SSD2013 Search Results

Contextual Info: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSD2104

Abstract: SSD2108 SSD2101 SSD2013 SSD2003 6250
Contextual Info: FUNCTION GUIDE MOSFETs 8 SOIC SINGLE FET N/P-CHANNEL Part Number B V d s s (V) lo(on)(A) Ftos(on)(a) FWja(K/W) PD(Watt) Page SSD2101|N-CH) 30 7.00 0.030 62.50 2 917 N EW SSD2102(P-CH) -20 -5.30 0.060 62.50 2 922 NEW Package Remark SSD2104{P-CH| -30 -4.60