SSM3K3 Search Results

Contextual Info: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)

SSM3K320T

Contextual Info: SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 0.4±0.1

SSM3K318T

Contextual Info: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

SSM3K316T

Contextual Info: SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications • • Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V)

SSM3K36FS

Contextual Info: SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω max (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V)

SSM3K38MFV

Contextual Info: SSM3K38MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K38MFV ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2±0.05 1 2 0.32±0.05 0.4 0.8±0.05 0.4 0.8±0.05 0.22±0.05 1.2V drive Low ON-resistance : Ron = 20 Ω max (@VGS = 1.2 V)

SSM3K303T

Contextual Info: SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm Ron = 120 mΩ max (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SSM3K35CT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K35CT ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 1.2 V 駆動です。 • オン抵抗が低い : Ron = 20 Ω 最大 (@VGS = 1.2 V)

Contextual Info: SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω max (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V)

SSM3K302T

Abstract: PD1700
Contextual Info: SSM3K302T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K302T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 131mΩ 最大 (@VGS = 1.8V)

SSM3K310T

Contextual Info: SSM3K310T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K310T ○ 高速スイッチング • 1.5V 駆動です • オン抵抗が低い : Ron = 66mΩ 最大 (@VGS = 1.5V) 単位: mm +0.2 2.8-0.3 : Ron = 43mΩ (最大) (@VGS = 1.8V)

Contextual Info: SSM3K37CT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K37CT ○ 高速スイッチング用 ○ アナログスイッチ用 • 1.5V 駆動です • オン抵抗が低い。 単位: mm RDS ON = 5.60 Ω (最大) (@VGS = 1.5 V)

SSM3K302T

Contextual Info: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications Unit: mm • • 1.8 V drive • Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)

Contextual Info: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 m max (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V)

Contextual Info: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)

Contextual Info: SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications • • 1.5 V drive Low ON-resistance: Unit: mm Ron = 66 m Ron = 43 m Ron = 32 m Ron = 28 m max (@VGS = 1.5 V) (max) (@VGS = 1.8 V) (max) (@VGS = 2.5 V)

Contextual Info: SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 20 Unit: mm max (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4

Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R Power Management Switch Applications High-Speed Switching Applications Unit: mm +0.08 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) 0.05

Contextual Info: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R Power Management Switch Applications High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)

Contextual Info: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS SSM3K318T Load Switching Applications High-Speed Switching Applications • • Unit: mm 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)

Contextual Info: SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU High-Speed Switching Applications Unit: mm • Low ON-resistance: Ron = 1.52 Ω max (@VGS = 1.5 V) 2.1±0.1 : Ron = 1.14 Ω (max) (@VGS = 1.8 V) 1.7±0.1 : Ron = 0.85 Ω (max) (@VGS = 2.5 V)

SSM3K301T

Contextual Info: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)

Contextual Info: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)