SR2 330 1 Search Results

94766

Abstract: Diode SV-02 SR2T MOC3023SR2M MOC3023VM MOC302XM MOC3023V-M MOC3023SM MOC3021SM diode sv 0390
Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

h11n1 "cross-reference"

Abstract: H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.

1800-mAh

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

PI5002D

Abstract: contact image sensor 1200dpi 1200DPI AMIS-722402 2400DPI 1200 dpi cis sensor line scan sensor schematic photo sensor 600DPI contact image sensor 2400dpi
Contextual Info: AMIS-722402: Contact Image Sensor Data Sheet 1.0 General Description AMI Semiconductor’s AMIS-722402 PI5002D contact image sensor (CIS) consists of 1376 active pixels which enables the selection of 2400, 1200, 600, or 300 dots per inch (dpi) resolutions, and employs AMI Semiconductor’s proprietary CMOS image sensing

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

Contextual Info: bq2016 GAS GAUGE IC FOR HIGH DISCHARGE RATES SLUS475A – JANUARY 2001 – REVISED NOVEMBER 2002 D Provides Accurate Measurement of D D D D D D D TSSOP PACKAGE TOP VIEW Available Capacity in Nicd or NiMH Batteries Measures a Wide Dynamic-Current Range Requires ≤ 1 Square Inch of PCB Space for

MOC3083SR2M

Abstract: MOC3081FM MOC3081M
Contextual Info: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic

HSR412

Contextual Info: PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS HSR312 HSR312L HSR412 HSR412L DESCRIPTION The HSR312 and HSR412 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven by a photovoltaic generator. The devices are

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

SR-6N3-4

Abstract: transistor 5-1147 5-1147 6N3 t SR-6N-4 diode SR 360 E-15331 1184 Heyco 1154 Heyco HEYCO
Contextual Info: Heyco Products, Inc. “The First Name in Wire Protection” Heyco Straight-Thru Strain Relief Bushings For Round Cables • Standardize panel design! Fill unneeded SR mounting holes with Heyco Double “D” Plugs, page 2-21. • Sizes SR2 to SR6 for mounting hole

.05 uf 400 volt capacitor

Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

MOC301X

Abstract: MOC3022M MOC3021M MOC3020M 0.05 uF capacitor
Contextual Info: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M PACKAGE MOC3023M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 4 MAIN TERM. 1 *DO NOT CONNECT (TRIAC SUBSTRATE)

GRM55DR61H106KA88L

Abstract: MW7IC2040NBR1 atc100b6r8ct500xt MW7IC2040N A114 A115 AN1977 AN1987 JESD22 TO272WB-16
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all

"Schmitt Trigger" h11n1

Abstract: H11N1 H11N1-M H11N1VM H11N2 H11N2-M H11N3 H11N3-M H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC 6 VCC ANODE 1 6 6 CATHODE 2 5 GND 1 1 4 VO 3 6 1 DESCRIPTION Truth Table The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a

H11N1

Abstract: H11N1-M H11N1VM H11N2 H11N2-M H11N3 H11N3-M H11N1M
Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC 6 VCC ANODE 1 6 6 CATHODE 2 5 GND 1 1 4 VO 3 6 1 DESCRIPTION Truth Table The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a

addressing modes in adsp-21xx

Abstract: adsp 218x user manual P219X direct addressing mode in adsp-21xx VisualDSP 3.5 Assembler and Preprocessor Manual introduction de ADSP-219x Assembler Manual for ADSP-218x ADSP-219x addressing modes of adsp 21xx processors ADSP-219X
Contextual Info: 3 DIFFERENCES BETWEEN RELEASES Figure 3-0. Table 3-0. Listing 3-0. Much of the code handling in VisualDSP Release 7.0 is compatible with DSP Development Tools Release 6.1. Migration porting existing source programs to the new environment involves minimal user effort.

RF toy plane circuit diagram

Abstract: A7101 schematic current limiter 48 vdc 4A 14 pin proportional rc toy receiver CON16 SR10 SR12 SR13 SR14 SR15
Contextual Info: A7101 Preliminary 2.4GHz FSK Transceiver Document Title 2.4GHz FSK Transceiver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue August 2, 2002 Preliminary 0.1 Modify current consumption, Tx output power, sensitivity, October 16, 2002 RSSI range, frequency deviation, data rate, SPI interface,

MOC3081M

Contextual Info: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic

application notes MOC3062

Abstract: inverse-parallel scr drive circuit moc3061 application note moc3063 application note MOC3061-63 MOC3062M 4n25 application note zero crossing pulse MOC3061 optocoupler MOC 4N35 moc3063sm
Contextual Info: MOC3061 MOC3062 MOC3063 GlobalOptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 600 Volts Peak The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors

triac driver application note

Abstract: Triac motor speed control ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT MOC3081M
Contextual Info: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic

TRIAC FT 12

Abstract: MOC3081M SCR TRIGGER PULSE circuit 1N4001 FKPF12N80 MOC3082 MOC3082M MOC3083M MOC3083VM MOC3083-M
Contextual Info: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic