SR 160 DIODE Search Results

tsha5503

Abstract: TSHA5502 diode SR 09 TSHA 5502 TSHA5203 TSHA550 TSHA5500 TSHA5501
Contextual Info: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm

TSHA6503

Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
Contextual Info: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

LN9705

Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

TSHA5500

Contextual Info: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

GMO06983

Abstract: Q62702-P5053
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

Contextual Info: 2014-01-16 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.1 SFH 4860 Features: Besondere Merkmale: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Matches all Si-Photodetectors

TSUS5400

Abstract: TSUS5402 TSUS5401 TSUS-5402
Contextual Info: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm

Contextual Info: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity

VSLB3940

Abstract: VISHAY VSLB3940 DATASHEET
Contextual Info: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity

LED905_35_22

Contextual Info: High Speed Infrared Emitting Diode, 905 nm, GaAlAs Double Hetero Features • High modulation bandwidth 10 MHz • • • • • • • • • • Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation

GMO06983

Abstract: OHLY0598
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

GMO06983

Abstract: OHLY0598
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

Contextual Info: TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off

VSMB3940X01

Abstract: VSMB3940 VSMB3940X01-GS08 6-541 VSMB3940X01-GS18
Contextual Info: VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

VEMT20

Contextual Info: VSMB2000X01, VSMB2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, RoHS Compliant, 940 nm, GaAlAs, DDH, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: GW, RGW VSMB2020 VSMB2000 • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8

Contextual Info: VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs Double Hetero, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Product designed and qualified acc. AEC-Q101

vsmb2020x01

Abstract: VSMB2000X01 VEMD2000X01 VSMB2000 VSMB2020 IPC 7351
Contextual Info: VSMB2000X01, VSMB2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH FEATURES VSMB2000X01 • • • • • • • • • • • • • • • Package type: surface mount Package form: GW, RGW Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8

Contextual Info: VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs Double Hetero, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Product designed and qualified acc. AEC-Q101

Contextual Info: VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

1n5819 trr

Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
Contextual Info: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop

diode Sr 26

Contextual Info: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMG2720 is an infrared, 830 nm emitting diode in GaAlAs

Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm