SR 160 DIODE Search Results

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

tsha5503

Abstract: TSHA5502 diode SR 09 TSHA 5502 TSHA5203 TSHA550 TSHA5500 TSHA5501
Contextual Info: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm

TSHA6503

Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
Contextual Info: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability

Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

LN9705

Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1

B029A

Abstract: UN039
Contextual Info: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

FF100R12MT4

Contextual Info: Technische Information / technical information FF100R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

TSHA5500

Contextual Info: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm

GMO06983

Abstract: Q62702-P5053 marking code diode 04 to-18
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 1 0.9 .1 (2.7) 4.05 3.45 Flat glass cap ø2.54 5.5 5.2 fmo06983 Cathode 1.1 .9 ø4.8 ø4.6 2.54 mm spacing ø0.45 14.5 12.5 GMO06983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GMO06983

Abstract: Q62702-P5053
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

Contextual Info: 2014-01-16 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.1 SFH 4860 Features: Besondere Merkmale: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Matches all Si-Photodetectors

TSUS5400

Abstract: TSUS5401 TSUS TSUS5402 TSUS-5402
Contextual Info: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.

Contextual Info: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity

VSLB3940

Abstract: VISHAY VSLB3940 DATASHEET
Contextual Info: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity

LED905_35_22

Contextual Info: High Speed Infrared Emitting Diode, 905 nm, GaAlAs Double Hetero Features • High modulation bandwidth 10 MHz • • • • • • • • • • Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation

GMO06983

Abstract: OHLY0598
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

GMO06983

Abstract: OHLY0598
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

GMOY6983

Abstract: Q62702-P5053
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

PR002-2

Abstract: mru2 PR0022
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)