Mosfet
Abstract: SSF11NS65 diode 945
Contextual Info: SSF11NS65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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Mosfet
Abstract: SSF11NS65F
Contextual Info: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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Mosfet
Abstract: SSF11NS65U
Contextual Info: SSF11NS65U 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.32Ω (typ.) ID 11A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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Mosfet
Abstract: SSF11NS70UF
Contextual Info: SSF11NS70UF 700V N-Channel MOSFET Main Product Characteristics VDSS 700V RDS on 0.45Ω (typ.) ID 11A Marking and Pin TO220F Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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Mosfet
Abstract: SSF1116A
Contextual Info: SSF1116A 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology Avalanche energy, 100% test Fully characterized avalanche voltage and current BV=110V Rdson=12mΩ Typ. DESCRIPTION The SSF1116A is a new generation of high voltage and low
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Mosfet
Abstract: SSF1116
Contextual Info: SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current BV=110V Rdson=12mΩ Typ. DESCRIPTION The SSF1116 is a new generation of high voltage and low
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Mosfet
Abstract: SSF1122
Contextual Info: SSF1122 110V N-Channel MOSFET FEATURES ID =60A Advanced trench process technology Ultra low RDS ON High avalanche energy, 100% test Fully characterized avalanche voltage and current BV=110V RDS(ON)=20mΩ（Typ） DESCRIPTION The SSF1122 is a new generation of middle voltage and high
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Mosfet
Abstract: SSF11NS60D
Contextual Info: SSF11NS60D 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.36Ω (typ.) ID 11A TO-252 Marking and Pin Assignment Schematic Diagram Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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Mosfet
Abstract: SSF1109
Contextual Info: SSF1109 110V Channel MOSFET Main Product Characteristics VDSS 110V RDS on 6.7mohm(typ.) ID 130A TO220 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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Mosfet
Abstract: SSF11NS60
Contextual Info: SSF11NS60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.36Ω (typ.) ID 11A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
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1n40011n40070v-1000v1n5391+141n53991n54001n5408s6a05ic 78057812 voltage regulator 5aregulator ic 7805regulator ic 78241n10016a smd transistorregulator ic 79057824 5aregulator ic 78127812 7912
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SSF14
Abstract: SSF11 SHER601 SHER602 SHER603 SHER605 SSF12 SSF13 ssf24 SSF-13
Contextual Info: SINO— AMERICAN SILICON 54E ZD • fl2fll74b 0000026 S ■ H IG H E F F IC IE N C Y R E C T IF IE R S 'T - 0 3 - 1 7 OPERATING AND STORAGE TEMPERATURE -6 5 ° C to +175°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load
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a2fll74bt-03-17sher601sher602+10sher60320tingfast/do-41ssf11ssf12ssf13ssf14sher605ssf24ssf-13
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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sc70-6ot-23fdr8321lfdr8521l+13fdfs2p106afdfs2p103fdfs2p102ssp6n60airf650irf540 mosfet with maximum vds 12vssp2n60bsss7n60bssr2955irfs630assp4n60asss3n90airf634a
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HBL57484IV
Abstract: GF15G HBL24GBA512GY legrand 037 01 legrand 037 05
Contextual Info: Hubbell Wiring Systems Delivery Systems Product Guide Table Of Contents Hubbell Raceway Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page 1 Hubbell’s innovative Raceway Systems include a choice of steel, aluminum and non-metallic, single
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hbl750hbl4750h5233r08hbl57484iv+4gf15ghbl24gba512gylegrand 037 01legrand 037 05
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BTA136
Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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05nh4505nh4605nu4105nu42+160r8gu415ka105ka10a5ka115ka11a5ka12bta136ft0818mwsm4007 panjitby288ft2516nhfs0802nhft0817mhft1208mwft0618mhequivalent components of diode her207
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