SRAM126 Search Results

P4C1023L

Abstract: P4C1023
Contextual Info: P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 400 or 600 mil Ceramic DIP —32-Pin Ceramic SOJ

Contextual Info: P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 400 or 600 mil Ceramic DIP —32-Pin Ceramic SOJ

Contextual Info: FT61023 L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 400 or 600 mil Ceramic DIP —32-Pin Ceramic SOJ

Memory

Abstract: FT61023L
Contextual Info: FT61023/FT61023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/70 ns Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O