SS 8554 Search Results

Contextual Info: INTERNATIONAL RECTIFIER <*855452 SS INTERNATIONAL d ËT| MÛ554S2 ODOSOSS R EC TIFIER 55C 05055 D Data Sheet No. PD-2.047B INTERNATIONAL R E C T IF IE R I R / - 3 - / “ 7 SOSO SERIES 8 Am p Schottky Power Rectifiers Description/Features Major Ratings and Characteristics

Contextual Info: INTERNATIONAL RECTIFIER SS DE I MÖ55452 GDGSIEB 55C 05 123 'V855452 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.055A r-oy- ^ INTERNATIONAL RECTIFIER IOR BQHQ SERIES 6 0 Amp, 100V Schottky Power Rectifers I j i i

Contextual Info: INTERNATIONAL RECTIFIER SS î Êr| 4ÖS5I45E GD0SD17 Data Sheet No. PD-2.058B 55C 05097 4855452 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R r- i 3-0 f 40CDQ & GQCDQ SERIES AND SDS41 40 and 60 Amp Dual Schottky Center Tap Rectifiers Description/Features

2025 ct

Abstract: n5204 T30 rectifier 2N5204 2N681 T120 16A CK801 2N6204 2N682 LT 5226
Contextual Info: international SS rectifier '4855452 INTERNATIONAL RECTIF IE R ]M f|4 ÔS54S2 00047^5 4 550 04795 Data Sheet No. PD-3.081A 1 INTERNATIONAL RECTIFIER r ~ /s-' IÖR SN681 & SN5S04 SERIES 25 and 3 5 Amp RMS SCRs Major Ratings and Characteristics 2N681-92 2N5204-Q7

SST6908

Abstract: SST6910 pa104
Contextual Info: SILICONIX INC IflE D • 8554735 QOlBlbl k ■ SST6908 SERIES H ÌS S 5& " \ N-Channel JFET Circuits The SST6908 Series is much more than a JFET. The addition of back-to-back diodes effectively clamps input "over-voltage” while a highperformance JFET provides an effective amplifica­

Contextual Info: 6 5 I 2 3 .470 , l00+:$' P.C.B. MOUNTING PATTERNS VIEW FROM COMPONENT SIDE SCALE NOTES; C 1- JACK FOR MATING WITH SHIELDED PLUG (MOLEX 95043 SERIES 2- PRODUCT SPECIFICATION : PS-85543-001 3- APPLICATION SPECIFICATION :A S - 9 5 0 0 I 4- PACKAGING SPECIFICATION; SEE CHART

ss 8554

Contextual Info: L X 8554 5 A Extremely Lo w D ropout P ositive A djustable R egulator I HE I n f i n i t e P o w e r OF P R E L I M I N A R Y I n n o v a t i o n DESCRIPTION T h e LX855-4 is a very low d ropout three term inal adju stable regulator with a m inim um o f 5A output current.

Intronic

Contextual Info: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag

25275

Contextual Info: TE X A S IN S T R { L I N / I N T F O T s D Ê| 0033=127 TELECOM CIRCUITS r 3 T-75-11-37 TCM2101/2 PCM REPEATER DECEMBER 1982 Features GND M • • • • • • • PCM Signal amplification Two ALBO taps High Q or Low Q clock extraction Decision time adjustment

Contextual Info: SPECIFICATION CONTROL DRAWING 1. MATING INTERFACE DIMENSIONS PER M IL -C -3 9 0 1 2 /T N C SERIES AND DYNAWAVE M D -8 5 KTNC, 18GHz . 2. ELECTRICAL DC TO 1.05 + .04 dB 50 250 100 dB - 6 5 °c 750 FREQUENCY RANGE G H z -VSWR (M A X ) * -INSERTION LOSS (dB M A X )-NOMINAL IMPEDANCE (OHMS)-VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB DOW N)-TEMPERATURE RATING (DEGREES CENTIGRADE) —

ALLIANCE SEMICONDUCTOR

Abstract: AS80M2185
Contextual Info: Product Proposal Alliance Semiconductor AS80M2185 EMI Reduction IC FEATURES • 2 spread % selections: - 1.25% and – 3.75% Provides up to 15 dB EMI reduction • 3.3V operating voltage • Generates a 1X low EMI spread spectrum clock from the input frequency

PK95

Contextual Info: 10 0.76 TYP. '.030 8.89 ±0.05 .350 ±.002 TYP. 0 .1 0 / .0 0 4 Y 1.27 .050 6.35 ±0.08 .250 ±.003 H 0.10/.004|x| RECOMMENDED F 15.15 ±0.08 .596 ±.003 6.54 ±0.08 .257 ±.003 2.54 +0.25 11.94 100 +,0”'0 •1üü-.ooo 3.60 +0.25 ,+.010 -.000 RECOMMENDED

Contextual Info: CIRCUIT ASSEMBLY CORP IbE D Solder C u p -M etal Shell • 51337SÖ DOOlbiS 5 m ^ Backshells-Straight& Angled Exit PVC u u "T INSERT * I Irl Irl H h Irl h H I ■ Benefits/Features U.L. recognized/C.S.A. certified Sizes available - 9,15,25, 37, and 50 position

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . BY W O O COPYRIGHT 4 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 REVISIONS - - R E S ER V ED . G P LTR D E S C R IP TIO N R1 BODY D DATE REV PER ECR 0 8 - 0 0 1 3 3 7 16JAN08 DWN APVD JR TM D

Contextual Info: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V

stk 412 -410

Abstract: stk 5315 STK 419 150 IRF CANAL P stk 412 -420 STK 412 150 equivalent stk 412 750 LTM 4620 component data D965 equivalent
Contextual Info: Microprocessor Assembly Language Programming Manual National Semiconductor Publication Number 4200130A Order Number IPC-16S/969Y January 1977 PACE Processing And Control Element Assembly Language Programming Manual National Semiconductor Corporation 2900 Semiconductor Drive

mpx2100ap altimeter

Abstract: FE202 AN1552 MC68HC11/mpx2100ap altimeter MPX7000 Digital Pressure Gauge circuit diagram HC11 MC33272 MC78L08ACP MPX2000
Contextual Info: MOTOROLA Order this document by AN1552/D SEMICONDUCTOR APPLICATION NOTE MPX7100AP: The Sensor at the Heart of Solid-State Altimeter Applications AN1552 By Chris Winkler and Jeff Baum Sensor Systems Engineering Group Motorola Semiconductor Products Sector Phoenix, Arizona

Contextual Info: S4E I CIRCUIT ASSEMBLY CORP • 213375A OGÜ17flfl 2T7 « C A C A -& -0 5 -CPU. ORIENTATION DIP SOCKET OPEN FRAME [ 2.54 ] .177 .197 Features Open frame construction with precision turned screw machine contacts Closed bottom for 100% protection of contact

g 9084

Abstract: bav 24 diode BAV 303
Contextual Info: BAV300.BAV303 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic se a led parts • Fits onto S O D 323 / S O T 23 footprints • Electrical data identical with the B A V 100.B AV103 / BAV 200.B AV203 devices Applications

Contextual Info: HB56D836IB Series 8,388,608-W ord x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D836IB is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS) sealed in SOJ package. An outline of the HB56D836IB is

VP0610, sot23

Abstract: marking HSs SOT23 TO206AC VP0610T
Contextual Info: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25

Contextual Info: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case: QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg

BAV203-GS08

Contextual Info: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case:QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options:

Contextual Info: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg Cathode Band Color: Black Packaging Codes/Options: