SRAM 2K X 8 Search Results

sram

Abstract: sram datasheet FT6116 cmos sram S-RAM sram 2k x 8
Contextual Info: FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 FT6116 2K X 8 CMOS SRAM FT6116 120 FT6116 150 FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 120 2 FT6116 150(2) FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116

96182

Abstract: 9715 cy7c136
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97045/97154 VERSION 1.1 April, 1997 Dual Port SRAM - R28 Technology CY7C130/131 1K x 8 Dual Port SRAM CY7C140/141 1K x 8 Dual Port SRAM CY7C132/136 2K x 8 Dual Port SRAM CY7C142/146 2K x 8 Dual Port SRAM Cypress Semiconductor

MT5C1608

Contextual Info: M IC R O N 2K SRAM MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible

sram 2k x 8

Contextual Info: MICRON TECHNOLOGY INC SSE ]> b lllS M T D003440 b4S M IC R O N 2K SRAM IMRN MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE and OE options

MT5C1608

Contextual Info: MICRON SEMICONDU CTOR INC M I C R O N I , L.7E D , • blllSMS 000^330 2bb ■ MRN w SRAM 2K 2K X MT5C1608 X 8 SRAM 8 SRAM • H igh speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-perform ance, low-power, CM OS double-m etal process • Single +5V +10% pow er supply

CY7C136

Abstract: ablestik 84-1LMISR4 Nitto MP 8000
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98482 VERSION 1.0 March, 1999 5V Asynchronous Dual Port SRAM - R28 Technology - Fab 2 CY7C130/131/140/141 1K x 8 Dual Port SRAM CY7C132/136/142/146 2K x 8 Dual Port SRAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

52002HR

Abstract: 52002I IN3064 2k x 8 nvram
Contextual Info: 52002 2K BIT 256 x 8 NVRAM 2K Bit Static RAM backed by 2K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Faiiure Protection Unlimited Recall Cycles Memory Margining Capability

ms6116

Abstract: F0059 F0228 PAL20S10 MS29673 F0062 "32K x 8" SRAM dil F0057 128K X 8 BIT CMOS SRAM 6 pin DIL And Gate
Contextual Info: MICROTECH SEMICONDUCTORS 4SE D | • MICS MICROTECH r-­ BS9000 Approved product list Memory Part N9 Package style BS Spec. N2 Functional Description MS6116-2 24 PIN DIL BS9400 G0085 2k x 8 SRAM MS29653 18 PIN DIL BS9400 G0112 2k x 4 Power Switched PROM

CY7C136

Contextual Info: HD32/42 ADP SRAM I o 5 Volt x8 Asynchronous Dual-Port Static RAM Memory Configuration Mode Device 2K x 8 Master HD32L 2K x 8 Slave HD42L Key Features: • • • • • • • • • • • Industry leading asynchronous Dual-Port Static RAM up to 15ns

Contextual Info: VITELIC V61C3S FAMILY HIGH PERFORMANCE LOW POWER 2 K x 8 DkJAL PORT MEMORY Features Description • 2K x 8 bit C M O S Static RAM with 3-state outputs The Vitelic V61C35 is a CMOS 2K x 8 low-cost dual port SRAM that eliminates on-chip arbitration to fit applications where timing or design makes arbitration

SOP24

Abstract: PDIP28 U631H16 a9235
Contextual Info: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

M48Z02

Abstract: M48Z12 MK48Z02
Contextual Info: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT

PCDIP24

Abstract: DS1220 M48Z02 M48Z12 M48Z02 Zeropower
Contextual Info: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

PDIP24

Abstract: U635H16 A-9215
Contextual Info: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

PDIP24

Abstract: U635H16 ZMD AG
Contextual Info: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in

Contextual Info: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in

PCDIP24

Abstract: M48Z02 Zeropower DS1220 M48Z02 M48Z12
Contextual Info: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

all stk ic diagram

Abstract: stk all ic data
Contextual Info: U630H16PA35 HardStore 2K x 8 nvSRAM Features Description ‡ The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to

Contextual Info: HD121/125 ADP SRAM I o 5 Volt x8 Asynchronous Dual-Port Static RAM Memory Configuration Mode Device 2K x 9 Master HD121L 2K x 9 Slave HD125L Key Features: • • • • • • • • • • • Industry leading asynchronous Dual-Port Static RAM up to 15ns

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;

B8432

Abstract: sram 2k x 8 MB8432
Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;

Contextual Info: U635H16 PowerStore 2K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in

Contextual Info: U630H16P HardStore 2K x 8 nvSRAM Features Description ! High-performance CMOS nonvo- The U630H16P has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

Contextual Info: U63716 CapStore 2K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U63716 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in