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    SSH8N70 Search Results

    SSH8N70 Functional Equivalents (2)

    The Functional Equivalents tab will give you options that are likely to match the same function of SSH8N70, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    SSH10N70 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 10A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    FS10SM-14A Mitsubishi Electric Check for Price Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    SSH8N70 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSH6N80

    Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
    Contextual Info: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65


    OCR Scan     		SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 SSH4N80 SSH5N80 SSH6N80 SSH8N80 SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 PDF

    SSH8N80

    Abstract: SSH8N70 "VDSS 800V" 40A mosfet
    Contextual Info: N-CHANNEL POWER MOSFETS SSH8N80/70 FEATURES • Lower R d s <o n • improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSH8N80/70 SSH8N80 SSH8N70 7Tb414B "VDSS 800V" 40A mosfet PDF