SR2 330 1 Search Results

002WA

Abstract: GR-253-CORE I-64 STM-64 i642 mitsubishi optical transmitter photodiode mitsubishi receiver
Contextual Info: MITSUBISHI TE9-01-142C 1 / 31 Nov. 2001. Preliminary Data Sheet Approved Charged MITSUBISHI OPTICAL DEVICES MF-10KMXF-xxxxx MF-10KMXG-xxxxx MF-10KMXH-xxxxx Signature by Customer SONET / SDH Transceiver Module with MUX/DEMUX OC-192 / STM-64 Transponder

103AT

Abstract: bq2016 bq2016DBQ bq2016DBQR BZX84C5V6 MMBT3904
Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

103AT

Abstract: bq2016 bq2016DBQ bq2016DBQR BZX84C5V6 MMBT3904
Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475 – JANUARY 2001 D D D D D D D D Provides Accurate Measurement of Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for Easy Pack Integration

94766

Abstract: Diode SV-02 SR2T MOC3023SR2M MOC3023VM MOC302XM MOC3023V-M MOC3023SM MOC3021SM diode sv 0390
Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

h11n1 "cross-reference"

Abstract: H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

1800-mAh

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

PI5002D

Abstract: contact image sensor 1200dpi 1200DPI AMIS-722402 2400DPI 1200 dpi cis sensor line scan sensor schematic photo sensor 600DPI contact image sensor 2400dpi
Contextual Info: AMIS-722402: Contact Image Sensor Data Sheet 1.0 General Description AMI Semiconductor’s AMIS-722402 PI5002D contact image sensor (CIS) consists of 1376 active pixels which enables the selection of 2400, 1200, 600, or 300 dots per inch (dpi) resolutions, and employs AMI Semiconductor’s proprietary CMOS image sensing

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

PD78C10A

Abstract: 78C11 PD78c10AGQ PD78C11A PA78CP14GQ PA-78CP14GQ 78c10 R2M 45 ZC2C 87AD
Contextual Info: 8 t* 7 !• ‘ ì / ' s ' f — ? A / D 3 4 - ? /4 ' O //PD78CllA(A iil6tf>y hALU , ROM, RAM , A / D ^ V ^ - ^ , 'J 7 ^ " f £ 1 ^-y-70^ S I I L , è ) 2 hÌ W i h •# ? >J (ROM /RAM ) ^tÈSS’C è -&CMOS 8 t*7 b • - W ^ n 3 >•b°^- —^ T '’t 'o//PD78C10A(A) ¡¿/¿PD78C11A(A) ^ i>ROM$‘|^t’>t f pHn t',

MOC3083SR2M

Abstract: MOC3081FM MOC3081M
Contextual Info: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic

HSR412

Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

SR-6N3-4

Abstract: transistor 5-1147 5-1147 6N3 t SR-6N-4 diode SR 360 E-15331 1184 Heyco 1154 Heyco HEYCO
Contextual Info: Heyco Products, Inc. “The First Name in Wire Protection” Heyco Straight-Thru Strain Relief Bushings For Round Cables • Standardize panel design! Fill unneeded SR mounting holes with Heyco Double “D” Plugs, page 2-21. • Sizes SR2 to SR6 for mounting hole

WIRING diagram USB to rca CABLE

Abstract: RFU-531 ldf4-50a belden nokia 1280 circuit diagram free L1PNM-H taiko relay Intercomp 1-4082x RFB-1135-T radiall 617 320 Solitron product catalog
Contextual Info: RF Connectors Division of of RF RF Industries Industries AA Division 1-800-233-1728 CD Available on 7610 Miramar Road, San Diego, CA 92126-4202 • 858 549-6340 • (800) 233-1728 Fax (858) 549-6345 • email: rfi@rfindustries.com • website: rfindustries.com

.05 uf 400 volt capacitor

Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

MOC3022M

Abstract: MOC3021-M MOC301X MOC3023V-M MOC3020M triac 250 volt 20 a MOC3021M MOC3023M MOC3012-M ac motor speed triac control circuit
Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

MOC306X

Abstract: OPTOCOUPLER trigger thyristor scr thyristor firing control circuit with optocoupler moc3061 application note MOC316X MOC3162-M mercury wetted relay MOC3062M
Contextual Info: ZERO-CROSS PHOTOTRIAC OPTOCOUPLER MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT TRIAC SUBSTRATE 6 1 DESCRIPTION The MOC306X and MOC316X devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector

MOC3022M

Abstract: MOC301X
Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

MOC301X

Abstract: MOC3022M MOC3021M MOC3020M 0.05 uF capacitor
Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

GRM55DR61H106KA88L

Abstract: MW7IC2040NBR1 atc100b6r8ct500xt MW7IC2040N A114 A115 AN1977 AN1987 JESD22 TO272WB-16
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage