SSG TRANSISTOR Search Results

FPD2250DFN

Abstract: FPD2250SOT89 MIL-HDBK-263
Contextual Info: FPD2250DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 16.5 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD1500

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35
Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

high power transistor s-parameters

Contextual Info: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)

FPD1500SOT89

Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD6836

Abstract: FPD6836SOT343 FPD750SOT343 MIL-HDBK-263 pHEMT transistor 360 Filtronic* FPD6836
Contextual Info: PRELIMINARY FPD6836SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 0.5 dB Noise Figure ♦ 20 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG) ♦ 32 dBm Output IP3 ♦ Evaluation Boards Available • DESCRIPTION AND APPLICATIONS

transistor BC 568

Abstract: transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325
Contextual Info: FPD3000SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant

MARKING SSG SOT23

Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
Contextual Info: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information

FPD750DFN

Abstract: FPD750SOT89 MIL-HDBK-263
Contextual Info: FPD750DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 24 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG) ♦ 0.3 dB Noise Figure at 25% Bias ♦ 39 dBm Output IP3 at 50% Bias ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available

FPD1500DFN

Abstract: FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Featuring Lead Free Finish Package

FPD2250

Abstract: FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 Filtronic Components
Contextual Info: FPD2250SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 14 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD2250SOT89E

FPD750SOT343

Abstract: FPD750 FPD750SOT343E MIL-HDBK-263
Contextual Info: FPD750SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 0.3 dB Noise Figure at 25% Bias ♦ 20 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 38 dBm Output IP3 at 50% Bias ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD750SOT343E

FPD750

Abstract: FPD750SOT89 FPD750SOT89E MIL-HDBK-263 0.15 um pHEMT transistor
Contextual Info: FPD750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 25 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 0.6 dB Noise Figure ♦ 39 dBm Output IP3 ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD750SOT89E

FPD3000

Abstract: FPD3000SOT89 FPD3000SOT89E MIL-HDBK-263 0J-60
Contextual Info: FPD3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

FPD1500DFN

Abstract: FPD750DFN FPD750SOT89
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

fpd750sot89e

Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122
Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Contextual Info: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

transistor bc 647

Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Transistor AC 51 0865 75 834

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

9-GHz

Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

Transistor AC 51 0865 75 730

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm