Data Sheet Publication # 24088 Rev: B Issue Date: August 2001 Preliminary Information 2001 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced

IRF1010

Abstract: IRG4BC30FD1 TO220AB IGBT
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

LA1851N

Abstract: CSB456F15 sf245 yt-30194 SF193 HW-6215 SA-197 TFD120
Contextual Info: O rdering num ber: E N 3 23 1C Monolithic Linear 1C LA1851N SA ßroi DTS Single-chip Tuner IC // Overview J!, Package Dim4iísÍQff^% ^ / / unit : m m The LA1851N is a luncr 1C designed For homc-usc stereo equipment w hich supports the SD system and IF counter

TSOP 86 Package

Abstract: MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422YC-12
Contextual Info: MX23L6422 3.3 Volt 64M-BIT 4M x 16 / 2M x 32 Mask ROM with Page Mode ORDER INFORMATION FEATURES • Bit organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) • Fast access time - Random access: 110ns (max.) for 3.15~3.6V 120ns (max.) for 3.0~3.6V

IRF7403

Abstract: IRF7413 IRF7603 IRF9410
Contextual Info: PD - 9.1562A IRF9410 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

40HFL40S02

Abstract: IRFP460 MBR3035WT MBR3045WT
Contextual Info: PD-2.324 rev. B 03/99 MBR3035WT MBR3045WT SCHOTTKY RECTIFIER 30 Amp TO-247AC Major Ratings and Characteristics Characteristics Description/Features MBR30.WT Units I F AV Rectangular waveform The MBR30.WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage.

pdc 140

Abstract: SAA5233 SAA5233P SAA5233T SO20L dsq8 SOT38-1
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA5233 Dual standard PDC decoder Objective specification File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Objective specification Dual standard PDC decoder SAA5233 FEATURES • Digital data slicer

working of 5 pen pc technology

Abstract: architecture of 5 pen pc technology only 5 PEN PC TECHNOLOGY 0945F
Contextual Info: Features • Utilizes the AVR RISC Architecture • AVR – High-performance and Low-power RISC Architecture • • • • • • • • – 121 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General-purpose Working Registers + Peripheral Control Registers

sharp analog tv

Abstract: 256QAM SSOP28 TDA8761 TDA8761M
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8761 9-bit analog-to-digital converter for digital video Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors 1995 Mar 20 Philips Semiconductors Preliminary specification 9-bit analog-to-digital converter for

WJ87

Contextual Info: HB56U472E-6B/7B/8B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-554 Z Preliminary Rev. 0.0 Mar. 09, 1996 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

IRF540N

Abstract: IRFP140N 4.5v to 100v input regulator
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

TDA8702

Abstract: TDA8709A TDA8709AT
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8709A Video analog input interface Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification Video analog input interface

ERC32

Abstract: sparc v7 CB123 TSC691E TSC692E TSC693E erc32 trap 361-s SPARC V7.0
Contextual Info: TSC691E Integer Unit User’s Manual for Embedded Real time 32–bit Computer ERC32 for SPACE Applications TSC691E Table of Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

IRFz48N MOSFET

Abstract: IRFP048N IRFZ48N IRFP048 IRF 024
Contextual Info: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier