SSR-10 DD Search Results

Contextual Info: SSR/U3055A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.15 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

SSR -100 DD

Abstract: SSR -25 DD
Contextual Info: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V

Contextual Info: SSR/U3055A FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 60 V ^ D S o n = 0 .1 5 ft o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (M ax.) @ V DS = 60V

Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V

vde 0110

Contextual Info: M&CNECRAFT ELECTRIC CO SflE D S7D71G1 0DG3bS7 210 WM HGF SSR CLASS 6 D C IN P U T DC O UTPUT H IG H R E L IA B IL IT Y T Y P E 3 .5 -3 2 V D C IN P U T Transformer-Isolated. ,170 Dia. 4.4 2 Pis 10-32 Thd. 2 Pis. 1.70 (43.2) 2.25 (57.2) t - T 0.78 0.87 (1 9 8 ) ( 2 2 . 2 )

SSR -40 DD

Abstract: SSR -25 DD SSR -100 DD 861HSSR led 1 w 48 VDC voltage regulator SSR -60 DD
Contextual Info: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 OUTPUT CHARACTERISTICS 861HSSR*-DD 861HSSR*-AC-1

ac to dc to ac voltage regulator

Abstract: schneider overload relay WIRING DIAGRAM ac to ac regulator ul 924 relay ac current regulator AC 2500 ac to dc regulator
Contextual Info: S t a t e R e la y 861 Solid State Relay GENERAL SPECIFICATIONS OUTPUT CHARACTERISTICS UNIT 861SSR210-DC-1 861SSR210-AC-1 861SSRA208-DC-1 861SSRA208-AC-1 861SSR115-DD 861SSR208-DD SPST-NO SCR 2 10 24….280 AC Zero Cross SPST-NO SCR (2) 10 24….280 AC Zero Cross

ECC89

Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
Contextual Info: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C

Application Note 60

Abstract: spice model TRIAC OUTPUT OPTOCOUPLER phototransistor spice model phototriac Spice sSR spice model spice model solid state relay IN5235 mosfet dc switch arcing spice model exercise "P-Channel JFET"
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers Application Note 60 SSR Design Using VO1263 INTRODUCTION A solid state relay SSR is a semiconductor device that can be used in place of a mechanical relay in many applications to switch electricity to a load. SSRs are purely electronic and

XC5VLX50-FF676

Abstract: ramb16bwer SPARTAN 3an spartan 3a vhdl code for 9 bit parity generator DS512 4VLX60 EE core SPARTAN 3an power of 2 vhdl code for 8 bit parity generator
Contextual Info: Block Memory Generator v2.6 DS512 October 10, 2007 Product Specification Introduction LogiCORE IP Facts The Xilinx LogiCORE IP Block Memory Generator core is an advanced memory constructor that generates area and performance-optimized memories using embedded block RAM resources in Xilinx FPGAs.

LH1514

Abstract: solid-state DRIVE ACCESS CONTROL
Contextual Info: A T & T Mi''.EC I C L4E D • 005002b 000^050 b2b MA TT E! Preliminary Data Sheet = ' = ? Microelectronics LH1514 — 2 Form A, High-Frequency Solid-State Relay Features Parameter Load Voltage Load Current Typical R on Description LH1514 15 150 5 Units

Contextual Info: Ramp/Soak Temperature/ Process Controller with Fuzzy Logic Model CN3251-R $ 410 Shown ߜ Dual PID + Fuzzy Logic Control ߜ Up to Five Outputs– Control, Alarm or Event ߜ Universal Sensor Input ߜ Switching Power Supply 100 to240 Vac or Optional 12 to 24 Vac/Vdc

IN5235B

Abstract: solid state relay spice model VO1263 sSR spice model spice model solid state relay phototriac Spice spice model TRIAC OUTPUT OPTOCOUPLER arcing spice model J177 equivalent 1N5235B spice model
Contextual Info: Vishay Semiconductors SSR Design Using VO1263 Introduction Solid State Relay SSR is a semiconductor device that can be used in place of mechanical relay to switch electricity to a load in many applications. SSRs are purely electronic and normally composed of a low

Contextual Info: Advanced SSR/U1N60A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V B Low Rds(0n) ■ 9-390 £1 (Typ.)

ASX 12 D transistor

Abstract: Grayhill 70s2-04-c-03-v transistor dtx 360 mosfet transistor dtx 360 mosfet dtx 360 S505-0SJ625-000 GORDOS SOLID STATE RELAY gordos relay all mosfet dtx 360 ssr grayhill
Contextual Info: Your Contact for Relays SECTION SOLID STATE RELAYS SSR 2.5 TO 125 AMPERES 2 SOLID STATE RELAYS 6 (ASX) SSRDIN 6 (DSX) RELAY SERIES L.E.D. STATUS LAMP FEATURES L W H 2.25 x 1.75 x 0.78 L W H 4.015 x 1.180 x 4.527 AC & DC INPUT AC INPUT L W H 2.25 x 1.75 x 0.78

NBS125

Abstract: C2057C BS4937 591-253 digital code lock circuit using 4017
Contextual Info: 1 -DIN, 81 -DIN & 16 -DIN TEMPERATURE CONTROLLERS 1 4 Product Manual 59125-3 PREFACE This manual comprises two volumes: Volume 1: This supports normal operation of the 41-DIN, 18-DIN and 161 -DIN Temperature Controllers. In normal operation, all actions taken

Contextual Info: SSR/U3055LA Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance o ■ ^ D S o n = II Avalanche Rugged Technology ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■ Lower RDS(ON) : 00 ■ 0.1

4 change over relay 24v omron

Abstract: RELAY 12V FUJI 5v 24v relay DC 5V relay 220v ac RELAY 24V FUJI RS16E-DE04 relay rb105 Fuji PLC RS16-DE04 RS910B1-0304
Contextual Info: Industrial Control Relays Relays–and–terminal module RS type Relays-and-terminal module RS4„, 6N • A very compact, space-saving terminal module containing four or six relays with one NO contact. • Features • The RS series relays-and-terminal module consists of four or six plug-in

PM0063

Abstract: digital code lock circuit using 4017
Contextual Info: -DIN & 81 -DIN RaPID TEMPERATURE CONTROLLERS 1 4 Product Manual 59131-2 June 1999 How to use this manual PM-0063 1 4 -DIN & 18 -DIN RaPID TEMPERATURE CONTROLLERS PRODUCT MANUAL VOLUME I OPERATING INSTRUCTIONS In normal operation, the operator must not remove the Controller from its housing

29c818

Abstract: AN29C
Contextual Info: Am29C818A Advanced Micro Devices CMOS Pipeline Register with SSR Diagnostics DISTINCTIVE CHARACTERISTICS • ■ High-speed noninvertirg 8-bit parallel register for any data path o r pipelining application ■ WCS W ritable Control store pipeline register

09323

Abstract: AM29C818A CD3024 PD3024
Contextual Info: A m 2 9 C 8 1 8 A CMOS Pipeline Register with SSR Diagnostics Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ High-speed noninverting 8-bit parallel register for any data path or pipelining application WCS Writable Control Store pipeline register

Contextual Info: SSR/U4N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V

SSR -100 DD

Contextual Info: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V