SSR-10 DD Search Results

Contextual Info: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

SSR -25 DD

Contextual Info: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 5.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 500V

SSR -40 DD

Abstract: power mosfet j 162 MOSFET SSR
Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES BVDss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge _P ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ■ Lower RDS{oN) : 4.046 £2 (Typ.)

MOSFET SSR

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

DD404

Abstract: SSR SYMBOL
Contextual Info: SSR/U3055A A d van ced Power MOSFET FEATURES 60 V 0.15ß Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ V DS = 60V

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

SSR -40 DD

Contextual Info: SSR/U1N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDS= 500V

Contextual Info: SSR/Ü3055A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 6 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ Lower RDS{0N) : 0.097 £2 (Typ.)

SSR -100 DD

Contextual Info: SSR/U3055LA 60 V ^ D S o n = 0 .1 • Logic-Level Gate Drive ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|iA (M ax.) @ VDS = 60V

SSR -100 DD

Abstract: SSR -25 DD
Contextual Info: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V

Contextual Info: SSR/U3055A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 60 V ^ D S o n = 0 .1 5 ft o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (M ax.) @ V DS = 60V

Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V

on 4046

Contextual Info: Advanced SSR/U1N50A P o w e r MOSFET FEATURES BV DSS = 5 0 0 V • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 nA (M ax.) @ V DS = 500V

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

7A SF

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

7A SF

Abstract: EDD2516KCTA
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)

SSR -40 DD

Abstract: SSR -25 DD SSR -100 DD 861HSSR led 1 w 48 VDC voltage regulator SSR -60 DD
Contextual Info: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 OUTPUT CHARACTERISTICS 861HSSR*-DD 861HSSR*-AC-1

SSR -25 DD

Abstract: SSR -100 DD 48 VDC voltage regulator 861HSSR SSR -40 DD mosfet current limiter E317746
Contextual Info: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 Output Characteristics 861HSSR*-DD 861HSSR*-AC-1

Contextual Info: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection

ac to dc to ac voltage regulator

Abstract: schneider overload relay WIRING DIAGRAM ac to ac regulator ul 924 relay ac current regulator AC 2500 ac to dc regulator
Contextual Info: S t a t e R e la y 861 Solid State Relay GENERAL SPECIFICATIONS OUTPUT CHARACTERISTICS UNIT 861SSR210-DC-1 861SSR210-AC-1 861SSRA208-DC-1 861SSRA208-AC-1 861SSR115-DD 861SSR208-DD SPST-NO SCR 2 10 24….280 AC Zero Cross SPST-NO SCR (2) 10 24….280 AC Zero Cross

ECC89

Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
Contextual Info: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C