SRAM FLATPACK Search Results

AS5C512K8

Abstract: SMD MARKING CODE 12L
Contextual Info: SRAM SRAM SRAM AS5C512K8 AS5C512K8 Austin Semiconductor, Inc. AS5C512K8 Austin Semiconductor, Inc. 512K ASSIGNMENT 512K xx 88 SRAM SRAM PINPIN ASSIGNMENT PIN ASSIGNMENT 512K x 8 SRAM Top View HIGH SPEED SRAM with HIGH SPEED SRAM with HIGH SPEED SRAM with

89C1632

Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

89C1632

Abstract: 512K x 8 bit sram 32 pin
Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

89C1632

Abstract: SRAM 6264 6264 SRAM
Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

1753i

Abstract: Q68-04
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16 MEGABIT 512K X 32-BIT MCM SRAM SPACE PRODUCTS 89C1632RP 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE SEi 89C1632RP Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory

Q68-04

Abstract: 89C1632RP-25
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16 MEGABIT 512K X 32-BIT MCM SRAM SPACE PRODUCTS 89C1632RP 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE SEi 89C1632RP Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory

SRAM 6264

Abstract: all data sheet 89LV1632
Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: SRAM AS8S128K32 128K x 32 SRAM GENERAL 21, 28, 39 are no connects PN 66 DESCRIPTION Lead PGA- Pins 8, SRAM MEMORY ARRAY The AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

UT8ER2M32

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 8, 2009 FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M

SRAM edac

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

Contextual Info: Standard Products UT8ER1M39 40Megabit SRAM MCM UT8ER2M39 80Megabit SRAM MCM UT8ER4M39 160Megabit SRAM MCM Advanced Data Sheet December 19, 2008 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 1M, 2M, or 4M x

AZ 280 chip

Contextual Info: Integrated Device Technology, Inc. 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: PRELIMINARY IDT71V532 The IDT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 7, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8R2M39

Abstract: UT8R4M39 UT8R1M39
Contextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Data Sheet January 2013 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M, or 4M x

Contextual Info: 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER Integrated D evice Technology, Inc. FEATURES: PRELIMINARY IDT71V532 The 1DT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

Contextual Info: 64K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER Integrated Device Technology, Inc. FEATURES: PRELIMINARY IDT71V632 The ID T71V632 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

zo 107

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8ER2M32

Abstract: UT8ER4M32 UT8ER1M32 SRAM edac
Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 2, 2010 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M