SS26 Search Results

SS24

Abstract: SS22 SS23 SS25 SS26 S4 DO-214AA marking ss24 SS24 VISHAY
Contextual Info: SS22 thru SS26 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifiers DO-214AA SMB Reverse Voltage 20 to 60V Forward Current 2.0A Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.085 MAX

SS26

Abstract: SS34 DO-214AA
Contextual Info: SS22 thru SS26 Surface Mount Schottky Rectifiers Reverse Voltage 20 to 60V Forward Current 2.0A DO-214AA SMB Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.106 MAX (2.69 MAX) Dimensions in inches and (millimeters)

SS26A

Abstract: 202E SS22A SS23A SS24A SS25A
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. SS22A THRU SS26A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 20 TO 60V CURRENT: 2.0A FEATURES SMA/DO-214AC • Ideal for surface mount pick and place application • Low profile package • Low power loss, high efficiency

193ie7

Abstract: SS22 SS23 SS24 SS25 SS26
Contextual Info: SS22 THRU SS26 3X Voltage Range 20 to 60 Volts Current 2.0 Amperes 2.0 AMP. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SMB/DO-214AA Features .082 2.08 .076(1.93) • For surface mounted application n • Metal to silicon rectifier,majority carrier conduction

toshiba diode 1A

Abstract: 1SS268 Toshiba MRI 1SS26
Contextual Info: SS268 TOSHIBA 1 SS268 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

S4 SMB

Contextual Info: SS22 thru SS26 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 20 V to 60 V IFSM 75 A VF 0.50 V, 0.70 V Tj max. 125 °C, 150 °C DO-214AA (SMB) Features Mechanical Data • • • •

ss24

Contextual Info: SS22 thru SS26 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: New Product SS25S, SS26S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

SS26V

Contextual Info: コモンモード SSコイル SS26Vタイプ ［RoHS指令適合］ ［RoHS指令適合］ SS Coils SS26V Type ＜特長＞ ●小型大インダクタンス設計により、SS28Vタイプ、SS24Vタイプへの置き換えが可能。 ●SS28Vタイプ比では体積は約22％減、

Contextual Info: Common mode SS Coils SS26V Type [RoHS [RoHS Compliant] Compliant] <Features> ･ ･ ･ ･ High inductance yet compact design enables replacement for SS28V-type and SS24V-type Approx. 22% reduced volume and covers approx. 70 to 100% inductance compared with SS28V- type.

SS26

Abstract: SS26 SMB
Contextual Info: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

1SS269

Contextual Info: SS269 TO SH IBA 1 SS269 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS + 0.5 2.5 -0 .3 + 0.2 5 1.5 - 0 .1 5 FEATURES : • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.6n (Typ.)

Contextual Info: Generator set data sheet Model: Frequency: Fuel type: C16 D6 X-series 60 Hz Diesel Spec sheet: SS26-CPGK Noise data sheet (open/enclosed): ND60-OS550/ND60-CS550 Airflow data sheet: AF60-550 Derate data sheet (open/enclosed): DD60-OS550/DD60-CS550 Transient data sheet:

SS24A

Abstract: SS26A JY diode SS22A SS23A SS25A
Contextual Info: SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SS22A – SS26A Surface Mount Schottky Barrier Rectifier Features • Low Profile in SMA Package • Low power loss, high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-0

194L

Abstract: general semiconductor s6 marking SS24 s6 general semiconductor s4 schottky "general semiconductor" general instrument S4
Contextual Info: SS22 THRU SS26 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current -2 .0 Amperes FEATURES DO-214AA ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications

SS24 DIODE schottky

Abstract: 202E SS22 SS23 SS24 SS25 SS26
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. SS22 THRU SS26 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 20 TO 60V CURRENT: 2.0A FEATURES SMB/DO-214AA • Ideal for surface mount pick and place application • Low profile package • Low power loss, high efficiency

DO-214AA, S6

Abstract: SS24 marking SS24 SS22 SS23 SS25 SS26
Contextual Info: SS22 THRU SS26 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts FEATURES DO-214AA 0.086 2.20 ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications ♦ Low profile package

Contextual Info: SS22 thru SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: SS22 thru SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS268 TOSHIBA 1 SS268 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER B A N D SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Crp = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SS269 T O SH IB A 1 SS269 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : CT = 1.2pF Max. • Low Series Resistance : rs = 0.6n (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SS22 thru SS26 Vishay Semiconductors formerly General Semiconductor Surface Mount Schottky Rectifiers DO-214AA SMB Reverse Voltage 20 to 60V Forward Current 2.0A Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.085 MAX

Contextual Info: New Product SS25S & SS26S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop