SRAM SHEET SAMSUNG Search Results

SRAM sheet samsung

Abstract: K6R4016VIC ISAS512K16LTD 256K Synchronous DRAM samsung
Contextual Info: Data Sheet Part No. ISAS512K16LTD Irvine Sensors Corporation Microelectronics Products Division 8Mbit 512K x 16 SRAM Memory Stack Features: q q Low Profile: same PCB footprint as a

uPD44165182AF5-E50-EQ2-A

Abstract: uPD44165182AF5-E40-EQ2 upd44165362a
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082A, 44165092A, 44165182A, 44165362A 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082A is a 2,097,152-word by 8-bit, the µPD44165092A is a 2,097,152-word by 9-bit, the µPD44165182A

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084A, 44165094A, 44165184A, 44165364A 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084A is a 2,097,152-word by 8-bit, the µPD44165094A is a 2,097,152-word by 9-bit, the µPD44165184A

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44645082 is a 8,388,608-word by 8-bit, the µPD44645092 is a 8,388,608-word by 9-bit, the µPD44645182 is a

UPD443

Abstract: UPD44325362F5-E50-EQ2
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44325082, 44325092, 44325182, 44325362 36M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44325082 is a 4,194,304-word by 8-bit, the µPD44325092 is a 4,194,304-word by 9-bit, the µPD44325182 is a

Contextual Info: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: KM64V1003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

K6E0808C1C

Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
Contextual Info: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

UPD4464

Abstract: d1110
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44645084, 44645094, 44645184, 44645364 72M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44645084 is a 8,388,608-word by 8-bit, the µPD44645094 is a 8,388,608-word by 9-bit, the µPD44645184 is a

Contextual Info: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

Contextual Info: CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

UPD443

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44325084, 44325094, 44325184, 44325364 36M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44325084 is a 4,194,304-word by 8-bit, the µPD44325094 is a 4,194,304-word by 9-bit, the µPD44325184 is a

Contextual Info: PRELIMINARY K6R1004V1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Revision History Rev . No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0 Release to Preliminary Data Sheet.

K6R1004C1A

Abstract: K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A-20
Contextual Info: PRELIMINARY K6R1004C1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995 Preliminary Rev. 1.0 Release to final Data Sheet.

KM64V1003C-12

Abstract: KM64V1003C-15 KM64V1003C-20
Contextual Info: KM64V1003C CMOS SRAM Document Title 256Kx4 Bit with OE High Speed CMOS Static RAM(3.3V Operating) Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet 1. Delete Preliminary 2. Relex DC characteristics

zo 107 MA

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44645082 is a 8,388,608-word by 8-bit, the μPD44645092 is a 8,388,608-word by 9-bit, the μPD44645182 is a

K6E0804C1C-C

Abstract: SRAM sheet samsung
Contextual Info: PRELIMINARY CMOS SRAM K6E0804C1C-C Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

KM68V257C

Abstract: KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CTG
Contextual Info: PRELIMINARY CMOS SRAM KM68V257C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645084, 44645094, 44645184, 44645364 72M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44645084 is a 8,388,608-word by 8-bit, the μPD44645094 is a 8,388,608-word by 9-bit, the μPD44645184 is a

Contextual Info: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092, 44646182, 44646362, 44646093, 44646183, 44646363 72M-BIT DDR II+ SRAM 2.0 & 2.5 Cycle Read Latency 2-WORD BURST OPERATION Description The μPD44646092 and μPD44646093 are 8,388,608-word by 9-bit, the μPD44646182 and μPD44646183 are

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366 72M-BIT QDRTM II+ SRAM 2.0 & 2.5 Cycle Read Latency 4-WORD BURST OPERATION Description The μPD44647094 and μPD44647096 are 8,388,608-word by 9-bit, the μPD44647184 and μPD44647186 are

Contextual Info: KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998

uPD44165084

Abstract: 9p marking
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364