SS 24 DIODE SMD Search Results

Transistor smd 338

Abstract: TQ2S-24 TQ2S-L2-24 double coil latching relays smd TQ2SA-12V TQ2S-48 TQ2S-L2-12
Contextual Info: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V

SMD15N

Contextual Info: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05

SMD10P06L

Abstract: B060C SMD10P
Contextual Info: T e m ic siiiconix_ SMD10P06L P-Channel Enhancement-Mode Ttansistor 175 °C Maximum Junction Temperature Product Summary VDs V rDS(on) (Q) 0.28 @ VGS = -1 0 V 0.35 @ VGS = -4.5 V -60 IDa (A) -1 0 -7.5 DPAK (T O -252) D EFÜ G S Top View

TQ2SA-12V

Abstract: DIODE SMD L26 TQ2SA-3V TQ2SA-L-12V smd diode L29 smd transistor mark D10 smd diode L23
Contextual Info: TQ SMD LOW-PROFILE SURFACE-MOUNT RELAY 14 .551 TQ SMD RELAYS FEATURES 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V

TQ2SA-12V

Abstract: TQ2SA-L-12V DIODE SMD L26 smd transistor 079 smd transistor L45 smd diode L23
Contextual Info: TQ SMD TESTING TQ SMD RELAYS LOW-PROFILE SURFACE-MOUNT RELAY FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V

SMU30N03-30L

Abstract: q3020 smu30n03 SMD30N03-30L
Contextual Info: Tem ic SMD/SMU30N03-30L S em i co n d u c t or s N-Channel Enhancement-Mode Transistors, Logic Level Product Summary VDS V IDa (A) r DS(on) ( ^ ) 0.030 30 30 TO-251 TO-252 D P o o H r Drain Connected to Tab G D S Top View Ô G D S Top View Order Number:

Contextual Info: TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ-SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch in height comforming to EIA standards Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style

TQ2S-12

Abstract: 5v relay 8 pin 30v dc 125v ac TQ-SMD 5 pin 12v relay connection smd transistor 079 TQ2SA-12V
Contextual Info: TQ SMD LOW-PROFILE SURFACE-MOUNT RELAY 14 .551 TQ SMD RELAYS FEATURES 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V

nais relay

Abstract: NAIS TQ2SA-L2 TQ-SMD NAIS Relay s2 12v TQ2SA-5V TQ2SA-12V TQ2SA-L-12V TQ2SA-L2-12V relay 5v 5pin Transistor smd 338
Contextual Info: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch RoHS Directive compatibility information http://www.nais-e.com/ • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style

tq2sa

Abstract: TQ2SA-5V TQ-SMD TQ2SA-L-12V Transistor smd 338 TQ2SA-12V TQ2SA-L2-12V of 5pin 12v relay smd transistor 079 Ss 24 DIODE SMD
Contextual Info: TQ SMD LOW-PROFILE SURFACE-MOUNT RELAY 14 .551 TQ SMD RELAYS FEATURES 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V

TQ2SA-12V

Abstract: smd ss 5 transistor TQ2SA-5V Transistor smd 338 5 V DC RELAY TQ2SA-3V TQ-SMD TQ2SA-L2-12V relay 5 pin TQ2SA-L-12V
Contextual Info: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V

Contextual Info: SPP 46N03 Infineon technologias SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.015 n A 46 b V 30 • d v/df rated

Contextual Info: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

Contextual Info: Tem ic SMD10P06 Semiconductors P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V ) rDS(on) (£2) IDa (A ) -6 0 0.28 @ V Gs = 10 V ±10 c m £(«•* S Q TO-252 o n □ it Drain Connected to Tab G D S Top View 6 D Order Number: SMD10P06 P-Channel MOSFET

SMD15N05

Abstract: SMU15N05
Contextual Info: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:

smd rgs

Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
Contextual Info: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter

Contextual Info: PD - 94600 IRF5NJZ34 55V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ34 55V 0.04Ω 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF (10A) 55V

Abstract: IRF5NJZ34
Contextual Info: PD - 94600 IRF5NJZ34 55V, N-CHANNEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ34 55V 0.04Ω 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

marking diode SCHOTTKY SOD123 SMD

Abstract: resistor 4k7 capacitor 100N NCP1034D NCP1034 SMD Transistor SS s X22 ZENER smd transistor marking zt ceramic capacitor 100n JESD78
Contextual Info: NCP1034 100V Synchronous PWM Buck Controller Description The NCP1034 is a high voltage PWM controller designed for high performance synchronous Buck DC/DC applications with input voltages up to 100 V. The NCP1034 drives a pair of external N−MOSFETs. The switching frequency is programmable from

SMD Transistor SS s

Abstract: NCP1034 2FP0 X22 ZENER R11E capacitor 100N 63V 2u2
Contextual Info: NCP1034 100V Synchronous PWM Buck Controller Description The NCP1034 is a high voltage PWM controller designed for high performance synchronous Buck DC/DC applications with input voltages up to 100 V. The NCP1034 drives a pair of external N−MOSFETs. The switching frequency is programmable from

1N4148 sod123 DIODE

Abstract: ncp1034 ncp1034smd 1n4148 smd diode IN SOD123 PACKAGE NCP1034D
Contextual Info: NCP1034 100V Synchronous PWM Buck Controller Description The NCP1034 is a high voltage PWM controller designed for high performance synchronous Buck DC/DC applications with input voltages up to 100 V. The NCP1034 drives a pair of external N−MOSFETs. The switching frequency is programmable from

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^D S o n Package Ordering Code BUZ 20 100 V 13.5 A 0.2 n TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Values Symbol Continuous drain current Unit A b 13.5

Contextual Info: T e m ic SMD15N06 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) 60 0.10 lDa (A) 15 D Q DPAK (T O -252) D •<-¿3 n°n G S Ô s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)