SSD2013 Search Results

SSD2013 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	SSD2013 Cto150â	PDF
SSD2104 Abstract: SSD2108 SSD2101 SSD2013 SSD2003 6250 Contextual Info: FUNCTION GUIDE MOSFETs 8 SOIC SINGLE FET N/P-CHANNEL Part Number B V d s s (V) lo(on)(A) Ftos(on)(a) FWja(K/W) PD(Watt) Page SSD2101\|N-CH) 30 7.00 0.030 62.50 2 917 N EW SSD2102(P-CH) -20 -5.30 0.060 62.50 2 922 NEW Package Remark SSD2104{P-CH\| -30 -4.60	OCR Scan	SSD2101 SSD2102 SSD2104 SSD2106 SSD2108 SSD2002 SSD2003 SSD2004 SS02005 SS02007 SSD2013 SSD2003 6250	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

OCR Scan

SSD2013 Cto150â

PDF

SSD2104

Abstract: SSD2108 SSD2101 SSD2013 SSD2003 6250
Contextual Info: FUNCTION GUIDE MOSFETs 8 SOIC SINGLE FET N/P-CHANNEL Part Number B V d s s (V) lo(on)(A) Ftos(on)(a) FWja(K/W) PD(Watt) Page SSD2101|N-CH) 30 7.00 0.030 62.50 2 917 N EW SSD2102(P-CH) -20 -5.30 0.060 62.50 2 922 NEW Package Remark SSD2104{P-CH| -30 -4.60

OCR Scan

SSD2101 SSD2102 SSD2104 SSD2106 SSD2108 SSD2002 SSD2003 SSD2004 SS02005 SS02007 SSD2013 SSD2003 6250

PDF