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    SSH3N90 Datasheets Context Search

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    5B2 rectifier

    Contextual Info: N-CHANNEL POWER MOSFETS SSH3N90 FEATURES • L o w e r R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		ssh3n905b2 rectifier PDF

    SSH6N80

    Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
    Contextual Info: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65


    OCR Scan     		ssh4n70ssh5n70ssh6n70ssh8n70+11ssh10n70ssh12n70ssh4n80ssh5n80ssh6n80ssh8n80ssh3n90ssh12n80ssh7n90ssh11n90ssh-6n80 PDF

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Contextual Info: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		mtm8n55o-204aa/to-3mtm8n60mtm8n40+13o-262/i-2ssi2n60bssi4n60bssh6n80ptc6063 equivalentmtw15n25espa08n80c3nte2393nte99se7055mtp4n90sk3024se5020 PDF